| A wired-AND transistor: Polarity controllable FET with multiple inputs M Simon, J Trommer, B Liang, D Fischer, T Baldauf, MB Khan, A Heinzig, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 35 | 2018 |
| Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires MB Khan, D Deb, J Kerbusch, F Fuchs, M Löffler, S Banerjee, U Mühle, ... Applied Sciences 9 (17), 3462, 2019 | 21 | 2019 |
| Mid-and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon M Wang, Y Yu, S Prucnal, Y Berencén, MS Shaikh, L Rebohle, MB Khan, ... Nanoscale 14 (7), 2826-2836, 2022 | 11 | 2022 |
| Formation and crystallographic orientation of NiSi2–Si interfaces F Fuchs, M Bilal Khan, D Deb, D Pohl, J Schuster, WM Weber, U Mühle, ... Journal of Applied Physics 128 (8), 085301, 2020 | 10 | 2020 |
| Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing MB Khan, S Prucnal, S Ghosh, D Deb, R Hübner, D Pohl, L Rebohle, ... Langmuir 37 (49), 14284-14291, 2021 | 8 | 2021 |
| Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy S Prucnal, Y Berencén, M Wang, YM Georgiev, A Erbe, MB Khan, ... Journal of Applied Physics 125 (24), 245703, 2019 | 7 | 2019 |
| Formation of n-and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping Y Berencén, S Prucnal, W Möller, R Hübner, L Rebohle, T Schönherr, ... Nanotechnology 29 (47), 474001, 2018 | 6 | 2018 |
| Novel Mixed-Dimensional hBN-Passivated Silicon Nanowire Reconfigurable Field Effect Transistors: Fabrication and Characterization S Ghosh, MB Khan, P Chava, K Watanabe, T Taniguchi, S Prucnal, ... ACS Applied Materials & Interfaces, 2023 | 3 | 2023 |
| Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing MB Khan, S Ghosh, S Prucnal, T Mauersberger, R Hübner, M Simon, ... 2020 Device Research Conference (DRC), 1-2, 2020 | 2 | 2020 |
| Significant Resistance Reduction in Modulation‐Doped Silicon Nanowires via Aluminum‐Induced Acceptor States in SiO2 I Ratschinski, S Nagarajan, J Trommer, A Luferau, M Bilal Khan, A Erbe, ... physica status solidi (a), 0 | 2 | |
| Atomic layer etching of nanowires using conventional reactive ion etching tool MB Khan, S Shakeel, K Richter, S Ghosh, A Erbe, YM Georgiev Journal of Physics: Conference Series 2443 (1), 012004, 2023 | 1 | 2023 |
| Polarity Control in Doped Silicon Junctionless Nanowire Transistor for Sensing Application S Ghosh, A Echresh, MB Khan, D Bhattacharya, U Kentsch, S Prucnal, ... 2024 Device Research Conference (DRC), 1-2, 2024 | | 2024 |
| Compact Model of Junctionless Nanowire Transistor for Air-Pollution Sensor G Angelov, M Spasova, V Garistov, D Nikolov, I Ruskova, R Rusev, ... 2023 46th International Spring Seminar on Electronics Technology (ISSE), 1-5, 2023 | | 2023 |
| Towards Scalable Reconfigurable Field-effect Transistors: Fabrication and Characterization MB Khan Technische Universität Dresden, 2021 | | 2021 |