| Slow-light optical buffers: capabilities and fundamental limitations RS Tucker, PC Ku, CJ Chang-Hasnain Journal of lightwave technology 23 (12), 4046, 2005 | 621 | 2005 |
| Monolithically integrated μLEDs on silicon neural probes for high-resolution optogenetic studies in behaving animals F Wu, E Stark, PC Ku, KD Wise, G Buzsáki, E Yoon Neuron 88 (6), 1136-1148, 2015 | 455 | 2015 |
| Variable optical buffer using slow light in semiconductor nanostructures CJ Chang-Hasnain, P Ku, J Kim, S Chuang Proceedings of the IEEE 91 (11), 1884-1897, 2003 | 423 | 2003 |
| Slow light in semiconductor quantum wells PC Ku, F Sedgwick, CJ Chang-Hasnain, P Palinginis, T Li, H Wang, ... Optics Letters 29 (19), 2291-2293, 2004 | 400 | 2004 |
| Slow light using semiconductor quantum dots J Kim, SL Chuang, PC Ku, CJ Chang-Hasnain Journal of Physics: Condensed Matter 16 (35), S3727, 2004 | 146 | 2004 |
| Observation of the Crab Nebula with LHAASO-KM2A− a performance study F Aharonian, Q An, LX Bai, YX Bai, YW Bao, D Bastieri, XJ Bi, YJ Bi, H Cai, ... Chinese Physics C 45 (2), 025002, 2021 | 139 | 2021 |
| Variable semiconductor all-optical buffer PC Ku, CJ Chang-Hasnain, SL Chuang Electronics Letters 38 (24), 1, 2002 | 131 | 2002 |
| Delay-bandwidth product and storage density in slow-light optical buffers RS Tucker, PC Ku, CJ Chang-Hasnain Electronics Letters 41 (4), 1, 2005 | 88 | 2005 |
| Impact of carrier localization on recombination in InGaN quantum wells and the efficiency of nitride light-emitting diodes: Insights from theory and numerical simulations CM Jones, CH Teng, Q Yan, PC Ku, E Kioupakis Applied Physics Letters 111 (11), 2017 | 80 | 2017 |
| Photoluminescence study of semipolar {101¯ 1} InGaN∕ GaN multiple quantum wells grown by selective area epitaxy H Yu, LK Lee, T Jung, PC Ku Applied Physics Letters 90 (14), 2007 | 78 | 2007 |
| Single photon emission from site-controlled InGaN/GaN quantum dots L Zhang, CH Teng, TA Hill, LK Lee, PC Ku, H Deng Applied Physics Letters 103 (19), 2013 | 73 | 2013 |
| Monolithic integration of individually addressable light-emitting diode color pixels K Chung, J Sui, B Demory, CH Teng, PC Ku Applied Physics Letters 110 (11), 2017 | 70 | 2017 |
| Slow light in semiconductor heterostructures PC Ku, CJ Chang-Hasnain, SL Chuang Journal of Physics D: Applied Physics 40 (5), R93, 2007 | 62 | 2007 |
| Slow light using excitonic population oscillation SW Chang, SL Chuang, PC Ku, CJ Chang-Hasnian, P Palinginis, H Wang Physical Review B—Condensed Matter and Materials Physics 70 (23), 235333, 2004 | 61 | 2004 |
| Handbook of GaN semiconductor materials and devices WW Bi, HH Kuo, P Ku, B Shen CRC Press, 2017 | 56 | 2017 |
| Radiation hardness qualification of PbWO4 scintillation crystals for the CMS Electromagnetic Calorimeter P Adzic, N Almeida, D Andelin, I Anicin, Z Antunovic, R Arcidiacono, ... Journal of instrumentation 5 (03), P03010, 2010 | 49 | 2010 |
| Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering K Chung, J Sui, B Demory, PC Ku Applied Physics Letters 111 (4), 2017 | 48 | 2017 |
| How much better are InGaN/GaN nanodisks than quantum wells—Oscillator strength enhancement and changes in optical properties L Zhang, LK Lee, CH Teng, TA Hill, PC Ku, H Deng Applied Physics Letters 104 (5), 2014 | 48 | 2014 |
| Wavelength tunable InGaN/GaN nano-ring LEDs via nano-sphere lithography SW Wang, KB Hong, YL Tsai, CH Teng, AJ Tzou, YC Chu, PT Lee, PC Ku, ... Scientific reports 7 (1), 42962, 2017 | 47 | 2017 |
| Integrated parabolic nanolenses on MicroLED color pixels B Demory, K Chung, A Katcher, J Sui, H Deng, PC Ku Nanotechnology 29 (16), 165201, 2018 | 45 | 2018 |
