מאמרים עם הרשאות לגישה ציבורית - Eric Popלמידע נוסף
ללא העלאה: אחד
Modeling the performance and reliability of two-dimensional semiconductor transistors
T Knobloch, D Waldhoer, MR Davoudi, A Karl, P Khakbaz, M Matzinger, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
הרשאות: European Commission
מחברים אחראים: T Grasser, T Knobloch
זמינים באתר כלשהו: 186
Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ...
Nature Electronics 4 (11), 786-799, 2021
הרשאות: US National Science Foundation, Austrian Science Fund
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
הרשאות: National Natural Science Foundation of China
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
CD English, G Shine, VE Dorgan, KC Saraswat, E Pop
Nano Letters 16 (6), 3824–3830, 2016
הרשאות: US National Science Foundation
Electronic synapses made of layered two-dimensional materials
Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ...
Nature Electronics 1 (8), 458-465, 2018
הרשאות: US National Science Foundation, National Natural Science Foundation of China
Li Intercalation in MoS2: In Situ Observation of Its Dynamics and Tuning Optical and Electrical Properties
F Xiong, H Wang, X Liu, J Sun, M Brongersma, E Pop, Y Cui
Nano letters 15 (10), 6777-6784, 2015
הרשאות: US Department of Energy
Approaching the quantum limit in two-dimensional semiconductor contacts
W Li, X Gong, Z Yu, L Ma, W Sun, S Gao, Ç Köroğlu, W Wang, L Liu, T Li, ...
Nature 613 (7943), 274-279, 2023
הרשאות: Chinese Academy of Sciences, National Natural Science Foundation of China
Kinetic Study of Hydrogen Evolution Reaction over Strained MoS2 with Sulfur Vacancies Using Scanning Electrochemical Microscopy
H Li, M Du, MJ Mleczko, AL Koh, Y Nishi, E Pop, AJ Bard, X Zheng
Journal of the American Chemical Society 138 (15), 5123-5129, 2016
הרשאות: US National Science Foundation, Swiss National Science Foundation
Energy-efficient abundant-data computing: the N3XT 1,000x
MMS Aly, M Gao, G Hills, CS Lee, G Pitner, MM Shulaker, TF Wu, ...
Computer 48 (12), 24-33, 2015
הרשאות: Swiss National Science Foundation
HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides
MJ Mleczko, C Zhang, HR Lee, HH Kuo, B Magyari-Köpe, RG Moore, ...
Science Advances 3 (8), e1700481, 2017
הרשאות: US National Science Foundation, US Department of Energy, US Department of …
Stacked Graphene-Al2O3 Nanopore Sensors for Sensitive Detection of DNA and DNA-Protein Complexes
BM Venkatesan, D Estrada, S Banerjee, X Jin, VE Dorgan, MH Bae, ...
ACS Nano 6 (1), 441-450, 2012
הרשאות: US National Institutes of Health
Nonvolatile electrically reconfigurable integrated photonic switch enabled by a silicon PIN diode heater
J Zheng, Z Fang, C Wu, S Zhu, P Xu, JK Doylend, S Deshmukh, E Pop, ...
Advanced Materials 32 (31), 2001218, 2020
הרשאות: US National Science Foundation, US Department of Defense, US National …
Electrically driven reprogrammable phase-change metasurface reaching 80% efficiency
S Abdollahramezani, O Hemmatyar, M Taghinejad, H Taghinejad, ...
Nature Communications 13, 1696, 2022
הרשאות: US National Science Foundation, US Department of Defense, German Research …
GST-on-silicon hybrid nanophotonic integrated circuits: a non-volatile quasi-continuously reprogrammable platform
J Zheng, A Khanolkar, P Xu, S Colburn, S Deshmukh, J Myers, J Frantz, ...
Optical Materials Express 8 (6), 1551-1561, 2018
הרשאות: US National Science Foundation, US Department of Defense
Energy Dissipation in Monolayer MoS2 Electronics
E Yalon, CJ McClellan, KKH Smithe, M Munoz-Rojo, R Xu, ...
Nano Letters 17, 3429-3433, 2017
הרשאות: US National Science Foundation, US Department of Defense
Low Variability in Synthetic Monolayer MoS2 Devices
KKH Smithe, SV Suryavanshi, M Muñoz Rojo, AD Tedjarati, E Pop
ACS Nano 11 (8), 8456-8463, 2017
הרשאות: US National Science Foundation, US Department of Defense
High Current Density in Monolayer MoS2 Doped by AlOx
CJ McClellan, E Yalon, KKH Smithe, SV Suryavanshi, E Pop
ACS Nano 15, 1587−1596, 2021
הרשאות: US National Science Foundation, US Department of Defense
High-performance flexible nanoscale transistors based on transition metal dichalcogenides
A Daus, S Vaziri, V Chen, Ç Köroğlu, RW Grady, CS Bailey, HR Lee, ...
Nature Electronics 4, 495-501, 2021
הרשאות: US National Science Foundation, Swiss National Science Foundation
Ultra-low-energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters
Z Fang, R Chen, J Zheng, AI Khan, KM Neilson, SJ Geiger, DM Callahan, ...
Nature Nanotechnology 17 (8), 842-848, 2022
הרשאות: US National Science Foundation, US Department of Defense
Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices
KKH Smithe, CD English, SV Suryavanshi, E Pop
2D Materials 4 (1), 011009, 2017
הרשאות: US National Science Foundation, US Department of Defense
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