| Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP pin photodiodes transferred on silicon P Chen, WV Chen, PKL Yu, CW Tang, KM Lau, L Mawst, C Paulson, ... Applied Physics Letters 94 (1), 2009 | 256 | 2009 |
| High-power (> 10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers A Al-Muhanna, LJ Mawst, D Botez, DZ Garbuzov, RU Martinelli, ... Applied Physics Letters 73 (9), 1182-1184, 1998 | 248 | 1998 |
| 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ... Applied Physics Letters 69 (11), 1532-1534, 1996 | 242 | 1996 |
| Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers N Tansu, NJ Kirsch, LJ Mawst Applied Physics Letters 81 (14), 2523-2525, 2002 | 199 | 2002 |
| Narrow spectral width high-power distributed feedback semiconductor lasers D Botez, TL Earles, LJ Mawst US Patent 6,195,381, 2001 | 198 | 2001 |
| High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers D Zhou, LJ Mawst IEEE Journal of Quantum Electronics 38 (12), 1599-1606, 2002 | 180 | 2002 |
| 73% CW power conversion efficiency at 50 W from 970 nm diode laser bars M Kanskar, T Earles, TJ Goodnough, E Stiers, D Botez, LJ Mawst Electronics Letters 41 (5), 245-247, 2005 | 179 | 2005 |
| High‐power, diffraction‐limited‐beam operation from phase‐locked diode‐laser arrays of closely spaced ‘‘leaky’’waveguides (antiguides) D Botez, L Mawst, P Hayashida, G Peterson, TJ Roth Applied physics letters 53 (6), 464-466, 1988 | 171 | 1988 |
| Quantum cascade laser on silicon A Spott, J Peters, ML Davenport, EJ Stanton, CD Merritt, WW Bewley, ... Optica 3 (5), 545-551, 2016 | 168 | 2016 |
| Current injection efficiency of InGaAsN quantum-well lasers N Tansu, LJ Mawst Journal of applied physics 97 (5), 2005 | 167 | 2005 |
| Phase-locked arrays of antiguides: model content and discrimination D Botez, LJ Mawst, GL Peterson, TJ Roth IEEE journal of quantum electronics 26 (3), 482-495, 1990 | 151 | 1990 |
| Low-threshold strain-compensated InGaAs (N)(/spl lambda/= 1.19-1.31 μm) quantum-well lasers N Tansu, LJ Mawst IEEE Photonics Technology Letters 14 (4), 444-446, 2002 | 136 | 2002 |
| Resonant optical transmission and coupling in phase‐locked diode laser arrays of antiguides: The resonant optical waveguide array D Botez, LJ Mawst, G Peterson, TJ Roth Applied physics letters 54 (22), 2183-2185, 1989 | 126 | 1989 |
| 66% CW wallplug efficiency from Al-free 0.98 µm-emitting diode lasers D Botez, LJ Mawst, A Bhattacharya, J Lopez, J Li, TF Kuech, VP Iakovlev, ... Electronics Letters 32 (21), 2012-2013, 1996 | 123 | 1996 |
| Temperature sensitivity of the electro-optical characteristics for mid-infrared (λ= 3–16 μm)-emitting quantum cascade lasers D Botez, CC Chang, LJ Mawst Journal of Physics D: Applied Physics 49 (4), 043001, 2015 | 117 | 2015 |
| Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm N Tansu, JY Yeh, LJ Mawst American Institute of Physics Inc, 2003 | 106 | 2003 |
| High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/= 1.17 μm) quantum well diode lasers N Tansu, LJ Mawst IEEE Photonics Technology Letters 13 (3), 179-181, 2001 | 104 | 2001 |
| Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers N Tansu, JY Yeh, LJ Mawst Applied physics letters 83 (13), 2512-2514, 2003 | 100 | 2003 |
| Temperature dependence of the key electro-optical characteristics for midinfrared emitting quantum cascade lasers D Botez, S Kumar, JC Shin, LJ Mawst, I Vurgaftman, JR Meyer Applied physics letters 97 (7), 2010 | 98 | 2010 |
| Watt‐range, coherent, uniphase powers from phase‐locked arrays of antiguided diode lasers D Botez, M Jansen, LJ Mawst, G Peterson, TJ Roth Applied physics letters 58 (19), 2070-2072, 1991 | 95 | 1991 |
D. BotezPhilip Dunham Reed Professor, University of Wisconsin-MadisonEmail verificata su engr.wisc.edu