Apparatus for taking measurements in the ear B Kraus, E Kahler, A Klös, H Mannebach
US Patent 6,358,216, 2002
146 2002 Compact model for short-channel junctionless accumulation mode double gate MOSFETs T Holtij, M Graef, FM Hain, A Kloes, B Iñíguez
IEEE Transactions on Electron Devices 61 (2), 288-299, 2013
105 2013 A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling A Kloes, A Kostka
Solid-State Electronics 39 (12), 1761-1775, 1996
85 1996 Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region T Holtij, M Schwarz, A Kloes, B Iniguez
Solid-state electronics 90, 107-115, 2013
61 2013 Organic bipolar transistors SJ Wang, M Sawatzki, G Darbandy, F Talnack, J Vahland, M Malfois, ...
Nature 606 (7915), 700-705, 2022
58 2022 Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for A Kloes, M Weidemann, D Goebel, BT Bosworth
IEEE transactions on electron devices 55 (12), 3467-3475, 2008
58 2008 2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage T Holtij, M Schwarz, A Kloes, B Iñíguez
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
45 2012 Efficient and low-voltage vertical organic permeable base light-emitting transistors Z Wu, Y Liu, E Guo, G Darbandy, SJ Wang, R Hübner, A Kloes, ...
Nature Materials 20 (7), 1007-1014, 2021
43 2021 MOS3: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs A Kloes, M Schwarz, T Holtij
IEEE Transactions on Electron Devices 59 (2), 349, 2012
42 2012 2-D physics-based compact DC modeling of double-gate tunnel-FETs F Horst, A Farokhnejad, QT Zhao, B Iniguez, A Kloes
IEEE Transactions on Electron Devices 66 (1), 132-138, 2018
37 2018 On the physical behavior of cryogenic IV and III–V Schottky barrier MOSFET devices M Schwarz, LE Calvet, JP Snyder, T Krauss, U Schwalke, A Kloes
IEEE Transactions on Electron Devices 64 (9), 3808-3815, 2017
36 2017 A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current M Graef, T Holtij, F Hain, A Kloes, B Iniguez
Microelectronics Journal 45 (9), 1144-1153, 2014
36 2014 Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs M Schwarz, T Holtij, A Kloes, B Iniguez
Solid-State Electronics 69, 72-84, 2012
35 2012 Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation F Hain, M Graef, B Iñíguez, A Kloes
Solid-State Electronics 133, 17-24, 2017
33 2017 Hair-removing device B Kraus, A Klos
US Patent 8,627,573, 2014
33 2014 Vertical organic permeable dual-base transistors for logic circuits E Guo, Z Wu, G Darbandy, S Xing, SJ Wang, A Tahn, M Göbel, A Kloes, ...
Nature Communications 11 (1), 4725, 2020
32 2020 2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET M Schwarz, M Weidemann, A Kloes, B Iñíguez
Solid-State Electronics 54 (11), 1372-1380, 2010
32 2010 Drive mechanism for oscillating electric products of personal use, particularly dry shavers T Brum, A Klös, H Port, W Port, U Schaaf
US Patent 6,441,517, 2002
32 2002 Drive mechanisms for small electric appliances B Kraus, A Klös
US Patent 6,933,630, 2005
30 2005 Infrared thermometer with heatable probe tip and protective cover B Kraus, A Klös, E Kahler, F Beerwerth, H Mannebach
US Patent 6,694,174, 2004
27 2004 
Mike SchwarzNanoP, THM - University of Applied SciencesEmail verificata su ei.thm.de