| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 835 | 2006 |
| Improved efficiency of 255–280 nm AlGaN-based light-emitting diodes C Pernot, M Kim, S Fukahori, T Inazu, T Fujita, Y Nagasawa, A Hirano, ... Applied physics express 3 (6), 061004, 2010 | 336 | 2010 |
| Internal quantum efficiency of whole-composition-range AlGaN multiquantum wells K Ban, J Yamamoto, K Takeda, K Ide, M Iwaya, T Takeuchi, S Kamiyama, ... Applied physics express 4 (5), 052101, 2011 | 325 | 2011 |
| 350.9 nm UV laser diode grown on low-dislocation-density AlGaN K Iida, T Kawashima, A Miyazaki, H Kasugai, S Mishima, A Honshio, ... Japanese journal of applied physics 43 (4A), L499, 2004 | 204 | 2004 |
| Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions Y Kuwano, M Kaga, T Morita, K Yamashita, K Yagi, M Iwaya, T Takeuchi, ... Japanese Journal of Applied Physics 52 (8S), 08JK12, 2013 | 157 | 2013 |
| High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio M Imura, K Nakano, N Fujimoto, N Okada, K Balakrishnan, M Iwaya, ... Japanese journal of applied physics 45 (11R), 8639, 2006 | 142 | 2006 |
| Zirconium diboride (0001) as an electrically conductive lattice-matched substrate for gallium nitride H Kinoshita, S Otani, S Kamiyama, H Amano, I Akasaki, J Suda, ... Japanese Journal of Applied Physics 40 (12A), L1280, 2001 | 129 | 2001 |
| Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes C Pernot, S Fukahori, T Inazu, T Fujita, M Kim, Y Nagasawa, A Hirano, ... physica status solidi (a) 208 (7), 1594-1596, 2011 | 127 | 2011 |
| Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers M Imura, K Nakano, G Narita, N Fujimoto, N Okada, K Balakrishnan, ... Journal of crystal growth 298, 257-260, 2007 | 125 | 2007 |
| High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN M Iwaya, S Terao, T Sano, S Takanami, T Ukai, R Nakamura, ... physica status solidi (a) 188 (1), 117-120, 2001 | 123 | 2001 |
| Low-temperature-deposited AlGaN interlayer for improvement of AlGaN/GaN heterostructure S Kamiyama, M Iwaya, N Hayashi, T Takeuchi, H Amano, I Akasaki, ... Journal of crystal growth 223 (1-2), 83-91, 2001 | 121 | 2001 |
| Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0. 6Ga0. 4N/AlN/sapphire K Sato, S Yasue, K Yamada, S Tanaka, T Omori, S Ishizuka, S Teramura, ... Applied Physics Express 13 (3), 031004, 2020 | 120 | 2020 |
| Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy M Imura, K Nakano, N Fujimoto, N Okada, K Balakrishnan, M Iwaya, ... Japanese journal of applied physics 46 (4R), 1458, 2007 | 118 | 2007 |
| AlGaN-based deep ultraviolet light-emitting diodes fabricated on patterned sapphire substrates M Kim, T Fujita, S Fukahori, T Inazu, C Pernot, Y Nagasawa, A Hirano, ... Applied physics express 4 (9), 092102, 2011 | 111 | 2011 |
| Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC S Kamiyama, T Maeda, Y Nakamura, M Iwaya, H Amano, I Akasaki, ... Journal of applied physics 99 (9), 2006 | 110 | 2006 |
| GaInN-based solar cells using strained-layer GaInN/GaInN superlattice active layer on a freestanding GaN substrate Y Kuwahara, T Fujii, T Sugiyama, D Iida, Y Isobe, Y Fujiyama, Y Morita, ... Applied physics express 4 (2), 021001, 2011 | 105 | 2011 |
| Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors K Ikeyama, Y Kozuka, K Matsui, S Yoshida, T Akagi, Y Akatsuka, N Koide, ... Applied Physics Express 9 (10), 102101, 2016 | 103 | 2016 |
| Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy M Imura, K Nakano, T Kitano, N Fujimoto, G Narita, N Okada, ... Applied physics letters 89 (22), 2006 | 98 | 2006 |
| Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification N Okada, N Kato, S Sato, T Sumii, T Nagai, N Fujimoto, M Imura, ... Journal of crystal growth 298, 349-353, 2007 | 92 | 2007 |
| Recombination dynamics of localized excitons in Al1− xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy T Onuma, SF Chichibu, Y Uchinuma, T Sota, S Yamaguchi, S Kamiyama, ... Journal of applied physics 94 (4), 2449-2453, 2003 | 91 | 2003 |
Motoaki IwayaMeijo UniversityEmail verificata su meijo-u.ac.jp
