Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect T Takeuchi, C Wetzel, S Yamaguchi, H Sakai, H Amano, I Akasaki, ... Applied physics letters 73 (12), 1691-1693, 1998 | 825 | 1998 |
Micropump and sample-injector for integrated chemical analyzing systems S Shoji, S Nakagawa, M Esashi Sensors and Actuators A: Physical 21 (1-3), 189-192, 1990 | 211 | 1990 |
Widely tunable electroabsorption-modulated sampled-grating DBR laser transmitter YA Akulova, GA Fish, PC Koh, CL Schow, P Kozodoy, AP Dahl, ... IEEE Journal of Selected Topics in Quantum Electronics 8 (6), 1349-1357, 2002 | 170 | 2002 |
Nitride semiconductor light emitting device having a silver p-Contact Y Kondoh, S Watanabe, Y Kaneko, S Nakagawa, N Yamada US Patent 6,194,743, 2001 | 146 | 2001 |
1.55-/spl mu/m InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs S Nakagawa, E Hall, G Almuneau, JK Kim, DA Buell, H Kroemer, ... IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 224-230, 2001 | 101 | 2001 |
A micro chemical analyzing system integrated on a silicon wafer S Nakagawa, S Shoji, M Esashi IEEE Proceedings on Micro Electro Mechanical Systems, An Investigation of …, 1990 | 94 | 1990 |
III-nitride semiconductor light emitting device having a silver p-contact Y Kondoh, S Watanabe, Y Kaneko, S Nakagawa, N Yamada US Patent 7,262,436, 2007 | 76 | 2007 |
88 C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers S Nakagawa, E Hall, G Almuneau, JK Kim, DA Buell, H Kroemer, ... Applied Physics Letters 78 (10), 1337-1339, 2001 | 73 | 2001 |
Semiconductor light emitting device having a silver p-contact Y Kondoh, S Watanabe, Y Kaneko, S Nakagawa, N Yamada US Patent 6,900,472, 2005 | 63 | 2005 |
Second‐harmonic generation from GaAs/AlAs vertical cavity S Nakagawa, N Yamada, N Mikoshiba, DE Mars Applied physics letters 66 (17), 2159-2161, 1995 | 59 | 1995 |
Room-temperature, CW operation of lattice-matched long-wavelength VCSELs E Hall, S Nakagawa, G Almuneau, JK Kim, LA Coldren Electronics Letters 36 (17), 1, 2000 | 57 | 2000 |
Blue vertical-cavity surface-emitting lasers based on second-harmonic generation grown on (311) B and (411) A GaAs substrates Y Kaneko, S Nakagawa, Y Ichimura, N Yamada, DE Mars, T Takeuchi Journal of Applied Physics 87 (4), 1597-1603, 2000 | 52 | 2000 |
Near-room-temperature continuous-wave operation of multiple-active-region 1.55 vertical-cavity lasers with high differential efficiency JK Kim, S Nakagawa, E Hall, LA Coldren Applied Physics Letters 77 (20), 3137-3139, 2000 | 49 | 2000 |
Improved electrical and thermal properties of InP-AlGaAsSb Bragg mirrors for long-wavelength vertical-cavity lasers G Almuneau, E Hall, T Mukaihara, S Nakagawa, C Luo, DR Clarke, ... IEEE Photonics Technology Letters 12 (10), 1322-1324, 2000 | 46 | 2000 |
1.5 mW/Gbps low power optical interconnect transmitter exploiting high-efficiency VCSEL and CMOS driver S Nakagawa, D Kuchta, C Schow, R John, LA Coldren, YC Chang Optical Fiber Communication Conference, OThS3, 2008 | 44 | 2008 |
Energy-efficient 1060-nm optical link operating up to 28 Gb/s JB Héroux, T Kise, M Funabashi, T Aoki, CL Schow, AV Rylyakov, ... Journal of Lightwave Technology 33 (4), 733-740, 2015 | 39 | 2015 |
Selectively etched undercut apertures in AlAsSb-based VCSELs E Hall, S Nakagawa, G Almuneau, JK Kim, LA Coldren IEEE Photonics Technology Letters 13 (2), 97-99, 2001 | 39 | 2001 |
Wavelength monitor using hybrid approach DM Baney, N Yamada, S Watanabe, S Nakagawa, Y Ichimura US Patent 6,486,984, 2002 | 37 | 2002 |
InGaAs/GaAs vertical-cavity surface-emitting lasers on (311) B GaAs substrate Y Kaneko, S Nakagawa, T Takeuchi, DE Mars, N Yamada, N Mikoshiba Electronics Letters 31 (10), 805-806, 1995 | 37 | 1995 |
Molecular beam epitaxial growth of monolithic 1.55 μm vertical cavity surface emitting lasers with AlGaAsSb/AlAsSb Bragg mirrors G Almuneau, E Hall, S Nakagawa, JK Kim, D Lofgreen, O Sjölund, C Luo, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 36 | 2000 |