| Plasma deposition, treatment, and etching of polymers: the treatment and etching of polymers DL Flamm, O Auciello Elsevier, 2012 | 1131 | 2012 |
| Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas CJ Mogab, AC Adams, DL Flamm Journal of applied physics 49 (7), 3796-3803, 1978 | 829 | 1978 |
| Plasma etching: an introduction DM Manos, DL Flamm (No Title), 1989 | 817 | 1989 |
| The reaction of fluorine atoms with silicon DL Flamm, VM Donnelly, JA Mucha Journal of Applied Physics 52 (5), 3633-3639, 1981 | 506 | 1981 |
| The design of plasma etchants DL Flamm, VM Donnelly Plasma Chemistry and Plasma Processing 1, 317-363, 1981 | 488 | 1981 |
| How Langmuir probes work N Hershkowitz, O Auciello, DL Flamm Plasma diagnostics 1, 113-183, 1989 | 469 | 1989 |
| Plasma etching of Si and SiO2 in SF6–O2 mixtures R d’Agostino, DL Flamm Journal of Applied Physics 52 (1), 162-167, 1981 | 404 | 1981 |
| On the role of oxygen and hydrogen in diamond‐forming discharges JA Mucha, DL Flamm, DE Ibbotson Journal of applied physics 65 (9), 3448-3452, 1989 | 329 | 1989 |
| Anisotropic etching of SiO2 in low‐frequency CF4/O2 and NF3/Ar plasmas VM Donnelly, DL Flamm, WC Dautremont‐Smith, DJ Werder Journal of applied physics 55 (1), 242-252, 1984 | 298 | 1984 |
| Diamond crystal growth by plasma chemical vapor deposition CP Chang, DL Flamm, DE Ibbotson, JA Mucha Journal of Applied Physics 63 (5), 1744-1748, 1988 | 266 | 1988 |
| Basic chemistry and mechanisms of plasma etching DL Flamm, VM Donnelly, DE Ibbotson Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1983 | 251 | 1983 |
| Plasma Diagnostics: Discharge parameters and chemistry O Auciello, DL Flamm Academic Press, 2013 | 233 | 2013 |
| Hydrogen passivation of point defects in silicon JL Benton, CJ Doherty, SD Ferris, DL Flamm, LC Kimerling, HJ Leamy Applied Physics Letters 36 (8), 670-671, 1980 | 225 | 1980 |
| Plasma diagnostics N Hershkowitz, O Auciello, DL Flamm Discharge Parameters and Chemistry 1, 113, 1989 | 224 | 1989 |
| Computer simulation of a CF4 plasma etching silicon D Edelson, DL Flamm Journal of applied physics 56 (5), 1522-1531, 1984 | 217 | 1984 |
| Processes depending on plasma generation using a helical resonator DL Flamm, DE Ibbotson, WL Johnson US Patent 4,918,031, 1990 | 206 | 1990 |
| Etching techniques JM Cook, VM Donnelly, DL Flamm, DE Ibbotson, JA Mucha US Patent 4,498,953, 1985 | 194 | 1985 |
| Mechanisms of silicon etching in fluorine-and chlorine-containing plasmas DL Flamm Pure and Applied Chemistry 62 (9), 1709-1720, 1990 | 192 | 1990 |
| The plasma oxidation of CF4 in a tubular‐alumina fast‐flow reactor G Smolinsky, DL Flamm Journal of Applied Physics 50 (7), 4982-4987, 1979 | 186 | 1979 |
| Temperature dependence of InP and GaAs etching in a chlorine plasma VM Donnelly, DL Flamm, CW Tu, DE Ibbotson Journal of the Electrochemical Society 129 (11), 2533, 1982 | 185 | 1982 |
Orlando AucielloProfessor at University of Texas at DallasEmail verificata su utdallas.edu
