מאמרים עם הרשאות לגישה ציבורית - Kirstin Schaubleלמידע נוסף
לא זמין באתר כלשהו: 1
Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition
KM Price, KE Schauble, FA McGuire, DB Farmer, AD Franklin
ACS applied materials & interfaces 9 (27), 23072-23080, 2017
הרשאות: US National Science Foundation, US Department of Defense
זמינים באתר כלשהו: 7
High-performance flexible nanoscale transistors based on transition metal dichalcogenides
A Daus, S Vaziri, V Chen, Ç Köroğlu, RW Grady, CS Bailey, HR Lee, ...
Nature Electronics 4 (7), 495-501, 2021
הרשאות: US National Science Foundation, Swiss National Science Foundation
Uncovering the Effects of Metal Contacts on Monolayer MoS2
K Schauble, D Zakhidov, E Yalon, S Deshmukh, RW Grady, KA Cooley, ...
ACS nano 14 (11), 14798-14808, 2020
הרשאות: US National Science Foundation, US Department of Energy, US Department of …
Sub-200 Ω· µm alloyed contacts to synthetic monolayer MoS2
A Kumar, K Schauble, KM Neilson, A Tang, P Ramesh, HSP Wong, E Pop, ...
2021 IEEE International Electron Devices Meeting (IEDM), 7.3. 1-7.3. 4, 2021
הרשאות: Swiss National Science Foundation, US Department of Defense
Temperature-dependent contact resistance to nonvolatile memory materials
S Deshmukh, E Yalon, F Lian, KE Schauble, F Xiong, IV Karpov, E Pop
IEEE Transactions on Electron Devices 66 (9), 3816-3821, 2019
הרשאות: US National Science Foundation
Aluminum oxide as a dielectric and passivation layer for (flexible) metal-oxide and 2D semiconductor devices
A Daus, CJ McClellan, K Schauble, JC Costa, RW Grady, L Petti, ...
Oxide-based Materials and Devices XII 11687, 87-94, 2021
הרשאות: US National Science Foundation, Swiss National Science Foundation
Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier
R Islam, S Qin, S Deshmukh, Z Yu, C Köroğlu, AI Khan, K Schauble, ...
Applied Physics Letters 121 (8), 2022
הרשאות: US National Science Foundation, US Department of Defense
3D heterogeneous integration with 2D materials
C McClellan, C Bailey, I Datye, A Gabourie, R Grady, K Schauble, S Vaziri, ...
2019 Silicon Nanoelectronics Workshop (SNW), 1-2, 2019
הרשאות: US National Science Foundation, US Department of Defense
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