| Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios Electron Devices, IEEE Transactions on 60 (7), 2224-2230, 2013 | 199 | 2013 |
| AlGaN/GaN high-electron-mobility transistors fabricated through a Au-Free technology HS Lee, DS Lee, T Palacios Electron Device Letters, IEEE 32 (5), 623-625, 2011 | 182 | 2011 |
| 3000-V 4.3-InAlN/GaN MOSHEMTs With AlGaN Back Barrier HS Lee, D Piedra, M Sun, X Gao, S Guo, T Palacios Electron Device Letters, IEEE 33 (7), 982-984, 2012 | 157 | 2012 |
| Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit WE Hoke, RV Chelakara, JP Bettencourt, TE Kazior, JR LaRoche, ... Journal of Vacuum Science & Technology B 30 (2), 02B101, 2012 | 109 | 2012 |
| Geometrical effects in high current gain 1100-V 4H-SiC BJTs M Domeij, HS Lee, E Danielsson, CM Zetterling, M Ostling, A Schoner Electron Device Letters, IEEE 26 (10), 743-745, 2005 | 78 | 2005 |
| 1200-V 5.2-mΩ· cm 2 4H-SiC BJTs with a high common-emitter current gain HS Lee, M Domeij, CM Zetterling, M Ostling, F Allerstam, ... Electron Device Letters, IEEE 28 (11), 1007-1009, 2007 | 76 | 2007 |
| Wafer-level heterogeneous integration of GaN HEMTs and Si (100) MOSFETs HS Lee, K Ryu, M Sun, T Palacios Electron Device Letters, IEEE 33 (2), 200-202, 2012 | 68 | 2012 |
| Ultrathin Strained-Ge Channel P-MOSFETs With High-/Metal Gate and Sub-1-nm Equivalent Oxide Thickness P Hashemi, W Chern, HS Lee, JT Teherani, Y Zhu, J Gonsalvez, ... Electron Device Letters, IEEE 33 (7), 943-945, 2012 | 60 | 2012 |
| High performance mixed signal and RF circuits enabled by the direct monolithic heterogeneous integration of GaN HEMTs and Si CMOS on a silicon substrate TE Kazior, R Chelakara, W Hoke, J Bettencourt, T Palacios, HS Lee Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE, 1-4, 2011 | 57 | 2011 |
| Fabrication of 2700-V 12-Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50 R Ghandi, HS Lee, M Domeij, B Buono, CM Zetterling, M Ostling Electron Device Letters, IEEE 29 (10), 1135-1137, 2008 | 54 | 2008 |
| AlGaN/AlN/GaN High-Electron-Mobility Transistors Fabricated with Au-Free Technology Z Liu, M Sun, HS Lee, M Heuken, T Palacios Applied Physics Express 6 (9), 096502, 2013 | 53 | 2013 |
| Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment T Fujishima, S Joglekar, D Piedra, HS Lee, Y Zhang, A Uedono, ... Applied Physics Letters 103 (8), 083508, 2013 | 52 | 2013 |
| Comparative breakdown study of mesa-and ion-implantation-isolated AlGaN/GaN high-electron-mobility transistors on Si substrate M Sun, HS Lee, B Lu, D Piedra, T Palacios Applied Physics Express 5 (7), 074202, 2012 | 52 | 2012 |
| Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors HS Lee, M Domeij, CM Zetterling, M Ostling, F Allerstam, ... Applied Physics Letters 92 (8), 082113-082113-3, 2008 | 42 | 2008 |
| High-current-gain SiC BJTs with regrown extrinsic base and etched JTE HS Lee, M Domeij, R Ghandi, CM Zetterling, M Ostling Electron Devices, IEEE Transactions on 55 (8), 1894-1898, 2008 | 30 | 2008 |
| 1200 V 4H-SiC BJTs with a common emitter current gain of 60 and low on-resistance HS Lee, M Domeij, CM Zetterling, R Ghandi, M Östling, F Allerstam, ... Materials Science Forum 600, 1151-1154, 2009 | 19 | 2009 |
| Low-forward-voltage-drop 4H-SiC BJTs without base contact implantation (vol 55, pg 1907, 2008) HS Lee, M Domeij, CM Zetterling, M Oestling IEEE TRANSACTIONS ON ELECTRON DEVICES 55 (9), 2531-2531, 2008 | 18* | 2008 |
| Low-forward-voltage-drop 4H-SiC BJTs without base contact implantation HS Lee, M Domeij, CM Zetterling, M Ostling Electron Devices, IEEE Transactions on 55 (8), 1907-1911, 2008 | 18 | 2008 |
| Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors HS Lee KTH, 2008 | 12 | 2008 |
| Current gain of 4H-SiC bipolar transistors including the effect of interface states M Domeij, E Danielsson, HS Lee, CM Zetterling, M Östling Materials Science Forum 483, 889-892, 2005 | 11 | 2005 |
Tomás PalaciosMITEmail verificata su mit.edu
