An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulation T Suemitsu, T Enoki, N Sano, M Tomizawa, Y Ishii
IEEE Transactions on Electron Devices 45 (12), 2390-2399, 1998
152 1998 Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Y Kurita, G Ducournau, D Coquillat, A Satou, K Kobayashi, ...
Applied Physics Letters 104 (25), 2014
150 2014 30-nm two-step recess gate InP-based InAlAs/InGaAs HEMTs T Suemitsu, H Yokoyama, T Ishii, T Enoki, G Meneghesso, E Zanoni
IEEE Transactions on Electron devices 49 (10), 1694-1700, 2002
111 2002 Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems T Otsuji, YM Meziani, T Nishimura, T Suemitsu, W Knap, E Sano, T Asano, ...
Journal of Physics: Condensed Matter 20 (38), 384206, 2008
101 2008 Optical study of high-biased AlGaN/GaN high-electron-mobility transistors N Shigekawa, K Shiojima, T Suemitsu
Journal of applied physics 92 (1), 531-535, 2002
99 2002 High-performance 0.1-/spl mu/m gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology T Suemitsu, H Yokoyama, Y Umeda, T Enoki, Y Ishii
IEEE Transactions on Electron Devices 46 (6), 1074-1080, 1999
86 1999 Improved recessed-gate structure for sub-0.1-µm-gate InP-based high electron mobility transistors TST Suemitsu, TET Enoki, HYH Yokoyama, YIY Ishii
Japanese journal of applied physics 37 (3S), 1365, 1998
80 1998 30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency TST Suemitsu, TIT Ishii, HYH Yokoyama, TET Enoki, YIY Ishii, ...
Japanese journal of applied physics 38 (2B), L154, 1999
78 1999 Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors N Shigekawa, K Shiojima, T Suemitsu
Applied Physics Letters 79 (8), 1196-1198, 2001
73 2001 Current-driven detection of terahertz radiation using a dual-grating-gate plasmonic detector S Boubanga-Tombet, Y Tanimoto, A Satou, T Suemitsu, Y Wang, ...
Applied Physics Letters 104 (26), 2014
58 2014 Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures T Otsuji, H Karasawa, T Watanabe, T Suemitsu, M Suemitsu, E Sano, ...
Comptes Rendus Physique 11 (7-8), 421-432, 2010
58 2010 Correlation between current–voltage characteristics and dislocations for n -GaN Schottky contacts K Shiojima, T Suemitsu, M Ogura
Applied Physics Letters 78 (23), 3636-3638, 2001
58 2001 Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications H Fukidome, R Takahashi, S Abe, K Imaizumi, H Handa, HC Kang, ...
Journal of Materials Chemistry 21 (43), 17242-17248, 2011
50 2011 Electrical characteristic of AlGaN/GaN high-electron-mobility transistors with recess gate structure NM Shrestha, Y Li, T Suemitsu, S Samukawa
IEEE Transactions on Electron Devices 66 (4), 1694-1698, 2019
47 2019 30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates T Suemitsu, T Ishii, H Yokoyama, Y Umeda, T Enoki, Y Ishii, T Tamamura
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
46 1998 Room temperature logic inverter on epitaxial graphene-on-silicon device A El Moutaouakil, HC Kang, H Handa, H Fukidome, T Suemitsu, E Sano, ...
Japanese journal of applied physics 50 (7R), 070113, 2011
41 2011 Fast and sensitive terahertz detection with a current-driven epitaxial-graphene asymmetric dual-grating-gate field-effect transistor structure K Tamura, C Tang, D Ogiura, K Suwa, H Fukidome, Y Takida, H Minamide, ...
APL Photonics 7 (12), 2022
38 2022 Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on K Shiojima, T Suemitsu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
36 2003 Epitaxial graphene top-gate FETs on silicon substrates HC Kang, H Karasawa, Y Miyamoto, H Handa, H Fukidome, T Suemitsu, ...
Solid-State Electronics 54 (10), 1071-1075, 2010
35 2010 An intrinsic delay extraction method for Schottky gate field effect transistors T Suemitsu
IEEE electron device letters 25 (10), 669-671, 2004
34 2004