Non-Volatile Ferroelectric FETs Using 5-nm Hf0.5 Zr0.5 O2 With High Data Retention and Read Endurance for 1T Memory Applications KT Chen, HY Chen, CY Liao, GY Siang, C Lo, MH Liao, KS Li, ST Chang, ...
IEEE Electron Device Letters 40 (3), 399-402, 2019
96 2019 Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode KT Chen, CY Liao, C Lo, HY Chen, GY Siang, S Liu, SC Chang, MH Liao, ...
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 62-64, 2019
22 2019 Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf0.25 Zr0.75 O2 Negative … MH Lee, KT Chen, CY Liao, GY Siang, C Lo, HY Chen, YJ Tseng, ...
2019 IEEE International Electron Devices Meeting (IEDM), 23.6. 1-23.6. 4, 2019
20 2019 High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hfx 1-x O2 C Lo, CK Chen, CF Chang, FS Zhang, ZH Lu, TS Chao
IEEE Electron Device Letters 43 (2), 224-227, 2021
17 2021 Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance) KT Chen, SS Gu, ZY Wang, CY Liao, YC Chou, RC Hong, SY Chen, ...
IEEE Journal of the Electron Devices Society 6, 900-904, 2018
17 2018 Ferroelectric HfZrO2 FETs for steep switch onset KT Chen, CY Liao, HY Chen, C Lo, GY Siang, YY Lin, YJ Tseng, C Chang, ...
Microelectronic Engineering 215, 110991, 2019
8 2019 Evaluation of sweep modes for switch response on ferroelectric negative-capacitance FETs KT Chen, YC Chou, GY Siang, HY Chen, C Lo, CY Liao, ST Chang, ...
Applied Physics Express 12 (7), 071003, 2019
7 2019 Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory KT Chen, C Lo, YY Lin, CY Chueh, C Chang, GY Siang, YJ Tseng, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020
3 2020 Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric Hfx Zr1-x O2 FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying … C Lo, SC Chang, KT Lin, CK Chen, CF Chang, FS Zhang, ZH Lu, TS Chao
IEEE Electron Device Letters 44 (6), 883-886, 2023
2 2023 Antiferroelectric Hf0. 25Zr0. 75O2With Ferroelectric Properties and Low Voltage Operation of AFeRAM and AFeFET by Using Low-Temperature Atomic Layer Deposition KT Lin, C Lo, SC Chang, HT Tsai, TS Chao
IEEE Transactions on Electron Devices 71 (2), 1072-1077, 2024
2024 Antiferroelectric Hf KT Lin, C Lo, SC Chang, HT Tsai, TS Chao
IEEE Transactions on Electron Devices, 2024
2024 利用 I-line 微影及相關製程技術開發奈米級 Ω 型金氧半場效電晶體和無接面式電晶體 樂杰
臺灣師範大學光電科技研究所學位論文 2019, 1-67, 2019
2019 