Articoli con mandati relativi all'accesso pubblico - Siegfried KargUlteriori informazioni
Non disponibili pubblicamente: 16
Full thermoelectric characterization of InAs nanowires using MEMS heater/sensors
SF Karg, V Troncale, U Drechsler, P Mensch, PD Kanungo, H Schmid, ...
Nanotechnology 25 (30), 305702, 2014
Mandati: European Commission
Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm
C Navarro, S Karg, C Marquez, S Navarro, C Convertino, C Zota, ...
Nature Electronics 2 (9), 412-419, 2019
Mandati: European Commission
One-dimensional behavior and high thermoelectric power factor in thin indium arsenide nanowires
P Mensch, S Karg, V Schmidt, B Gotsmann, H Schmid, H Riel
Applied Physics Letters 106 (9), 2015
Mandati: European Commission
Advanced design methods from materials and devices to circuits for brain-inspired oscillatory neural networks for edge computing
S Carapezzi, G Boschetto, C Delacour, E Corti, A Plews, A Nejim, S Karg, ...
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 11 (4 …, 2021
Mandati: European Commission
Multi-scale modeling and simulation flow for oscillatory neural networks for edge computing
S Carapezzi, C Delacour, G Boschetto, E Corti, M Abernot, A Nejim, T Gil, ...
2021 19th IEEE International New Circuits and Systems Conference (NEWCAS), 1-5, 2021
Mandati: European Commission
Towards InGaAs MSDRAM capacitor-less cells
C Navarro, S Navarro, C Marquez, C Sampedro, L Donetti, S Karg, H Riel, ...
ECS Transactions 85 (8), 195, 2018
Mandati: European Commission
Fabrication and analysis of vertical p-type InAs-Si nanowire Tunnel FETs
D Cutaia, KE Moselund, M Borg, H Schmid, L Gignac, CM Breslin, S Karg, ...
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
Mandati: European Commission
Insights Into the Dynamics of Coupled VO2 Oscillators for ONNs
J Núñez, JM Quintana, MJ Avedillo, M Jiménez, A Todri-Sanial, E Corti, ...
IEEE Transactions on Circuits and Systems II: Express Briefs 68 (10), 3356-3360, 2021
Mandati: European Commission, Government of Spain
Scaled III–V-on-Si transistors for low-power logic and memory applications
D Caimi, M Sousa, S Karg, CB Zota
Japanese Journal of Applied Physics 60 (SB), SB0801, 2021
Mandati: European Commission
Ballistic transport and high thermopower in one-dimensional InAs nanowires
S Karg, V Schaller, A Gaul, K Moselund, H Schmid, B Gotsmann, J Gooth, ...
2016 46th European Solid-State Device Research Conference (ESSDERC), 341-344, 2016
Mandati: European Commission
Solving optimization tasks power-efficiently exploiting VO2's phase-change properties with Oscillating Neural Networks
O Maher, N Harnack, G Indiveri, M Sousa, B Gotsmann, S Karg
2023 Device Research Conference (DRC), 1-2, 2023
Mandati: European Commission
Electro-thermal simulations of beyond-CMOS vanadium dioxide devices and oscillators
S Carapezzi, G Boschetto, S Karg, A Todri-Sanial
MRS Communications 12 (4), 427-433, 2022
Mandati: European Commission
Thermal scanning probe lithography (t-SPL) for nano-fabrication
H Wolf, YKR Cho, S Karg, P Mensch, C Schwemmer, A Knoll, M Spieser, ...
2019 Pan Pacific Microelectronics Symposium (Pan Pacific), 1-9, 2019
Mandati: Swiss National Science Foundation, European Commission
Frequency Injection Locking-Controlled Oscillations for Synchronized Operations in VO2 Crossbar Devices
E Corti, C Delacour, A Todri-Sanial, S Karg
2021 Device Research Conference (DRC), 1-2, 2021
Mandati: European Commission
Ultra-low power scaled III-V-on-Si 1T-DRAMs with quantum well heterostructures
C Convertino, L Vergano, L Czornomaz, CB Zota, S Karg
2020 Joint International EUROSOI Workshop and International Conference on …, 2020
Mandati: European Commission
Low-Frequency Noise in InGaAs-OI 1T-DRAMs
C Marquez, C Navarro, S Karg, R Ortega, C Zota, F Gamiz
2023 International Conference on Noise and Fluctuations (ICNF), 1-4, 2023
Mandati: European Commission
Disponibili pubblicamente: 25
Transition-metal-oxide-based resistance-change memories
SF Karg, GI Meijer, JG Bednorz, CT Rettner, AG Schrott, EA Joseph, ...
IBM Journal of Research and Development 52 (4.5), 481-492, 2008
Mandati: Swiss National Science Foundation
Ballistic one-dimensional InAs nanowire cross-junction interconnects
J Gooth, M Borg, H Schmid, V Schaller, S Wirths, K Moselund, M Luisier, ...
Nano letters 17 (4), 2596-2602, 2017
Mandati: European Commission
Scaled resistively-coupled VO2 oscillators for neuromorphic computing
E Corti, B Gotsmann, K Moselund, AM Ionescu, J Robertson, S Karg
Solid-State Electronics 168, 107729, 2020
Mandati: European Commission
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
D Cutaia, KE Moselund, M Borg, H Schmid, L Gignac, CM Breslin, S Karg, ...
IEEE Journal of the Electron Devices Society 3 (3), 176-183, 2015
Mandati: European Commission
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