| Measuring the spin polarization of a metal with a superconducting point contact RJ Soulen Jr, JM Byers, MS Osofsky, B Nadgorny, T Ambrose, SF Cheng, ... science 282 (5386), 85-88, 1998 | 2263 | 1998 |
| Spin torque switching of perpendicular Ta∣ CoFeB∣ MgO-based magnetic tunnel junctions DC Worledge, G Hu, DW Abraham, JZ Sun, PL Trouilloud, J Nowak, ... Applied Physics Letters 98, 022501, 2011 | 845 | 2011 |
| Interface magnetism and spin wave scattering in ferromagnet-insulator-ferromagnet tunnel junctions JS Moodera, J Nowak, RJM van de Veerdonk Physical review letters 80 (13), 2941-2944, 1998 | 551 | 1998 |
| Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions CH Shang, J Nowak, R Jansen, JS Moodera Physical Review B 58 (6), 2917-2920, 1998 | 514 | 1998 |
| Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy M Gajek, JJ Nowak, JZ Sun, PL Trouilloud, EJ OSullivan, DW Abraham, ... Applied Physics Letters 100 (13), 132408-132408-3, 2012 | 358 | 2012 |
| Spin-polarized tunneling in a half-metallic ferromagnet CT Tanaka, J Nowak, JS Moodera Journal of applied physics 86 (11), 6239-6242, 1999 | 259 | 1999 |
| Geometrically enhanced magnetoresistance in ferromagnet–insulator–ferromagnet tunnel junctions JS Moodera, LR Kinder, J Nowak, P LeClair, R Meservey Applied physics letters 69 (5), 708-710, 1996 | 229 | 1996 |
| Optimum tunnel barrier in ferromagnetic–insulator–ferromagnetic tunneling structures JS Moodera, EF Gallagher, K Robinson, J Nowak Applied physics letters 70 (22), 3050-3050, 1997 | 224 | 1997 |
| Effect of subvolume excitation and spin-torque efficiency on magnetic switching JZ Sun, RP Robertazzi, J Nowak, PL Trouilloud, G Hu, DW Abraham, ... Physical Review B 84 (6), 064413, 2011 | 201 | 2011 |
| Dependence of voltage and size on write error rates in spin-transfer torque magnetic random-access memory JJ Nowak, RP Robertazzi, JZ Sun, G Hu, JH Park, JH Lee, AJ Annunziata, ... IEEE Magnetics Letters 7, 1-4, 2016 | 173 | 2016 |
| Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory JJ Nowak, RP Robertazzi, JZ Sun, G Hu, JH Park, JH Lee, AJ Annunziata, ... ieee magnetic letters, 2016 | 173 | 2016 |
| Spin dependent electron tunneling between ferromagnetic films J Nowak, J Raułuszkiewicz Journal of magnetism and magnetic materials 109 (1), 79-90, 1992 | 165 | 1992 |
| Tunnel junction device for storage and switching of signals JS Moodera, J Nowak, L Kinder, P LeClair US Patent 5,835,314, 1998 | 125 | 1998 |
| Spin-torque switching efficiency in CoFeB-MgO based tunnel junctions JZ Sun, SL Brown, W Chen, EA Delenia, MC Gaidis, J Harms, G Hu, ... Physical Review B—Condensed Matter and Materials Physics 88 (10), 104426, 2013 | 122 | 2013 |
| Current distribution effects in magnetoresistive tunnel junctions RJM Van de Veerdonk, J Nowak, R Meservey, JS Moodera, ... Applied physics letters 71 (19), 2839-2841, 1997 | 120 | 1997 |
| Quantum well states in spin-dependent tunnel structures JS Moodera, J Nowak, LR Kinder, PM Tedrow, RJM Van de Veerdonk, ... Physical review letters 83 (15), 3029, 1999 | 113 | 1999 |
| Spin vortex states and hysteretic properties of submicron size NiFe elements T Pokhil, D Song, J Nowak Journal of Applied Physics 87 (9), 6319-6321, 2000 | 110 | 2000 |
| Demonstration of ultralow bit error rates for spin-torque magnetic random-access memory with perpendicular magnetic anisotropy JJ Nowak, RP Robertazzi, JZ Sun, G Hu, DW Abraham, PL Trouilloud, ... IEEE Magnetics Letters 2, 3000204-3000204, 2011 | 107 | 2011 |
| STT-MRAM with double magnetic tunnel junctions G Hu, JH Lee, JJ Nowak, JZ Sun, J Harms, A Annunziata, S Brown, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.3. 1-26.3. 4, 2015 | 98 | 2015 |
| Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory G Hu, JJ Nowak, PL Troilloud, DC Worledge US Patent App. 13/093,287, 2012 | 96 | 2012 |