FinFET SRAM cell using low mobility plane for cell stability and method for forming DM Fried, RW Mann, KP Muller, EJ Nowak
US Patent 7,087,477, 2006
361 2006 Fluctuation limits & scaling opportunities for CMOS SRAM cells A Bhavnagarwala, S Kosonocky, C Radens, K Stawiasz, R Mann, Q Ye, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
214 2005 SRAM cell design for stability methodology C Wann, R Wong, DJ Frank, R Mann, SB Ko, P Croce, D Lea, D Hoyniak, ...
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005.(VLSI-TSA …, 2005
180 2005 Finfet SRAM cell using low mobility plane for cell stability and method for forming DM Fried, RW Mann, KP Muller, EJ Nowak
US Patent 6,967,351, 2005
154 2005 Reduction of the C54–TiSi2 phase transformation temperature using refractory metal ion implantation RW Mann, GL Miles, TA Knotts, DW Rakowski, LA Clevenger, JME Harper, ...
Applied physics letters 67 (25), 3729-3731, 1995
143 1995 Lateral ion implant straggle and mask proximity effect TB Hook, J Brown, P Cottrell, E Adler, D Hoyniak, J Johnson, R Mann
IEEE Transactions on Electron Devices 50 (9), 1946-1951, 2003
134 2003 Silicides and local interconnections for high-performance VLSI applications RW Mann, LA Clevenger, PD Agnello, FR White
IBM Journal of Research and Development 39 (4), 403-417, 1995
131 1995 Semiconductor integrated test structures for electron beam inspection of semiconductor wafers MC Sun, S Jansen, R Mann, OD Patterson
US Patent 7,679,083, 2010
124 2010 High performance and low power transistors integrated in 65nm bulk CMOS technology Z Luo, A Steegen, M Eller, R Mann, C Baiocco, P Nguyen, L Kim, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
106 2004 Enchanced multi-threshold (mtcmos) circuits using variable well bias SV Kosonocky, M Immediato, P Cottrell, T Hook, R Mann, J Brown
Proceedings of the 2001 international symposium on Low power electronics and …, 2001
98 2001 The C49 to C54 phase transformation in TiSi2 thin films RW Mann, LA Clevenger
Journal of The Electrochemical Society 141 (5), 1347, 1994
98 1994 Semiconductor structure incorporating thin film transistors with undoped cap oxide layers BA Chen, SB Kulkarni, JB Lasky, RW Mann, EJ Nowak, WA Rausch, ...
US Patent 5,675,185, 1997
96 1997 Sub-threshold circuit design with shrinking CMOS devices BH Calhoun, S Khanna, R Mann, J Wang
2009 IEEE International Symposium on Circuits and Systems, 2541-2544, 2009
89 2009 Kinetic analysis of C49‐TiSi2 and C54‐TiSi2 formation at rapid thermal annealing rates LA Clevenger, JME Harper, C Cabral Jr, C Nobili, G Ottaviani, R Mann
Journal of applied physics 72 (10), 4978-4980, 1992
87 1992 Low temperature formation of C Cabral Jr, LA Clevenger, JME Harper, FM d’Heurle, RA Roy, C Lavoie, ...
Applied physics letters 71 (24), 3531-3533, 1997
84 1997 Impact of circuit assist methods on margin and performance in 6T SRAM RW Mann, J Wang, S Nalam, S Khanna, G Braceras, H Pilo, BH Calhoun
Solid-State Electronics 54 (11), 1398-1407, 2010
74 2010 Borderless contact to diffusion with respect to gate conductor and methods for fabricating JA Bruce, JD Chapple-Sokol, CW Koburger III, MJ Lercel, RW Mann, ...
US Patent 6,498,096, 2002
68 2002 Grounded body SOI SRAM cell F Assaderaghi, A Bryant, PE Cottrell, RJ Gauthier Jr, RW Mann, EJ Nowak, ...
US Patent 6,646,305, 2003
66 2003 Ultralow-power SRAM technology RW Mann, WW Abadeer, MJ Breitwisch, O Bula, JS Brown, BC Colwill, ...
IBM Journal of Research and Development 47 (5.6), 553-566, 2003
65 2003 65nm CMOS technology for low power applications A Steegen, R Mo, R Mann, MC Sun, M Eller, G Leake, D Vietzke, A Tilke, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 64-67, 2005
64 2005 
Terence HookIBMEmail verificata su us.ibm.com