מאמרים עם הרשאות לגישה ציבורית - Alexander Brinkmanלמידע נוסף
לא זמינים באתר כלשהו: 2
In Situ Characterization Tools for Bi2Te3 Topological Insulator Nanomaterials
P Ngabonziza, MP Stehno, G Koster, A Brinkman
In-situ Characterization Techniques for Nanomaterials, 223-250, 2018
הרשאות: Netherlands Organisation for Scientific Research, European Commission
Nonlocal spin-entangled Andreev reflection, fractional charge, and current-phase relations in topological bilayer-exciton-condensate junctions
M Veldhorst, M Hoek, M Snelder, H Hilgenkamp, AA Golubov, A Brinkman
Physical Review B 90 (3), 035428, 2014
הרשאות: Australian Research Council
זמינים באתר כלשהו: 67
Orbital Reconstruction and the Two-Dimensional Electron Gas at the Interface
M Salluzzo, JC Cezar, NB Brookes, V Bisogni, GM De Luca, C Richter, ...
Physical review letters 102 (16), 166804, 2009
הרשאות: German Research Foundation
Insights into teaching quantum mechanics in secondary and lower undergraduate education
K Krijtenburg-Lewerissa, HJ Pol, A Brinkman, WR van Joolingen
Physical review physics education research 13 (1), 010109, 2017
הרשאות: Netherlands Organisation for Scientific Research
Parallel electron-hole bilayer conductivity from electronic interface reconstruction
R Pentcheva, M Huijben, K Otte, WE Pickett, JE Kleibeuker, J Huijben, ...
Physical review letters 104 (16), 166804, 2010
הרשאות: German Research Foundation
Defect engineering in oxide heterostructures by enhanced oxygen surface exchange
M Huijben, G Koster, MK Kruize, S Wenderich, J Verbeeck, S Bals, ...
Advanced functional materials 23 (42), 5240-5248, 2013
הרשאות: Research Foundation (Flanders)
4π-periodic Andreev bound states in a Dirac semimetal
C Li, JC de Boer, B de Ronde, SV Ramankutty, E van Heumen, Y Huang, ...
Nature materials 17 (10), 875-880, 2018
הרשאות: Netherlands Organisation for Scientific Research, European Commission
Selective area growth and stencil lithography for in situ fabricated quantum devices
P Schüffelgen, D Rosenbach, C Li, TW Schmitt, M Schleenvoigt, AR Jalil, ...
Nature nanotechnology 14 (9), 825-831, 2019
הרשאות: German Research Foundation, Helmholtz Association
Upper Limit to Magnetism in Heterostructures
MR Fitzsimmons, NW Hengartner, S Singh, M Zhernenkov, FY Bruno, ...
Physical review letters 107 (21), 217201, 2011
הרשאות: Government of Spain
Key topics for quantum mechanics at secondary schools: a Delphi study into expert opinions
K Krijtenburg-Lewerissa, HJ Pol, A Brinkman, WR Van Joolingen
International journal of science education 41 (3), 349-366, 2019
הרשאות: Netherlands Organisation for Scientific Research
Gate-Tunable Band Structure of the Interface
AEM Smink, JC De Boer, MP Stehno, A Brinkman, WG Van Der Wiel, ...
Physical review letters 118 (10), 106401, 2017
הרשאות: Netherlands Organisation for Scientific Research, European Commission
-Periodic Supercurrent from Surface States in Nanowire-Based Josephson Junctions
AQ Wang, CZ Li, C Li, ZM Liao, A Brinkman, DP Yu
Physical review letters 121 (23), 237701, 2018
הרשאות: National Natural Science Foundation of China, Netherlands Organisation for …
Critical behavior at a dynamic vortex insulator-to-metal transition
N Poccia, TI Baturina, F Coneri, CG Molenaar, XR Wang, G Bianconi, ...
Science 349 (6253), 1202-1205, 2015
הרשאות: US Department of Energy, European Commission, Government of Argentina
In situ spectroscopy of intrinsic topological insulator thin films and impact of extrinsic defects
P Ngabonziza, R Heimbuch, N De Jong, RA Klaassen, MP Stehno, ...
Physical Review B 92 (3), 035405, 2015
הרשאות: European Commission
Bulk and surface states carried supercurrent in ballistic Nb-Dirac semimetal nanowire-Nb junctions
CZ Li, C Li, LX Wang, S Wang, ZM Liao, A Brinkman, DP Yu
Physical Review B 97 (11), 115446, 2018
הרשאות: National Natural Science Foundation of China
Reducing electronic transport dimension to topological hinge states by increasing geometry size of Dirac semimetal Josephson junctions
CZ Li, AQ Wang, C Li, WZ Zheng, A Brinkman, DP Yu, ZM Liao
Physical review letters 124 (15), 156601, 2020
הרשאות: National Natural Science Foundation of China
Gate‐Tunable Transport Properties of In Situ Capped Bi2Te3 Topological Insulator Thin Films
P Ngabonziza, MP Stehno, H Myoren, VA Neumann, G Koster, ...
Advanced electronic materials 2 (8), 1600157, 2016
הרשאות: Netherlands Organisation for Scientific Research, European Commission
Electronic reconstruction at -type interfaces
J Verbeeck, S Bals, AN Kravtsova, D Lamoen, M Luysberg, M Huijben, ...
Physical Review B—Condensed Matter and Materials Physics 81 (8), 085113, 2010
הרשאות: Research Foundation (Flanders)
Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium
NW Hendrickx, MLV Tagliaferri, M Kouwenhoven, R Li, DP Franke, ...
Physical Review B 99 (7), 075435, 2019
הרשאות: Netherlands Organisation for Scientific Research
Hard superconducting gap and diffusion-induced superconductors in Ge–Si nanowires
J Ridderbos, M Brauns, FK de Vries, J Shen, A Li, S Kölling, ...
Nano letters 20 (1), 122-130, 2019
הרשאות: Netherlands Organisation for Scientific Research, European Commission
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