| The polarity of GaN: a critical review ES Hellman Materials Research Society Internet Journal of Nitride Semiconductor …, 1998 | 449 | 1998 |
| Growth of high Tc superconducting thin films using molecular beam epitaxy techniques C Webb, SL Weng, JN Eckstein, N Missert, K Char, DG Schlom, ... Applied physics letters 51 (15), 1191-1193, 1987 | 177 | 1987 |
| Electron affinity at aluminum nitride surfaces CI Wu, A Kahn, ES Hellman, DNE Buchanan Applied physics letters 73 (10), 1346-1348, 1998 | 133 | 1998 |
| Growth of Ga-face and N-face GaN films using ZnO Substrates ES Hellman, DNE Buchanan, D Wiesmann, I Brener MRS Internet Journal of Nitride Semiconductor Research 1, 1-6, 1996 | 100 | 1996 |
| Molecular beam epitaxy of layered Dy‐Ba‐Cu‐O compounds DG Schlom, JN Eckstein, ES Hellman, SK Streiffer, JS Harris Jr, ... Applied physics letters 53 (17), 1660-1662, 1988 | 99 | 1988 |
| Infra-red transmission spectroscopy of GaAs during molecular beam epitaxy ES Hellman, JS Harris Jr Journal of Crystal Growth 81 (1-4), 38-42, 1987 | 97 | 1987 |
| Epitaxial Ba1−xKxBiO3 films on MgO: Nucleation, cracking, and critical currents ES Hellman, EH Hartford, EM Gyorgy Applied physics letters 58 (12), 1335-1337, 1991 | 78 | 1991 |
| Epitaxial Growth and Orientation of GaN on (1 0 0) g-LiAlO2 ES Hellman, Z Liliental-Weber, DNE Buchanan MRS Internet Journal of Nitride Semiconductor Research 2 (1), 32, 1997 | 77 | 1997 |
| All-high Tc Josephson tunnel junction: Ba1 - xKxBiO3/Ba1 - xKxBiO3 junctions AN Pargellis, F Sharifi, RC Dynes, B Miller, ES Hellman Applied physics letters 58 (1), 95-96, 1991 | 75 | 1991 |
| Electron tunneling in the high-T c bismuthate superconductors F Sharifi, A Pargellis, RC Dynes, B Miller, ES Hellman, J Rosamilia, ... Physical Review B 44 (22), 12521, 1991 | 64 | 1991 |
| Elastic scattering centers in resonant tunneling diodes E Wolak, KL Lear, PM Pitner, ES Hellman, BG Park, T Weil, JS Harris Jr, ... Applied physics letters 53 (3), 201-203, 1988 | 63 | 1988 |
| Molecular beam epitaxy of superconducting (Rb,Ba)BiO3 ES Hellman, EH Hartford, RM Fleming Applied physics letters 55 (20), 2120-2122, 1989 | 57 | 1989 |
| Penetration depth, microwave surface resistance, and gap ratio in NbN and Ba1−xKxBiO3 thin films MS Pambianchi, SM Anlage, ES Hellman, EH Hartford Jr, M Bruns, ... Applied physics letters 64 (2), 244-246, 1994 | 53 | 1994 |
| ScAlMgO4: an oxide substrate for GaN epitaxy ES Hellman, CD Brandle, LF Schneemeyer, D Wiesmann, I Brener, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1996 | 52 | 1996 |
| Normal-state resistivity and Hall effect in Ba 1− x K x BiO 3 epitaxial films ES Hellman, EH Hartford Jr Physical Review B 47 (17), 11346, 1993 | 47 | 1993 |
| Superconductor‐insulator‐superconductor tunneling in Ba1−xKxBiO3 grain boundaries A Kussmaul, ES Hellman, EH Hartford Jr, PM Tedrow Applied physics letters 63 (20), 2824-2826, 1993 | 44 | 1993 |
| Effects of oxygen on the sublimation of alkaline earths from effusion cells ES Hellman, EH Hartford Jr Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994 | 43 | 1994 |
| Nucleation of AlN on the (7× 7) Reconstructed Silicon (1 1 1) Surface ES Hellman, DNE Buchanan, CH Chen MRS Internet Journal of Nitride Semiconductor Research 3 (1), 43, 1998 | 42 | 1998 |
| Epitaxial growth of high‐temperature superconducting thin films JN Eckstein, DG Schlom, ES Hellman, KE Von Dessonneck, ZJ Chen, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1989 | 42 | 1989 |
| Article comprising heteroepitaxial III-V nitride semiconductor material on a substrate CD Brandle Jr, DN Buchanan, EH Hartford Jr, ES Hellman, ... US Patent 5,530,267, 1996 | 36 | 1996 |