עקוב אחר
Iktiham Bin Taher
Iktiham Bin Taher
Research Associate - GaN Power Electronic and Sensor
כתובת אימייל מאומתת בדומיין isit.fraunhofer.de - דף הבית
כותרת
צוטט על ידי
צוטט על ידי
שנה
V2O5 gas sensors: A review‏
R Alrammouz, M Lazerges, J Pironon, IB Taher, A Randi, Y Halfaya, ...‏
Sensors and Actuators A: Physical 332, 113179, 2021‏
602021
GaN-based double gate MOSFETs: effect of gate length‏
S Ahmed, MIB Taher, MT Hasan, MS Islam‏
2016 IEEE Region 10 Conference (TENCON), 2334-2337, 2016‏
52016
High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer‏
MIB Taher, Y Halfaya, R Alrammouz, M Lazerges, A Randi, T Moudakir, ...‏
2021 IEEE Sensors, 1-4, 2021‏
32021
High Electron Mobility Transistor (HEMT) based hydrogen sensor for deep-surface applications: Effect of Air and N2 atmosphere‏
MIB Taher, M Kumar, Y Halfaya, M Lazerges, NY Sama, K Bouzid, ...‏
International Journal of Hydrogen Energy 55, 1514-1522, 2024‏
22024
GaN-based Sub-10 nm Metal-Oxide-Semiconductor Field-Effect Transistors‏
MIB Taher, S Ahmed‏
22016
New HEMT Type Sensors for In-situ Bio‐Geochemical Analysis‏
MIB Taher‏
Université de Lorraine, 2022‏
2022
A Pragmatic Approach for Managing Maximum Power Demand with Generator Control Mechanism Using PIC Microcontroller‏
FFT Md. Humayun Kabir, Md. Iktiham Bin Taher*, Shams Ul Islam‏
Journal of Power Electronics & Power Systems 8 (2), 11-18, 2018‏
2018
Effects of Doping Concentration on Device Performance of GaN-based Nano-regime MOSFETs‏
MIB Taher, MT Hasan‏
AIUB Journal of Science and Engineering (AJSE) 16 (1), 69-74, 2017‏
2017
Effects of High-κ on Device Performance of Nano-Regime GaN-based MOSFETs‏
MIB Taher, MT Hasan‏
2016
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מאמרים 1–9