Gerhard Klimeck

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87 articoli

11 articoli

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Timothy BoykinUniversity of Alabama in HuntsvilleEmail verificata su uah.edu
Rajib RahmanAssociate Professor of Physics, University of New South WalesEmail verificata su unsw.edu.au
Michael PovolotskyiJacobs TechnologiesEmail verificata su jacobs.com
Mathieu LuisierETH ZurichEmail verificata su iis.ee.ethz.ch
Tillmann KubisPurdue UniversityEmail verificata su purdue.edu
Roger K. LakeUniversity of California RiversideEmail verificata su ece.ucr.edu
Sven RoggeProfessor of Physics, University of New South WalesEmail verificata su unsw.edu.au
Hoon Ryu (류훈)Kumoh National Institute of TechnologyEmail verificata su kumoh.ac.kr
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue UniversityEmail verificata su purdue.edu
Abhijeet paulGraduate Student Purdue University, Device Engineer GlobalfoundriesEmail verificata su globalfoundries.com
Seungwon LeeNASA Jet Propulsion Laboratory, California Institute of TechnologyEmail verificata su jpl.nasa.gov
Yaohua TanUniversity of VirginiaEmail verificata su purdue.edu
Saumitra MehrotraNXP SemiconductorsEmail verificata su nxp.com
Andrea MorelloScientia Professor of Quantum Engineering, University of New South WalesEmail verificata su unsw.edu.au
Tarek AmeenComponent Design Engineer at IntelEmail verificata su intel.com
Neophytos NeophytouSchool of Engineering, University of WarwickEmail verificata su warwick.ac.uk
Susan CoppersmithProfessor of Physics, University of New South WalesEmail verificata su unsw.edu.au
Muhammad UsmanCSIRO's Data61 and The University of Melbourne, AustraliaEmail verificata su alumni.purdue.edu
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue UniversityEmail verificata su purdue.edu
Zhengping JiangSamsung Semiconductor Inc.Email verificata su samsung.com

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Gerhard Klimeck

Professor of Electrical and Computer Engineering, Purdue University

Email verificata su purdue.edu - Home page

nanoelectronics electron transport quantum dots coulomb blockade high performance computing


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Silicon quantum electronics FA Zwanenburg, AS Dzurak, A Morello, MY Simmons, LCL Hollenberg, ... Reviews of modern physics 85 (3), 961-1019, 2013	1396	2013
A single-atom transistor M Fuechsle, JA Miwa, S Mahapatra, H Ryu, S Lee, O Warschkow, ... Nature nanotechnology 7 (4), 242-246, 2012	1167	2012
Single and multiband modeling of quantum electron transport through layered semiconductor devices R Lake, G Klimeck, RC Bowen, D Jovanovic Journal of Applied Physics 81 (12), 7845-7869, 1997	1032	1997
Valence band effective-mass expressions in the sp 3 d 5 s* empirical tight-binding model applied to a Si and Ge parametrization TB Boykin, G Klimeck, F Oyafuso Physical Review B 69 (11), 115201, 2004	517	2004
Atomistic simulation of nanowires in the tight-binding formalism: From boundary conditions to strain calculations M Luisier, A Schenk, W Fichtner, G Klimeck Physical Review B—Condensed Matter and Materials Physics 74 (20), 205323, 2006	510	2006
Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET GP Lansbergen, R Rahman, CJ Wellard, I Woo, J Caro, N Collaert, ... Nature Physics 4 (8), 656-661, 2008	450	2008
Ohm’s law survives to the atomic scale B Weber, S Mahapatra, H Ryu, S Lee, A Fuhrer, TCG Reusch, ... Science 335 (6064), 64-67, 2012	385	2012
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting CH Yang, A Rossi, R Ruskov, NS Lai, FA Mohiyaddin, S Lee, C Tahan, ... Nature communications 4 (1), 2069, 2013	368	2013
Computational Electronics: semiclassical and quantum device modeling and simulation D Vasileska, SM Goodnick, G Klimeck CRC press, 2017	361	2017
Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory TB Boykin, G Klimeck, RC Bowen, F Oyafuso Physical Review B 66 (12), 125207, 2002	321	2002
Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures S Lee, F Oyafuso, P Von Allmen, G Klimeck Physical Review B 69 (4), 045316, 2004	300	2004
nanohub. org: Advancing education and research in nanotechnology G Klimeck, M McLennan, SP Brophy, GB Adams III, MS Lundstrom Computing in Science & Engineering 10 (5), 17-23, 2008	299	2008
Atomistic simulation of realistically sized nanodevices using NEMO 3-D—Part I: Models and benchmarks G Klimeck, SS Ahmed, H Bae, N Kharche, S Clark, B Haley, S Lee, ... IEEE Transactions on Electron Devices 54 (9), 2079-2089, 2007	294	2007
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering M Luisier, G Klimeck Physical Review B—Condensed Matter and Materials Physics 80 (15), 155430, 2009	280	2009
Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots G Klimeck, F Oyafuso, TB Boykin, RC Bowen, P von Allmen	278	2002
Tunnel field-effect transistors in 2-D transition metal dichalcogenide materials H Ilatikhameneh, Y Tan, B Novakovic, G Klimeck, R Rahman, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015	246	2015
Electronic properties of silicon nanowires Y Zheng, C Rivas, R Lake, K Alam, TB Boykin, G Klimeck IEEE transactions on electron devices 52 (6), 1097-1103, 2005	246	2005
NEMO5: A parallel multiscale nanoelectronics modeling tool S Steiger, M Povolotskyi, HH Park, T Kubis, G Klimeck IEEE Transactions on Nanotechnology 10 (6), 1464-1474, 2011	238	2011
Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions S Lee, L Jönsson, JW Wilkins, GW Bryant, G Klimeck Physical Review B 63 (19), 195318, 2001	231	2001
Valley splitting in strained silicon quantum wells TB Boykin, G Klimeck, MA Eriksson, M Friesen, SN Coppersmith, ... Applied Physics Letters 84 (1), 115-117, 2004	229	2004

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