| A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit JS Kauppila, AL Sternberg, ML Alles, AM Francis, J Holmes, OA Amusan, ... IEEE Transactions on nuclear Science 56 (6), 3152-3157, 2009 | 199 | 2009 |
| A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications RR Lamichhane, N Ericsson, S Frank, C Britton, L Marlino, A Mantooth, ... 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 64 | 2014 |
| Complex high-temperature CMOS silicon carbide digital circuit designs N Kuhns, L Caley, A Rahman, S Ahmed, J Di, HA Mantooth, AM Francis, ... IEEE Transactions on Device and Materials Reliability 16 (2), 105-111, 2016 | 58 | 2016 |
| A 4H silicon carbide gate buffer for integrated power systems N Ericson, S Frank, C Britton, L Marlino, SH Ryu, D Grider, A Mantooth, ... IEEE transactions on power electronics 29 (2), 539-542, 2013 | 53 | 2013 |
| High-temperature SiC CMOS comparator and op-amp for protection circuits in voltage regulators and switch-mode converters A Rahman, S Roy, R Murphree, R Kotecha, K Addington, A Abbasi, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 935-945, 2016 | 48 | 2016 |
| An integrated SiC CMOS gate driver for power module integration M Barlow, S Ahmed, AM Francis, HA Mantooth IEEE Transactions on Power Electronics 34 (11), 11191-11198, 2019 | 46 | 2019 |
| A family of CMOS analog and mixed signal circuits in SiC for high temperature electronics A Rahman, PD Shepherd, SA Bhuyan, S Ahmed, SK Akula, L Caley, ... 2015 IEEE Aerospace Conference, 1-10, 2015 | 43 | 2015 |
| High-temperature SiC power module with integrated SiC gate drivers for future high-density power electronics applications B Whitaker, Z Cole, B Passmore, D Martin, T McNutt, A Lostetter, ... 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 36-40, 2014 | 41 | 2014 |
| High-temperature voltage and current references in silicon carbide CMOS A Rahman, AM Francis, S Ahmed, SK Akula, J Holmes, A Mantooth IEEE Transactions on Electron Devices 63 (6), 2455-2461, 2016 | 39 | 2016 |
| An integrated SiC CMOS gate driver M Barlow, S Ahmed, HA Mantooth, AM Francis 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 1646-1649, 2016 | 39 | 2016 |
| High temperature data converters in silicon carbide CMOS A Rahman, L Caley, S Roy, N Kuhns, A Mantooth, J Di, AM Francis, ... IEEE Transactions on Electron Devices 64 (4), 1426-1432, 2017 | 33 | 2017 |
| Paragon-A mixed-signal behavioral modeling environment V Chaudhary, M Francis, X Huang, HA Mantooth IEEE 2002 International Conference on Communications, Circuits and Systems …, 2002 | 32 | 2002 |
| A SiC CMOS digitally controlled PWM generator for high-temperature applications S Roy, RC Murphree, A Abbasi, A Rahman, S Ahmed, JA Gattis, ... IEEE Transactions on Industrial Electronics 64 (10), 8364-8372, 2017 | 31 | 2017 |
| Multi-objective layout optimization for multi-chip power modules considering electrical parasitics and thermal performance BW Shook, A Nizam, Z Gong, AM Francis, HA Mantooth 2013 IEEE 14th Workshop on Control and Modeling for Power Electronics …, 2013 | 30 | 2013 |
| Significance of strike model in circuit-level prediction of charge sharing upsets AM Francis, D Dimitrov, J Kauppila, A Sternberg, M Alles, J Holmes, ... IEEE Transactions on Nuclear Science 56 (6), 3109-3114, 2009 | 30 | 2009 |
| A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices S Perez, RM Kotecha, AU Rashid, MM Hossain, T Vrotsos, AM Francis, ... IEEE Transactions on Power Electronics 34 (9), 8329-8341, 2018 | 28 | 2018 |
| Efficient modeling of single event transients directly in compact device models AM Francis, M Turowski, JA Holmes, HA Mantooth 2007 IEEE International Behavioral Modeling and Simulation Workshop, 73-77, 2007 | 28 | 2007 |
| A SiC CMOS linear voltage regulator for high-temperature applications RC Murphree, S Roy, S Ahmed, M Barlow, A Rahman, AM Francis, ... IEEE Transactions on Power Electronics 35 (1), 913-923, 2019 | 26 | 2019 |
| A sic 8 bit dac at 400 c A Rahman, S Roy, RC Murphree, HA Mantooth, AM Francis, J Holmes 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 26 | 2015 |
| A UVLO circuit in SiC compatible with power MOSFET integration MD Glover, P Shepherd, AM Francis, M Mudholkar, HA Mantooth, ... IEEE Journal of Emerging and Selected Topics in Power Electronics 2 (3), 425-433, 2014 | 26 | 2014 |
Shamim AhmedStaff Engineer at Qualcomm Inc.Email verificata su uark.edu