Robert M. Wallace

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27 articoli

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Christopher HinkleUniversity of Notre Dame, Electrical EngineeringEmail verificata su nd.edu
Stephen McDonnellUniversity of VirginiaEmail verificata su virginia.edu
Rafik AddouOregon State UniversityEmail verificata su oregonstate.edu
Bruce GnadeSMUEmail verificata su smu.edu
Luigi ColomboUniversity of Texas at DallasEmail verificata su utdallas.edu
Eric M VogelHightower Professor of Materials Science and Engineering, Georgia Institute of TechnologyEmail verificata su mse.gatech.edu
Barry BrennanAtlantic Technological UniversityEmail verificata su atu.ie
Hong DongNankai UniversityEmail verificata su nankai.edu.cn
Rodney RuoffThe IBS CMCM, Dept. of Chemistry, Dept. of MS&ESchool of Energy and ChEng,Email verificata su unist.ac.kr
Manuel Quevedo-lopezUniversity of Texas at DallasEmail verificata su utdallas.edu
Francisco Servando Aguirre-TostadoCentro de Investigación en Materiales Avanzados, S.C., Unidad MonterreyEmail verificata su cimav.edu.mx
Cheng GongAssociate Professor, University of MarylandEmail verificata su umd.edu
Joshua A. RobinsonProf. MatSE; Center for 2DLM; ATOMIC; 2D Crystal Consort.; The Pennsylvania State UniversityEmail verificata su psu.edu
Santosh KCSan Diego State UniversityEmail verificata su sdsu.edu
pk hurleyTyndall National Institute, University College CorkEmail verificata su tyndall.ie
Dmitry ZhernokletovIntermolecular Inc.Email verificata su intermolecular.com
Lanxia ChengStaff Engineer_EMD ElectronicsEmail verificata su emdgroup.com
Chadwin D. YoungUniversity of Texas at DallasEmail verificata su utdallas.edu
Bongki LeeTechnology Development Engineer, GLOBALFOUNDRIESEmail verificata su globalfoundries.com
Chenxi ZhangUniversity of Texas at DallasEmail verificata su utdallas.edu

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Robert M. Wallace

University of Texas at Dallas

Email verificata su utdallas.edu - Home page

Electronic Materials Surfaces Interfaces


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
High-κ gate dielectrics: Current status and materials properties considerations GD Wilk, RM Wallace, JM Anthony Journal of applied physics 89 (10), 5243-5275, 2001	7790	2001
Carbon-based supercapacitors produced by activation of graphene Y Zhu, S Murali, MD Stoller, KJ Ganesh, W Cai, PJ Ferreira, A Pirkle, ... science 332 (6037), 1537-1541, 2011	6667	2011
Hafnium and zirconium silicates for advanced gate dielectrics GD Wilk, RM Wallace, JM Anthony Journal of Applied Physics 87 (1), 484-492, 2000	1369	2000
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 A Pirkle, J Chan, A Venugopal, D Hinojos, CW Magnuson, S McDonnell, ... Applied Physics Letters 99 (12), 2011	1151	2011
The role of oxygen during thermal reduction of graphene oxide studied by infrared absorption spectroscopy M Acik, G Lee, C Mattevi, A Pirkle, RM Wallace, M Chhowalla, K Cho, ... The Journal of Physical Chemistry C 115 (40), 19761-19781, 2011	1012	2011
Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors C Gong, H Zhang, W Wang, L Colombo, RM Wallace, K Cho Applied Physics Letters 103 (5), 2013	924	2013
Near-unity photoluminescence quantum yield in MoS₂ M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ... Science 350 (6264), 1065-1068, 2015	917	2015
Defect-Dominated Doping and Contact Resistance in MoS₂ S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle ACS nano 8 (3), 2880-2888, 2014	901	2014
Zirconium and/or hafnium oxynitride gate dielectric RM Wallace, RA Stoltz, GD Wilk US Patent 6,013,553, 2000	839	2000
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS₂ Interfaces C Gong, L Colombo, RM Wallace, K Cho Nano letters 14 (4), 1714-1720, 2014	804	2014
High-K materials and metal gates for CMOS applications J Robertson, RM Wallace Materials Science and Engineering: R: Reports 88, 1-41, 2015	784	2015
Two-dimensional gallium nitride realized via graphene encapsulation ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ... Nature materials 15 (11), 1166-1171, 2016	746	2016
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon GD Wilk, RM Wallace Applied Physics Letters 74 (19), 2854-2856, 1999	676	1999
MoS₂ P-type Transistors and Diodes Enabled by High Work Function MoO_x Contacts S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ... Nano letters 14 (3), 1337-1342, 2014	647	2014
Hole Selective MoO_x Contact for Silicon Solar Cells C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ... Nano letters 14 (2), 967-971, 2014	625	2014
GaAs interfacial self-cleaning by atomic layer deposition CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ... Applied Physics Letters 92 (7), 2008	492	2008
Manganese Doping of Monolayer MoS₂: The Substrate Is Critical K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ... Nano letters 15 (10), 6586-6591, 2015	461	2015
Highly Scalable, Atomically Thin WSe₂ Grown via Metal–Organic Chemical Vapor Deposition SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ... ACS nano 9 (2), 2080-2087, 2015	458	2015
First-principles study of metal–graphene interfaces C Gong, G Lee, B Shan, EM Vogel, RM Wallace, K Cho Journal of Applied Physics 108 (12), 2010	458	2010
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature Communications 6, 7311, 2015	454	2015

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