| Impedance microbiology-on-a-chip: Microfluidic bioprocessor for rapid detection of bacterial metabolism R Gomez-Sjoberg, DT Morisette, R Bashir Journal of Microelectromechanical Systems 14 (4), 829-838, 2005 | 221 | 2005 |
| Integrated nanoscale silicon sensors using top-down fabrication OH Elibol, D Morisette, D Akin, JP Denton, R Bashir Applied Physics Letters 83 (22), 4613-4615, 2003 | 188 | 2003 |
| Resonant MEMS mass sensors for measurement of microdroplet evaporation K Park, N Kim, DT Morisette, NR Aluru, R Bashir Journal of Microelectromechanical Systems 21 (3), 702-711, 2012 | 89 | 2012 |
| Static and dynamic characterization of large-area high-current-density SiC Schottky diodes DT Morisette, JA Cooper, MR Melloch, GM Dolny, PM Shenoy, M Zafrani, ... IEEE Transactions on electron devices 48 (2), 349-352, 2001 | 82 | 2001 |
| Performance limits of vertical unipolar power devices in GaN and 4H-SiC JA Cooper, DT Morisette IEEE electron device letters 41 (6), 892-895, 2020 | 69 | 2020 |
| PCR-based detection in a micro-fabricated platform S Bhattacharya, S Salamat, D Morisette, P Banada, D Akin, YS Liu, ... Lab on a Chip 8 (7), 1130-1136, 2008 | 67 | 2008 |
| Interface trapping in (2¯ 01) β-Ga2O3 MOS capacitors with deposited dielectrics A Jayawardena, RP Ramamurthy, AC Ahyi, D Morisette, S Dhar Applied Physics Letters 112 (19), 2018 | 66 | 2018 |
| Theoretical comparison of SiC PiN and Schottky diodes based on power dissipation considerations DT Morisette, JA Cooper IEEE Transactions on Electron Devices 49 (9), 1657-1664, 2002 | 60 | 2002 |
| Electrical detection of dsDNA and polymerase chain reaction amplification E Salm, YS Liu, D Marchwiany, D Morisette, Y He, A K Bhunia, R Bashir Biomedical microdevices 13, 973-982, 2011 | 42 | 2011 |
| 4 kV silicon carbide Schottky diodes for high-frequency switching applications HM McGlothlin, DT Morisette, JA Cooper, MR Melloch 1999 57th annual device research conference digest (Cat. No. 99TH8393), 42-43, 1999 | 42 | 1999 |
| Biomems cartridges D Morisette, K Lee, H Selim, B Erimli, L Razouk, R Bashir US Patent App. 11/440,432, 2007 | 24 | 2007 |
| Impact of material defects on SiC Schottky barrier diodes DT Morisette, JA Cooper Materials Science Forum 389, 1133-1136, 2002 | 24 | 2002 |
| Design guidelines for superjunction devices in the presence of charge imbalance M Alam, DT Morisette, JA Cooper IEEE transactions on electron devices 65 (8), 3345-3351, 2018 | 23 | 2018 |
| Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence C Jiao, AC Ahyi, C Xu, D Morisette, LC Feldman, S Dhar Journal of Applied Physics 119 (15), 2016 | 23 | 2016 |
| A wearable real-time CMOS dosimeter with integrated zero-bias floating gate sensor and an 861-nW 18-bit energy-resolution scalable time-based radiation to digital converter B Chatterjee, C Mousoulis, DH Seo, A Kumar, S Maity, SM Scott, ... IEEE Journal of Solid-State Circuits 55 (3), 650-665, 2019 | 22 | 2019 |
| Apparatus and method for detecting live cells with an integrated filter and growth detection device R Bashir, LR Razouk, DT Morisette, B Erimli US Patent 7,413,891, 2008 | 22 | 2008 |
| Development of robust power Schottky barrier diodes in silicon carbide DT Morisette Purdue University, 2001 | 20 | 2001 |
| The tri-gate MOSFET: a new vertical power transistor in 4H-SiC RP Ramamurthy, N Islam, M Sampath, DT Morisette, JA Cooper IEEE Electron Device Letters 42 (1), 90-93, 2020 | 15 | 2020 |
| Comparison of single-and double-trench UMOSFETs in 4H-SiC M Sampath, D Morisette, JA Cooper Materials Science Forum 924, 752-755, 2018 | 15 | 2018 |
| Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors IU Jayawardhena, RP Ramamurthy, D Morisette, AC Ahyi, R Thorpe, ... Journal of Applied Physics 129 (7), 2021 | 13 | 2021 |
