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| 3D Monolithic Stacked 1T1R cells using Monolayer MoS2 FET and hBN RRAM Fabricated at Low (150°C) Temperature CH Wang, C McClellan, Y Shi, X Zheng, V Chen, M Lanza, E Pop, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2018 | 57 | 2018 |
| Unipolar n-type black phosphorus transistors with low work function contacts CH Wang, JAC Incorvia, CJ McClellan, AC Yu, MJ Mleczko, E Pop, ... Nano letters 18 (5), 2822-2827, 2018 | 51 | 2018 |
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| Cu diffusion barrier: Graphene benchmarked to TaN for ultimate interconnect scaling L Li, X Chen, CH Wang, S Lee, J Cao, SS Roy, MS Arnold, HSP Wong 2015 Symposium on VLSI Technology (VLSI Technology), T122-T123, 2015 | 31 | 2015 |
| First Principles Study of Memory Selectors using Heterojunctions of 2D Layered Materials L Li, B Magyari-Köpe, CH Wang, S Deshmukh, Z Jiang, H Li, Y Yang, H Li, ... 2018 IEEE International Electron Devices Meeting (IEDM), 24.3. 1-24.3. 4, 2018 | 7 | 2018 |
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| A novel high-density embedded AND-type split gate flash memory WC Shen, CH Wang, HW Pan, ZS Yang, Y Der Chih, TL Lee, CW Lien, ... Japanese Journal of Applied Physics 53 (4S), 04ED08, 2014 | 4 | 2014 |
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