עקוב אחר
Kazuhito Tsukagoshi
Kazuhito Tsukagoshi
כתובת אימייל מאומתת בדומיין nims.go.jp - דף הבית
כותרת
צוטט על ידי
צוטט על ידי
שנה
Coherent transport of electron spin in a ferromagnetically contacted carbon nanotube
K Tsukagoshi, BW Alphenaar, H Ago
Nature 401 (6753), 572-574, 1999
10021999
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
SL Li, K Tsukagoshi, E Orgiu, P Samorì
Chemical Society Reviews 45 (1), 118-151, 2016
5672016
Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
YF Lin, Y Xu, ST Wang, SL Li, M Yamamoto, A Aparecido‐Ferreira, W Li, ...
Advanced Materials 26 (20), 3263-3269, 2014
4792014
Solution‐processable organic single crystals with bandlike transport in field‐effect transistors
C Liu, T Minari, X Lu, A Kumatani, K Takimiya, K Tsukagoshi
Advanced Materials 23 (4), 523-526, 2011
4232011
Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates
SL Li, H Miyazaki, H Song, H Kuramochi, S Nakaharai, K Tsukagoshi
ACS nano 6 (8), 7381–7388, 2012
4212012
Simple and scalable gel-based separation of metallic and semiconducting carbon nanotubes
T Tanaka, H Jin, Y Miyata, S Fujii, H Suga, Y Naitoh, T Minari, T Miyadera, ...
Nano Letters 9 (4), 1497-1500, 2009
4212009
Thickness-dependent interfacial coulomb scattering in atomically thin field-effect transistors
SL Li, K Wakabayashi, Y Xu, S Nakaharai, K Komatsu, WW Li, YF Lin, ...
Nano Letters 13 (8), 3546-3552, 2013
3772013
Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe2
M Yamamoto, ST Wang, M Ni, YF Lin, SL Li, S Aikawa, WB Jian, K Ueno, ...
ACS Nano 8 (4), 3895-3903, 2014
3472014
High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits
HS Song, SL Li, L Gao, Y Xu, K Ueno, J Tang, YB Cheng, K Tsukagoshi
Nanoscale 5 (20), 9666-9670, 2013
3282013
Low‐Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO‐SnO2 Heterojunction Nanofibers
W Tian, T Zhai, C Zhang, SL Li, X Wang, F Liu, D Liu, X Cai, K Tsukagoshi, ...
Advanced Materials 25 (33), 4625-4630, 2013
3092013
Self-Limiting Layer-by-Layer Oxidation of Atomically Thin WSe2
M Yamamoto, S Dutta, S Aikawa, S Nakaharai, K Wakabayashi, ...
Nano Letters 15 (3), 2067–2073, 2015
2572015
Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition
HS Song, SL Li, H Miyazaki, S Sato, K Hayashi, A Yamada, N Yokoyama, ...
Scientific Reports 2, 00337, 2012
2372012
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors
Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo
Journal of Applied Physics 107 (11), 2010
2312010
Ambipolar-transporting coaxial nanotubes with a tailored molecular graphene–fullerene heterojunction
Y Yamamoto, G Zhang, W Jin, T Fukushima, N Ishii, A Saeki, S Seki, ...
Proceedings of the National Academy of Sciences 106 (50), 21051-21056, 2009
1982009
Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors
M Kano, T Minari, K Tsukagoshi
Applied Physics Letters 94 (14), 2009
1972009
Carbon nanotube devices for nanoelectronics
K Tsukagoshi, N Yoneya, S Uryu, Y Aoyagi, A Kanda, Y Ootuka, ...
Physica B: Condensed Matter 323 (1-4), 107-114, 2002
1952002
Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers
SL Li, K Komatsu, S Nakaharai, YF Lin, M Yamamoto, XF Duan, ...
ACS nano 8 (12), 12836-12842, 2014
1902014
Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts
M Yamamoto, S Nakaharai, K Ueno, K Tsukagoshi
Nano letters 16 (4), 2720–2727, 2016
1892016
In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors
J Takeya, J Kato, K Hara, M Yamagishi, R Hirahara, K Yamada, ...
Physical Review Letters 98 (19), 196804, 2007
1852007
Hall effect of quasi-hole gas in organic single-crystal transistors
J Takeya, K Tsukagoshi, Y Aoyagi, T Takenobu, Y Iwasa
Japanese Journal of Applied Physics 44 (11L), L1393, 2005
1802005
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מאמרים 1–20