Segui
Loke Wan Khai
Titolo
Citata da
Citata da
Anno
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth
Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ...
Optics express 25 (14), 15818-15827, 2017
1022017
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique
Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ...
Optics express 23 (14), 18611-18619, 2015
892015
Comparison of nitrogen compositions in the as-grown on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy
WJ Fan, SF Yoon, TK Ng, SZ Wang, WK Loke, R Liu, A Wee
Applied physics letters 80 (22), 4136-4138, 2002
852002
Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy
H Tanoto, SF Yoon, WK Loke, EA Fitzgerald, C Dohrman, B Narayanan, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
802006
Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics
BW Jia, KH Tan, WK Loke, S Wicaksono, KH Lee, SF Yoon
ACS Photonics 5 (4), 1512-1520, 2018
792018
Rate Equations for 1.3-m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs–GaAs Quantum-Dot Lasers
CZ Tong, SF Yoon, CY Ngo, CY Liu, WK Loke
IEEE journal of quantum electronics 42 (11), 1175-1183, 2006
752006
Germanium-tin on Si avalanche photodiode: device design and technology demonstration
Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ...
IEEE Transactions on Electron Devices 62 (1), 128-135, 2014
672014
Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range
W Wang, Y Dong, SY Lee, WK Loke, D Lei, SF Yoon, G Liang, X Gong, ...
Optics express 25 (16), 18502-18507, 2017
602017
Rapid thermal annealing of grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence
WK Loke, SF Yoon, SZ Wang, TK Ng, WJ Fan
Journal of applied physics 91 (8), 4900-4903, 2002
602002
Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell
KH Tan, S Wicaksono, WK Loke, D Li, SF Yoon, EAA Fitzgerald, ...
Journal of Crystal Growth 335 (1), 66-69, 2011
442011
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
W Wang, D Lei, YC Huang, KH Lee, WK Loke, Y Dong, S Xu, CS Tan, ...
Optics express 26 (8), 10305-10314, 2018
422018
Defect-induced trap-assisted tunneling current in GaInNAs grown on GaAs substrate
WK Loke, SF Yoon, S Wicaksono, KH Tan, KL Lew
Journal of Applied Physics 102 (5), 2007
342007
Incorporation of N into GaAsN under N overpressure and underpressure conditions
S Zhongzhe, YS Fatt, YK Chuin, LW Khai, F Weijun, W Shanzhong, ...
Journal of applied physics 94 (2), 1069-1073, 2003
342003
High gain AlGaAs∕ GaAs heterojunction bipolar transistor fabricated on SiGe∕ Si substrate
KL Lew, SF Yoon, WK Loke, H Tanoto, CL Dohrman, DM Isaacson, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
322007
High-speed picosecond pulse response GaNAsSb pin photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy
KH Tan, SF Yoon, WK Loke, S Wicaksono, KL Lew, A Stöhr, O Ecin, ...
Applied physics letters 90 (18), 2007
322007
Determination of nitrogen composition in GaNxas1− x epilayer on GaAs
WJ Fan, SF Yoon, WK Cheah, WK Loke, TK Ng, SZ Wang, R Liu, A Wee
Journal of crystal growth 268 (3-4), 470-474, 2004
322004
Degradation of subcells and tunnel junctions during growth of GaInP/Ga (In) As/GaNAsSb/Ge 4‐junction solar cells
I García, M Ochoa, I Lombardero, L Cifuentes, M Hinojosa, P Caño, ...
Progress in Photovoltaics: Research and Applications 25 (11), 887-895, 2017
312017
Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength
Y Dong, W Wang, SY Lee, D Lei, X Gong, WK Loke, SF Yoon, G Liang, ...
Semiconductor Science and Technology 31 (9), 095001, 2016
302016
Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
TK Ng, SF Yoon, SZ Wang, WK Loke, WJ Fan
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
302002
Formation of interfacial misfit dislocation in GaSb/GaAs heteroepitaxy via anion exchange process
KH Tan, BW Jia, WK Loke, S Wicaksono, SF Yoon
Journal of Crystal Growth 427, 80-86, 2015
272015
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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