Martin Stutzmann

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Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgEmail verificata su inatech.uni-freiburg.de
Martin S. Brandtapl. Professor für Experimentalphysik, Walter Schottky Institut, Technische Universität MünchenEmail verificata su wsi.tum.de
Martin EickhoffInstitut für Festkörperphysik, Universität BremenEmail verificata su ifp.uni-bremen.de
Jose A. GarridoICN2 - Catalan Institute of Nanoscience and Nanotechnology & ICREAEmail verificata su icn2.cat
Roman DimitrovFinisarEmail verificata su finisar.com
Hartmut WiggersUniversity of Duisburg-EssenEmail verificata su uni-due.de
James R. ShealyCornell UniversityEmail verificata su ece.cornell.edu
Josef Gerhard MüllerMunich University of Applied SciencesEmail verificata su hm.edu
WARREN B JACKSONPrincipal ScientistEmail verificata su parc.com
Carlos F. O. Graeff FRSC (ORCID:000...Professor Titular do DFM-FC, Universidade Estadual Paulista-UNESPEmail verificata su unesp.br
Nils WeimannUniversity of Duisburg-EssenEmail verificata su uni-due.de
Hans HüblWalther-Meissner-Institut, Bayerische Akademie der WissenschaftenEmail verificata su wmi.badw.de
David BiegelsenXerox Palo Alto Research CenterEmail verificata su parc.com
Martin AlbrechtLeibniz-Institut für KristallzüchtungEmail verificata su ikz-berlin.de
Oliver WilliamsCardiff School of Physics and Astronomy, Cardiff UniversityEmail verificata su cardiff.ac.uk
Manuel CardonaMax Planck InstitutEmail verificata su fkf.mpg.de
Felix HoehneWalter-Schottky Institut, TU MünchenEmail verificata su wsi.tum.de
Gyorgy CsabaPázmány Péter Catholic University, formerly University of Notre DameEmail verificata su itk.ppke.hu
Gema Martínez CriadoEuropean Synchrotron Radiation FacilityEmail verificata su esrf.fr
Jordi ArbiolICREA and Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BISTEmail verificata su icrea.cat

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Martin Stutzmann

Professor (retired) of Experimental Physics, Walter Schottky Institut, TU München

Email verificata su tum.de - Home page

Semiconductor Physics


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999	3754	1999
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000	2138	2000
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study M Stutzmann, WB Jackson, CC Tsai Physical Review B 32 (1), 23, 1985	1572	1985
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1415	2002
The origin of visible luminescencefrom “porous silicon”: A new interpretation MS Brandt, HD Fuchs, M Stutzmann, J Weber, M Cardona Solid State Communications 81 (4), 307-312, 1992	1124*	1992
Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997	800	1997
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998	737	1998
Protein-modified nanocrystalline diamond thin films for biosensor applications A Härtl, E Schmich, JA Garrido, J Hernando, SCR Catharino, S Walter, ... Nature materials 3 (10), 736-742, 2004	648	2004
Black nonreflecting silicon surfaces for solar cells S Koynov, MS Brandt, M Stutzmann Applied physics letters 88 (20), 2006	585	2006
The defect density in amorphous silicon M Stutzmann Philosophical Magazine B 60 (4), 531-546, 1989	448	1989
Determination of the Al mole fraction and the band gap bowing of epitaxial films H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ... Applied Physics Letters 71 (11), 1504-1506, 1997	424	1997
Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ... Japanese journal of applied physics 38 (3A), L217, 1999	420	1999
Chemical control of the charge state of nitrogen-vacancy centers in diamond MV Hauf, B Grotz, B Naydenov, M Dankerl, S Pezzagna, J Meijer, ... Physical Review B—Condensed Matter and Materials Physics 83 (8), 081304, 2011	411	2011
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996	387	1996
Detailed investigation of doping in hydrogenated amorphous silicon and germanium M Stutzmann, DK Biegelsen, RA Street Physical Review B 35 (11), 5666, 1987	369	1987
Sound velocity of thin films obtained by surface acoustic-wave measurements C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ... Applied Physics Letters 72 (19), 2400-2402, 1998	368	1998
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors G Steinhoff, M Hermann, WJ Schaff, LF Eastman, M Stutzmann, M Eickhoff Applied Physics Letters 83 (1), 177-179, 2003	367	2003
Electronic properties of semiconducting FeSi₂ films CA Dimitriadis, JH Werner, S Logothetidis, M Stutzmann, J Weber, ... Journal of applied physics 68 (4), 1726-1734, 1990	321	1990
Optical process for liftoff of group III-nitride films MK Kelly, O Ambacher, R Dimitrov, R Handschuh, M Stutzmann Physica Status Solidi A (Applied Research) 159, 1997	302	1997
Graphene transistor arrays for recording action potentials from electrogenic cells LH Hess, M Jansen, V Maybeck, MV Hauf, M Seifert, M Stutzmann, ... Advanced Materials 23 (43), 5045, 2011	299	2011

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