| High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ... Applied physics letters 75 (14), 2073-2075, 1999 | 297 | 1999 |
| Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law N Stojanovic, DHS Maithripala, JM Berg, M Holtz Physical Review B—Condensed Matter and Materials Physics 82 (7), 075418, 2010 | 294 | 2010 |
| Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates Y Zhao, J Hwan Lee, Y Zhu, M Nazari, C Chen, H Wang, A Bernussi, ... Journal of Applied Physics 111 (5), 2012 | 241 | 2012 |
| Structural and optical properties of carbondoped AlN substrates grown by hydride vapor phase epitaxy using AlN substrates prepared by physical vapor transport T Prokofyeva, M Seon, J Vanbuskirk, M Holtz Phys. Rev. B 63, 125313, 2001 | 190 | 2001 |
| Enhanced signal-to-background ratios in voltammetric measurements made at diamond thin-film electrochemical interfaces JW Strojek, MC Granger, GM Swain, T Dallas, MW Holtz Analytical chemistry 68 (13), 2031-2037, 1996 | 176 | 1996 |
| Raman spectroscopy of carbon materials JR Dennison, M Holtz, G Swain Spectroscopy 11 (8), 1996 | 170 | 1996 |
| Tunable dual-band terahertz metamaterial bandpass filters Y Zhu, S Vegesna, Y Zhao, V Kuryatkov, M Holtz, Z Fan, M Saed, ... Optics letters 38 (14), 2382-2384, 2013 | 144 | 2013 |
| Visible and ultraviolet Raman scattering studies of alloys M Holtz, WM Duncan, S Zollner, R Liu Journal of Applied Physics 88 (5), 2523-2528, 2000 | 133 | 2000 |
| Raman studies of nitrogen incorporation in T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu, S Nikishin, H Temkin Applied physics letters 73 (10), 1409-1411, 1998 | 133 | 1998 |
| Microfabrication and characterization of Teflon AF-coated liquid core waveguide channels in silicon A Datta, IY Eom, A Dhar, P Kuban, R Manor, I Ahmad, S Gangopadhyay, ... IEEE Sensors Journal 3 (6), 788-795, 2003 | 132 | 2003 |
| Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on and 6H–SiC substrates I Ahmad, M Holtz, NN Faleev, H Temkin Journal of applied physics 95 (4), 1692-1697, 2004 | 130 | 2004 |
| Influence of defects on structural and electrical properties of VO2 thin films C Chen, Y Zhao, X Pan, V Kuryatkov, A Bernussi, M Holtz, Z Fan Journal of Applied Physics 110 (2), 2011 | 119 | 2011 |
| Effect of substrate orientation on terahertz optical transmission through VO2 thin films and application to functional antireflection coatings Y Zhu, Y Zhao, M Holtz, Z Fan, AA Bernussi JOSA B 29 (9), 2373-2378, 2012 | 118 | 2012 |
| Vibrational properties of AlN grown on (111)-oriented silicon T Prokofyeva, M Seon, J Vanbuskirk, M Holtz Phys. Rev. B 63, 125313, 2001 | 118 | 2001 |
| Si-doped AlxGa1− xN (0.56⩽×⩽ 1) layers grown by molecular beam epitaxy with ammonia B Borisov, V Kuryatkov, Y Kudryavtsev, R Asomoza, S Nikishin, DY Song, ... Applied physics letters 87 (13), 2005 | 117 | 2005 |
| A two-stage discrete peristaltic micropump JM Berg, R Anderson, M Anaya, B Lahlouh, M Holtz, T Dallas Sensors and Actuators A: Physical 104 (1), 6-10, 2003 | 111 | 2003 |
| AlN/AlGaInN superlattice light-emitting diodes at 280 nm G Kipshidze, V Kuryatkov, K Zhu, B Borisov, M Holtz, S Nikishin, H Temkin Journal of applied physics 93 (3), 1363-1366, 2003 | 110 | 2003 |
| AlGaInN-based ultraviolet light-emitting diodes grown on Si (111) G Kipshidze, V Kuryatkov, B Borisov, M Holtz, S Nikishin, H Temkin Applied Physics Letters 80 (20), 3682-3684, 2002 | 109 | 2002 |
| VO2 multidomain heteroepitaxial growth and terahertz transmission modulation C Chen, Y Zhu, Y Zhao, JH Lee, H Wang, A Bernussi, M Holtz, Z Fan Applied Physics Letters 97 (21), 2010 | 102 | 2010 |
| Self-heating study of an AlGaN∕ GaN-based heterostructure field-effect transistor using ultraviolet micro-Raman scattering I Ahmad, V Kasisomayajula, M Holtz, JM Berg, SR Kurtz, CP Tigges, ... Applied Physics Letters 86 (17), 2005 | 100 | 2005 |
Sergey NikishinProfessor of Electrical Engineering, Texas Tech University確認したメール アドレス: ttu.edu