מאמרים עם הרשאות לגישה ציבורית - Alwin Dausלמידע נוסף
לא זמינים באתר כלשהו: 6
Metal‐halide perovskites for gate dielectrics in field‐effect transistors and photodetectors enabled by PMMA lift‐off process
A Daus, C Roldán‐Carmona, K Domanski, S Knobelspies, G Cantarella, ...
Advanced Materials 30 (23), 1707412, 2018
הרשאות: Swiss National Science Foundation, European Commission
Long-Term Aging of Al2O3 Passivated and Unpassivated Flexible a-IGZO TFTs
JC Costa, APYP Kermani, G Cantarella, L Petti, C Vogt, A Daus, ...
IEEE Transactions on Electron Devices 67 (11), 4934-4939, 2020
הרשאות: German Research Foundation, UK Engineering and Physical Sciences Research …
Perovskite and 2D Semiconductor Integration into Flexible Transistors and Sensors
A Daus, QT Phùng
2023 IEEE International Flexible Electronics Technology Conference (IFETC …, 2023
הרשאות: US National Science Foundation, Swiss National Science Foundation, German …
Forming-Free Resistive Switching by Lateral Ag Ion Migration on MoS 2
S Cruces, L Völkel, J Lee, A Esteki, D Braun, A Grundmann, H Kalisch, ...
2023 Silicon Nanoelectronics Workshop (SNW), 107-108, 2023
הרשאות: Federal Ministry of Education and Research, Germany
Flexible Electronics With Two-Dimensional and Layered Chalcogenide Compounds
A Daus
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
הרשאות: US National Science Foundation, Swiss National Science Foundation
Design and simulation of a 800 Mbit/s data link for magnetic resonance imaging wearables
C Vogt, L Büthe, L Petti, G Cantarella, N Münzenrieder, A Daus, G Tröster
2015 37th Annual International Conference of the IEEE Engineering in …, 2015
הרשאות: Swiss National Science Foundation
זמינים באתר כלשהו: 29
Biodegradable and highly deformable temperature sensors for the internet of things
GA Salvatore, J Sülzle, F Dalla Valle, G Cantarella, F Robotti, P Jokic, ...
Advanced Functional Materials 27 (35), 1702390, 2017
הרשאות: Swiss National Science Foundation
High-performance flexible nanoscale transistors based on transition metal dichalcogenides
A Daus, S Vaziri, V Chen, Ç Köroğlu, RW Grady, CS Bailey, HR Lee, ...
Nature Electronics 4 (7), 495-501, 2021
הרשאות: US National Science Foundation, Swiss National Science Foundation
High-specific-power flexible transition metal dichalcogenide solar cells
K Nassiri Nazif*, A Daus*, J Hong, N Lee, S Vaziri, A Kumar, F Nitta, ...
Nature Communications 12, 7034, 2021
הרשאות: US National Science Foundation, US Department of Energy, Swiss National …
Ultralow–switching current density multilevel phase-change memory on a flexible substrate
AI Khan*, A Daus*, R Islam, KM Neilson, HR Lee, HSP Wong, E Pop
Science 373 (6560), 1243-1247, 2021
הרשאות: Swiss National Science Foundation
Strain-Enhanced Mobility of Monolayer MoS2
IM Datye, A Daus, RW Grady, K Brenner, S Vaziri, E Pop
Nano Letters 22 (20), 8052-8059, 2022
הרשאות: US National Science Foundation, Swiss National Science Foundation, US …
Photo-induced room-temperature gas sensing with a-IGZO based thin-film transistors fabricated on flexible plastic foil
S Knobelspies, B Bierer, A Daus, A Takabayashi, GA Salvatore, ...
Sensors 18 (2), 358, 2018
הרשאות: Swiss National Science Foundation, Government of Spain
Fast-response flexible temperature sensors with atomically thin molybdenum disulfide
A Daus, M Jaikissoon, AI Khan, A Kumar, RW Grady, KC Saraswat, E Pop
Nano Letters 22 (15), 6135-6140, 2022
הרשאות: US National Science Foundation
Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs
A Daus, C Vogt, N Münzenrieder, L Petti, S Knobelspies, G Cantarella, ...
IEEE Transactions on Electron Devices 64 (7), 2789-2796, 2017
הרשאות: Swiss National Science Foundation
Ferroelectric‐like charge trapping thin‐film transistors and their evaluation as memories and synaptic devices
A Daus, P Lenarczyk, L Petti, N Münzenrieder, S Knobelspies, ...
Advanced Electronic Materials 3 (12), 1700309, 2017
הרשאות: Swiss National Science Foundation
Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators
A Daus, C Vogt, N Münzenrieder, L Petti, S Knobelspies, G Cantarella, ...
Journal of Applied Physics 120 (24), 2016
הרשאות: Swiss National Science Foundation
Potential of transition metal dichalcogenide transistors for flexible electronics applications
A Piacentini, A Daus, Z Wang, MC Lemme, D Neumaier
Advanced Electronic Materials 9 (8), 2300181, 2023
הרשאות: German Research Foundation, European Commission
Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment
S Knobelspies, A Takabayashi, A Daus, G Cantarella, N Münzenrieder, ...
Solid-State Electronics 150, 23-27, 2018
הרשאות: Swiss National Science Foundation
A Purcell-enabled monolayer semiconductor free-space optical modulator
Q Li, JH Song, F Xu, J van de Groep, J Hong, A Daus, YJ Lee, ...
Nature Photonics 17 (10), 897-903, 2023
הרשאות: US Department of Energy, US Department of Defense
Flexible CMOS electronics based on p-type Ge2Sb2Te5and n-type InGaZnO4semiconductors
A Daus, S Han, S Knobelspies, G Cantarella, C Vogt, N Münzenrieder, ...
2017 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2017
הרשאות: Swiss National Science Foundation
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