Over 1.5 μm light emission from InAs quantum dots embedded in InGaAs strain-reducing layer grown by metalorganic chemical vapor deposition J Tatebayashi, M Nishioka, Y Arakawa
Applied Physics Letters 78 (22), 3469-3471, 2001
355 2001 Room-temperature lasing in a single nanowire with quantum dots J Tatebayashi, S Kako, J Ho, Y Ota, S Iwamoto, Y Arakawa
Nature Photonics 9 (8), 501-505, 2015
213 2015 Size, shape, and strain dependence of the T Nakaoka, T Saito, J Tatebayashi, Y Arakawa
Physical Review B—Condensed Matter and Materials Physics 70 (23), 235337, 2004
159 2004 Low-threshold near-infrared GaAs–AlGaAs core–shell nanowire plasmon laser J Ho, J Tatebayashi, S Sergent, CF Fong, S Iwamoto, Y Arakawa
Acs Photonics 2 (1), 165-171, 2015
125 2015 III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ...
Applied physics letters 89 (16), 2006
114 2006 A nanowire-based plasmonic quantum dot laser J Ho, J Tatebayashi, S Sergent, CF Fong, Y Ota, S Iwamoto, Y Arakawa
Nano letters 16 (4), 2845-2850, 2016
81 2016 1.28 μm lasing from stacked InAs∕ GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metalorganic chemical vapor deposition J Tatebayashi, N Hatori, M Ishida, H Ebe, M Sugawara, Y Arakawa, ...
Applied Physics Letters 86 (5), 2005
81 2005 Narrow photoluminescence linewidth T Yang, J Tatebayashi, S Tsukamoto, M Nishioka, Y Arakawa
Applied physics letters 84 (15), 2817-2819, 2004
81 2004 Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well J Tatebayashi, A Khoshakhlagh, SH Huang, G Balakrishnan, LR Dawson, ...
Applied Physics Letters 90 (26), 2007
72 2007 Tuning of T Nakaoka, T Saito, J Tatebayashi, S Hirose, T Usuki, N Yokoyama, ...
Physical Review B—Condensed Matter and Materials Physics 71 (20), 205301, 2005
72 2005 Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots P Jayavel, H Tanaka, T Kita, O Wada, H Ebe, M Sugawara, J Tatebayashi, ...
Applied physics letters 84 (11), 1820-1822, 2004
72 2004 Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids PS Wong, G Balakrishnan, N Nuntawong, J Tatebayashi, DL Huffaker
Applied Physics Letters 90 (18), 2007
65 2007 Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut S Ichikawa, K Shiomi, T Morikawa, D Timmerman, Y Sasaki, ...
Applied Physics Express 14 (3), 031008, 2021
63 2021 Formation and optical characteristics of strain-relieved and densely stacked GaSb∕ GaAs quantum dots J Tatebayashi, A Khoshakhlagh, SH Huang, LR Dawson, G Balakrishnan, ...
Applied Physics Letters 89 (20), 2006
63 2006 Area-controlled growth of InAs quantum dots and improvement of density and size distribution J Tatebayashi, M Nishioka, T Someya, Y Arakawa
Applied Physics Letters 77 (21), 3382-3384, 2000
63 2000 Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters J Tatebayashi, Y Ota, S Ishida, M Nishioka, S Iwamoto, Y Arakawa
Applied Physics Letters 100 (26), 2012
61 2012 Room temperature continuous wave lasing in InAs quantum-dot microdisks with air cladding T Ide, T Baba, J Tatebayashi, S Iwamoto, T Nakaoka, Y Arakawa
Optics express 13 (5), 1615-1620, 2005
59 2005 InAs∕ GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—effects of postgrowth annealing on stacked inas quantum dots J Tatebayashi, Y Arakawa, N Hatori, H Ebe, M Sugawara, H Sudo, ...
Applied physics letters 85 (6), 1024-1026, 2004
59 2004 Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemicalvapour deposition J Tatebayashi, N Hatori, H Kakuma, H Ebe, H Sudo, A Kuramata, ...
Electronics Letters 39 (15), 1130-1131, 2003
59 2003 Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices J Tatebayashi, N Nuntawong, PS Wong, YC Xin, LF Lester, DL Huffaker
Journal of Physics D: Applied Physics 42 (7), 073002, 2009
57 2009 
D.L. Huffaker, Diana Huffaker, Diana L...Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLAכתובת אימייל מאומתת בדומיין uta.edu
