Coverage and connectivity in WSNs: A survey, research issues and challenges A Tripathi, HP Gupta, T Dutta, R Mishra, KK Shukla, S Jit
IEEE Access 6, 26971-26992, 2018
216 2018 2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2 /HfO2 Stacked Gate-Oxide Structure S Kumar, E Goel, K Singh, B Singh, PK Singh, K Baral, S Jit
IEEE Transactions on Electron Devices 64 (3), 960-968, 2017
184 2017 A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2 /High- S Kumar, E Goel, K Singh, B Singh, M Kumar, S Jit
IEEE Transactions on Electron Devices 63 (8), 3291-3299, 2016
154 2016 Device and circuit-level assessment of GaSb/Si heterojunction vertical tunnel-FET for low-power applications MR Tripathy, AK Singh, A Samad, S Chander, K Baral, PK Singh, S Jit
IEEE Transactions on Electron Devices 67 (3), 1285-1292, 2020
135 2020 2-D analytical modeling of threshold voltage for graded-channel dual-material double-gate MOSFETs E Goel, S Kumar, K Singh, B Singh, M Kumar, S Jit
IEEE Transactions on Electron Devices 63 (3), 966-973, 2016
119 2016 CuO nanowire-based extended-gate field-effect-transistor (FET) for pH sensing and enzyme-free/receptor-free glucose sensing applications AK Mishra, DK Jarwal, B Mukherjee, A Kumar, S Ratan, S Jit
IEEE Sensors Journal 20 (9), 5039-5047, 2020
79 2020 Analytical modeling of channel potential and threshold voltage of double-gate junctionless FETs with a vertical Gaussian-like doping profile B Singh, D Gola, K Singh, E Goel, S Kumar, S Jit
IEEE Transactions on Electron Devices 63 (6), 2299-2305, 2016
78 2016 Ultraviolet Detection Properties of p-Si/n-TiO2 Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study G Rawat, D Somvanshi, H Kumar, Y Kumar, C Kumar, S Jit
IEEE Transactions on Nanotechnology 15 (2), 193-200, 2015
77 2015 A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors PK Tiwari, S Dubey, M Singh, S Jit
Journal of Applied Physics 108 (7), 2010
77 2010 A 2D analytical model of the channel potential and threshold voltage of double-gate (DG) MOSFETs with vertical Gaussian doping profile PK Tiwari, S Kumar, S Mittal, V Srivastava, U Pandey, S Jit
2009 International Multimedia, Signal Processing and Communication …, 2009
77 2009 A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical … S Dubey, PK Tiwari, S Jit
Journal of Applied Physics 108 (3), 2010
75 2010 2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2 /HfO2 Stacked Gate-Oxide Structure S Kumar, K Singh, S Chander, E Goel, PK Singh, K Baral, B Singh, S Jit
IEEE Transactions on Electron Devices 65 (1), 331-338, 2017
73 2017 Ultraviolet photodetection properties of ZnO/Si heterojunction diodes fabricated by ALD technique without using a buffer layer P Hazra, SK Singh, S Jit
JSTS: Journal of Semiconductor Technology and Science 14 (1), 117-123, 2014
70 2014 Mean barrier height and Richardson constant for Pd/ZnO thin film-based Schottky diodes grown on n-Si substrates by thermal evaporation method D Somvanshi, S Jit
IEEE electron device letters 34 (10), 1238-1240, 2013
68 2013 Temperature analysis of Ge/Si heterojunction SOI-tunnel FET S Chander, SK Sinha, S Kumar, PK Singh, K Baral, K Singh, S Jit
Superlattices and Microstructures 110, 162-170, 2017
64 2017 Colloidal ZnO quantum dots based spectrum selective ultraviolet photodetectors Y Kumar, H Kumar, G Rawat, C Kumar, A Sharma, BN Pal, S Jit
IEEE Photonics Technology Letters 29 (4), 361-364, 2017
62 2017 Electrical and ammonia gas sensing properties of poly (3, 3‴-dialkylquaterthiophene) based organic thin film transistors fabricated by floating-film transfer method C Kumar, G Rawat, H Kumar, Y Kumar, R Prakash, S Jit
Organic Electronics 48, 53-60, 2017
61 2017 Sol-gel-based highly sensitive Pd/n-ZnO thin film/n-Si Schottky ultraviolet photodiodes AB Yadav, A Pandey, D Somvanshi, S Jit
IEEE Transactions on Electron Devices 62 (6), 1879-1884, 2015
59 2015 Analysis of temperature-dependent electrical characteristics of n-ZnO nanowires (NWs)/p-Si heterojunction diodes D Somvanshi, S Jit
IEEE transactions on nanotechnology 13 (1), 62-69, 2013
58 2013 III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications MR Tripathy, AK Singh, K Baral, PK Singh, S Jit
Superlattices and Microstructures 142, 106494, 2020
57 2020 
Dr. Kamalaksha BaralAssistant Professor, ECE, V R Siddhartha Engineering Collegeכתובת אימייל מאומתת בדומיין iitbhu.ac.in