| Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices W Wang, M Wang, E Ambrosi, A Bricalli, M Laudato, Z Sun, X Chen, ... Nature communications 10 (1), 81, 2019 | 282 | 2019 |
| Solving matrix equations in one step with cross-point resistive arrays Z Sun, G Pedretti, E Ambrosi, A Bricalli, W Wang, D Ielmini Proceedings of the National Academy of Sciences 116 (10), 4123-4128, 2019 | 233 | 2019 |
| Silicon Oxide (SiOx): A Promising Material for Resistance Switching? A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ... Advanced materials 30 (43), 1801187, 2018 | 206 | 2018 |
| Logic computing with stateful neural networks of resistive switches Z Sun, E Ambrosi, A Bricalli, D Ielmini Advanced Materials 30 (38), 1802554, 2018 | 152 | 2018 |
| Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices E Ambrosi, A Bricalli, M Laudato, D Ielmini Faraday discussions 213, 87-98, 2019 | 93 | 2019 |
| SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini 2016 IEEE International Electron Devices Meeting (IEDM), 4.3. 1-4.3. 4, 2016 | 82 | 2016 |
| Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part II: Select devices A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini IEEE Transactions on Electron Devices 65 (1), 122-128, 2017 | 70 | 2017 |
| Resistive switching device technology based on silicon oxide for improved ON–OFF ratio—Part I: Memory devices A Bricalli, E Ambrosi, M Laudato, M Maestro, R Rodriguez, D Ielmini IEEE Transactions on Electron Devices 65 (1), 115-121, 2017 | 65 | 2017 |
| Volatile resistive switching memory based on Ag ion drift/diffusion Part I: Numerical modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3795-3801, 2019 | 63 | 2019 |
| Volatile resistive switching memory based on Ag ion drift/diffusion—Part II: Compact modeling W Wang, M Laudato, E Ambrosi, A Bricalli, E Covi, YH Lin, D Ielmini IEEE Transactions on Electron Devices 66 (9), 3802-3808, 2019 | 50 | 2019 |
| In-memory PageRank accelerator with a cross-point array of resistive memories Z Sun, E Ambrosi, G Pedretti, A Bricalli, D Ielmini IEEE Transactions on Electron Devices 67 (4), 1466-1470, 2020 | 47 | 2020 |
| Switching dynamics of Ag-based filamentary volatile resistive switching devices—Part I: Experimental characterization E Covi, W Wang, YH Lin, M Farronato, E Ambrosi, D Ielmini IEEE Transactions on Electron Devices 68 (9), 4335-4341, 2021 | 40 | 2021 |
| Time complexity of in-memory solution of linear systems Z Sun, G Pedretti, P Mannocci, E Ambrosi, A Bricalli, D Ielmini IEEE Transactions on Electron Devices 67 (7), 2945-2951, 2020 | 40 | 2020 |
| Switching dynamics of Ag-based filamentary volatile resistive switching devices—Part II: Mechanism and modeling W Wang, E Covi, YH Lin, E Ambrosi, A Milozzi, C Sbandati, M Farronato, ... IEEE Transactions on Electron Devices 68 (9), 4342-4349, 2021 | 36 | 2021 |
| A volatile RRAM synapse for neuromorphic computing E Covi, YH Lin, W Wang, T Stecconi, V Milo, A Bricalli, E Ambrosi, ... 2019 26th IEEE International Conference on Electronics, Circuits and Systems …, 2019 | 23 | 2019 |
| Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing W Wang, A Bricalli, M Laudato, E Ambrosi, E Covi, D Ielmini 2018 IEEE International Electron Devices Meeting (IEDM), 40.3. 1-40.3. 4, 2018 | 23 | 2018 |
| In‐Memory Eigenvector Computation in Time O(1) Z Sun, G Pedretti, E Ambrosi, A Bricalli, D Ielmini Advanced Intelligent Systems 2 (8), 2000042, 2020 | 22 | 2020 |
| Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM) G Pedretti, E Ambrosi, D Ielmini 2021 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2021 | 19 | 2021 |
| Low variability high endurance and low voltage arsenic-free selectors based on GeCTe E Ambrosi, CH Wu, HY Lee, PC Chang, CF Hsu, CM Lee, CC Chang, ... 2021 IEEE International Electron Devices Meeting (IEDM), 28.5. 1-28.5. 4, 2021 | 17 | 2021 |
| Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks V Milo, G Pedretti, M Laudato, A Bricalli, E Ambrosi, S Bianchi, E Chicca, ... 2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018 | 16 | 2018 |
Daniele IelminiProfessor of ElectronicsEmail verificata su elet.polimi.it