| Observation of plasmon propagation, redirection, and fan-out in silver nanowires AW Sanders, DA Routenberg, BJ Wiley, Y Xia, ER Dufresne, MA Reed Nano letters 6 (8), 1822-1826, 2006 | 509 | 2006 |
| Hidden dynamics in the unfolding of individual bacteriorhodopsin proteins H Yu, MGW Siewny, DT Edwards, AW Sanders, TT Perkins Science 355 (6328), 945-950, 2017 | 229 | 2017 |
| Template synthesis of gold nanoparticles with an organic molecular cage R McCaffrey, H Long, Y Jin, A Sanders, W Park, W Zhang Journal of the American Chemical Society 136 (5), 1782-1785, 2014 | 220 | 2014 |
| Very black infrared detector from vertically aligned carbon nanotubes and electric-field poling of lithium tantalate J Lehman, A Sanders, L Hanssen, B Wilthan, J Zeng, C Jensen Nano letters 10 (9), 3261-3266, 2010 | 168 | 2010 |
| Electrical characterization of single GaN nanowires E Stern, G Cheng, E Cimpoiasu, R Klie, S Guthrie, J Klemic, I Kretzschmar, ... Nanotechnology 16 (12), 2941, 2005 | 141 | 2005 |
| Controlled nucleation of GaN nanowires grown with molecular beam epitaxy KA Bertness, AW Sanders, DM Rourke, TE Harvey, A Roshko, ... Advanced functional materials 20 (17), 2911-2915, 2010 | 136 | 2010 |
| Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy NA Sanford, PT Blanchard, KA Bertness, L Mansfield, JB Schlager, ... Journal of Applied Physics 107 (3), 2010 | 127 | 2010 |
| Precise Measurement of the to Fine Structure Interval in the State of Helium J Castillega, D Livingston, A Sanders, D Shiner Physical Review Letters 84 (19), 4321, 2000 | 104 | 2000 |
| Biomass particle models with realistic morphology and resolved microstructure for simulations of intraparticle transport phenomena PN Ciesielski, MF Crowley, MR Nimlos, AW Sanders, GM Wiggins, ... Energy & Fuels 29 (1), 242-254, 2015 | 100 | 2015 |
| Development of a broadband NbTiN traveling wave parametric amplifier for MKID readout C Bockstiegel, J Gao, MR Vissers, M Sandberg, S Chaudhuri, A Sanders, ... Journal of Low Temperature Physics 176, 476-482, 2014 | 100 | 2014 |
| On-chip optical interconnects made with gallium nitride nanowires MD Brubaker, PT Blanchard, JB Schlager, AW Sanders, A Roshko, ... Nano letters 13 (2), 374-377, 2013 | 98 | 2013 |
| Polarity-controlled GaN/AlN nucleation layers for selective-area growth of GaN nanowire arrays on Si (111) substrates by molecular beam epitaxy MD Brubaker, SM Duff, TE Harvey, PT Blanchard, A Roshko, AW Sanders, ... Crystal Growth & Design 16 (2), 596-604, 2016 | 92 | 2016 |
| MESFETs made from individual GaN nanowires PT Blanchard, KA Bertness, TE Harvey, LM Mansfield, AW Sanders, ... IEEE transactions on nanotechnology 7 (6), 760-765, 2008 | 78 | 2008 |
| Optimizing 1-μs-resolution single-molecule force spectroscopy on a commercial atomic force microscope DT Edwards, JK Faulk, AW Sanders, MS Bull, R Walder, MA LeBlanc, ... Nano letters 15 (10), 7091-7098, 2015 | 73 | 2015 |
| Engineering plant cell walls: tuning lignin monomer composition for deconstructable biofuel feedstocks or resilient biomaterials PN Ciesielski, MG Resch, B Hewetson, JP Killgore, A Curtin, N Anderson, ... Green Chemistry 16 (5), 2627-2635, 2014 | 66 | 2014 |
| Fractal fluctuations in cardiac time series BJ West, R Zhang, AW Sanders, S Miniyar, JH Zuckerman, BD Levine Physica A: Statistical Mechanics and its Applications 270 (3-4), 552-566, 1999 | 64 | 1999 |
| GaN nanowire carrier concentration calculated from light and dark resistance measurements LM Mansfield, KA Bertness, PT Blanchard, TE Harvey, AW Sanders, ... Journal of electronic materials 38, 495-504, 2009 | 52 | 2009 |
| Studies of photoconductivity and field effect transistor behavior in examining drift mobility, surface depletion, and transient effects in Si-doped GaN nanowires in vacuum and air NA Sanford, LH Robins, PT Blanchard, K Soria, B Klein, BS Eller, ... Journal of Applied Physics 113 (17), 2013 | 49 | 2013 |
| Preparation of nanocomposite plasmonic films made from cellulose nanocrystals or mesoporous silica decorated with unidirectionally aligned gold nanorods MG Campbell, Q Liu, A Sanders, JS Evans, II Smalyukh Materials 7 (4), 3021-3033, 2014 | 47 | 2014 |
| MOSFETs made from GaN nanowires with fully conformal cylindrical gates PT Blanchard, KA Bertness, TE Harvey, AW Sanders, NA Sanford, ... IEEE transactions on nanotechnology 11 (3), 479-482, 2011 | 38 | 2011 |