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Raphaël Butté
Raphaël Butté
Senior scientist, Institute of Physics, EPFL, Switzerland
Email verificata su epfl.ch - Home page
Titolo
Citata da
Citata da
Anno
Room-temperature polariton lasing in semiconductor microcavities
S Christopoulos, GBH Von Högersthal, AJD Grundy, PG Lagoudakis, ...
Physical review letters 98 (12), 126405, 2007
12172007
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
R Butté, JF Carlin, E Feltin, M Gonschorek, S Nicolay, G Christmann, ...
Journal of Physics D: Applied Physics 40 (20), 6328, 2007
4132007
Room temperature polariton lasing in a GaN∕ AlGaN multiple quantum well microcavity
G Christmann, R Butté, E Feltin, JF Carlin, N Grandjean
Applied Physics Letters 93 (5), 2008
3772008
Spontaneous polarization buildup in a room-temperature polariton laser
JJ Baumberg, AV Kavokin, S Christopoulos, AJD Grundy, R Butté, ...
Physical Review Letters 101 (13), 136409, 2008
2942008
Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
JF Carlin, C Zellweger, J Dorsaz, S Nicolay, G Christmann, E Feltin, ...
physica status solidi (b) 242 (11), 2326-2344, 2005
1952005
Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field
L Mancini, N Amirifar, D Shinde, I Blum, M Gilbert, A Vella, F Vurpillot, ...
The Journal of Physical Chemistry C 118 (41), 24136-24151, 2014
1672014
Polariton lasing in a hybrid bulk ZnO microcavity
T Guillet, M Mexis, J Levrat, G Rossbach, C Brimont, T Bretagnon, B Gil, ...
Applied Physics Letters 99 (16), 2011
1512011
Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities
R Butté, G Delalleau, AI Tartakovskii, MS Skolnick, VN Astratov, ...
Physical Review B 65 (20), 205310, 2002
1402002
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
C Haller, JF Carlin, G Jacopin, D Martin, R Butté, N Grandjean
Applied Physics Letters 111 (26), 2017
1382017
Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕ GaN Bragg mirrors
JF Carlin, J Dorsaz, E Feltin, R Butté, N Grandjean, M Ilegems, M Laügt
Applied Physics Letters 86 (3), 2005
1352005
Room-temperature polariton luminescence from a bulk GaN microcavity
R Butté, G Christmann, E Feltin, JF Carlin, M Mosca, M Ilegems, ...
Physical Review B—Condensed Matter and Materials Physics 73 (3), 033315, 2006
1292006
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
C Haller, JF Carlin, G Jacopin, W Liu, D Martin, R Butté, N Grandjean
Applied Physics Letters 113 (11), 2018
1232018
Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory
J Levrat, R Butté, E Feltin, JF Carlin, N Grandjean, D Solnyshkov, ...
Physical Review B—Condensed Matter and Materials Physics 81 (12), 125305, 2010
1222010
Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime
G Christmann, R Butté, E Feltin, A Mouti, PA Stadelmann, A Castiglia, ...
Physical Review B—Condensed Matter and Materials Physics 77 (8), 085310, 2008
1192008
Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities
R Butté, E Feltin, J Dorsaz, G Christmann, JF Carlin, N Grandjean, ...
Japanese journal of applied physics 44 (10R), 7207, 2005
1142005
Midgap density of states in hydrogenated polymorphous silicon
M Meaudre, R Meaudre, R Butté, S Vignoli, C Longeaud, JP Kleider, ...
Journal of Applied Physics 86 (2), 946-950, 1999
1121999
Midinfrared intersubband absorption in lattice-matched AlInN∕ GaN multiple quantum wells
S Nicolay, JF Carlin, E Feltin, R Butté, M Mosca, N Grandjean, M Ilegems, ...
Applied Physics Letters 87 (11), 2005
1082005
Crack-free highly reflective AlInN∕ AlGaN Bragg mirrors for UV applications
E Feltin, JF Carlin, J Dorsaz, G Christmann, R Butté, M Laügt, M Ilegems, ...
Applied Physics Letters 88 (5), 2006
1062006
Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
D Simeonov, A Dussaigne, R Butté, N Grandjean
Physical Review B—Condensed Matter and Materials Physics 77 (7), 075306, 2008
912008
High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate
N Vico Triviño, G Rossbach, U Dharanipathy, J Levrat, A Castiglia, ...
Applied Physics Letters 100 (7), 2012
862012
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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