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Gregory DI PENDINA
Gregory DI PENDINA
Engineer - Researcher @ CNRS ; CEA-SPINTEC Lab
Email verificata su cea.fr
Titolo
Citata da
Citata da
Anno
Ultra-fast and high-reliability SOT-MRAM: From cache replacement to normally-off computing
G Prenat, K Jabeur, P Vanhauwaert, G Di Pendina, F Oboril, R Bishnoi, ...
IEEE Transactions on Multi-Scale Computing Systems 2 (1), 49-60, 2015
1992015
Spin Orbit Torque Non-Volatile Flip-Flop for High Speed and Low Energy Applications
K Jabeur, G Di Pendina, F Bernard-Granger, G Prenat
IEEE Electron Device Letter, 2014
1072014
Beyond STT-MRAM, spin orbit torque RAM SOT-MRAM for high speed and high reliability applications
G Prenat, K Jabeur, G Di Pendina, O Boulle, G Gaudin
Spintronics-based Computing, 145-157, 2015
802015
NON-VOLATILE MEMORY CELL
G DI PENDINA, G PRENAT
WO Patent 2014/170593 A1, 2013
462013
Compact modeling of a magnetic tunnel junction based on spin orbit torque
K Jabeur, G Di Pendina, G Prenat, LD Buda-Prejbeanu, B Dieny
IEEE transactions on magnetics 50 (7), 1-8, 2014
412014
Study of two writing schemes for a magnetic tunnel junction based on spin orbit torque
K Jabeur, LD Buda-Prejbeanu, G Prenat, G Di Pendina
International Journal of Electronics Science and Engineering, 501-507, 2013
322013
Comparison of Verilog‐A compact modelling strategies for spintronic devices
K Jabeur, F Bernard‐Granger, G Di Pendina, G Prenat, B Dieny
Electronics letters 50 (19), 1353-1355, 2014
292014
Non-volatile FPGAs based on spintronic devices
O Goncalves, G Prenat, G Di Pendina, B Dieny
Proceedings of the 50th Annual Design Automation Conference, 1-3, 2013
232013
Spintronics-based computing
G Prenat, K Jabeur, G Di Pendina, O Boulle, G Gaudin, W Zhao
Spin orbit torque RAM SOT-MRAM for high speed and high reliability …, 2015
212015
Compact model of a three-terminal MRAM device based on spin orbit torque switching
K Jabeur, G Prenat, G Di Pendina, LD Buda-Prejbeanu, IL Prejbeanu, ...
2013 International Semiconductor Conference Dresden-Grenoble (ISCDG), 1-4, 2013
212013
Design and evaluation of a 28-nm FD-SOI STT-MRAM for ultra-low power microcontrollers
G Patrigeon, P Benoit, L Torres, S Senni, G Prenat, G Di Pendina
IEEE Access 7, 58085-58093, 2019
182019
Ultra‐energy‐efficient CMOS/magnetic non‐volatile flip‐flop based on spin‐orbit torque device
K Jabeur, G Di Pendina, G Prenat
Electronics Letters 50 (8), 585-587, 2014
182014
Radiative effects on MRAM-based non-volatile elementary structures
J Lopes, G Di Pendina, E Zianbetov, E Beigne, L Torres
2015 IEEE Computer Society Annual Symposium on VLSI, 321-326, 2015
172015
Study of spin transfer torque (STT) and spin orbit torque (SOT) magnetic tunnel junctions (MTJS) at advanced CMOS technology nodes
K Jabeur, G Pendina, G Prenat
Electr. Electron. Eng. Int. J 6, 01-09, 2017
142017
Non-volatility for ultra-low power asynchronous circuits in hybrid cmos/magnetic technology
E Zianbetov, E Beigné, G Di Pendina
2015 21st IEEE International Symposium on Asynchronous Circuits and Systems …, 2015
142015
Cmos/stt-mram based ascon lwc: A power efficient hardware implementation
N Roussel, O Potin, G Di Pendina, JM Dutertre, JB Rigaud
2022 29th IEEE International Conference on Electronics, Circuits and Systems …, 2022
132022
A multifunctional standardized magnetic tunnel junction stack embedding sensor, memory and oscillator functionality
A Chavent, V Iurchuk, L Tillie, Y Bel, N Lamard, L Vila, U Ebels, RC Sousa, ...
Journal of Magnetism and Magnetic Materials 505, 166647, 2020
122020
A hybrid magnetic/complementary metal oxide semiconductor process design kit for the design of low-power non-volatile logic circuits
G Di Pendina, G Prenat, B Dieny, K Torki
Journal of Applied Physics 111 (7), 2012
122012
Non-volatile memory device
G Di Pendina, V Javerliac
US Patent 9,311,994, 2016
112016
Loadless volatile/non-volatile memory cell
G Prenat, G Di Pendina, K Torki
US Patent App. 13/980,555, 2014
102014
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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