GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration K Volz, A Beyer, W Witte, J Ohlmann, I Németh, B Kunert, W Stolz
Journal of Crystal Growth 315 (1), 37-47, 2011
407 2011 106 W continuous-wave output power from vertical-external-cavity surface-emitting laser B Heinen, TL Wang, M Sparenberg, A Weber, B Kunert, J Hader, ...
Electronics letters 48 (9), 1, 2012
285 2012 Exciton–LO-phonon quantum kinetics: evidence of memory effects in bulk GaAs L Bányai, DBT Thoai, E Reitsamer, H Haug, D Steinbach, MU Wehner, ...
Physical review letters 75 (11), 2188, 1995
257 1995 From N isoelectronic impurities to N-induced bands in the PJ Klar, H Grüning, W Heimbrodt, J Koch, F Höhnsdorf, W Stolz, ...
Applied Physics Letters 76 (23), 3439-3441, 2000
247 2000 (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen PJ Klar, H Grüning, J Koch, S Schäfer, K Volz, W Stolz, W Heimbrodt, ...
Physical Review B 64 (12), 121203, 2001
244 2001 Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions I Németh, B Kunert, W Stolz, K Volz
Journal of Crystal Growth 310 (7-9), 1595-1601, 2008
212 2008 Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28–1.38 µm F Hohnsdorf, J Koch, S Leu, W Stolz, B Borchert, M Druminski
Electronics Letters 35 (7), 571-572, 1999
201 1999 Laser operation of Ga (NAsP) lattice-matched to (001) silicon substrate S Liebich, M Zimprich, A Beyer, C Lange, DJ Franzbach, S Chatterjee, ...
Applied Physics Letters 99 (7), 2011
186 2011 4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation KG Wilcox, AC Tropper, HE Beere, DA Ritchie, B Kunert, B Heinen, ...
Optics express 21 (2), 1599-1605, 2013
185 2013 Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser P Ludewig, N Knaub, N Hossain, S Reinhard, L Nattermann, IP Marko, ...
Applied Physics Letters 102 (24), 2013
180 2013 Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate B Kunert, I Németh, S Reinhard, K Volz, W Stolz
Thin Solid Films 517 (1), 140-143, 2008
173 2008 Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power M Scheller, TL Wang, B Kunert, W Stolz, SW Koch, JV Moloney
Electronics letters 48 (10), 1, 2012
159 2012 Direct-band-gap Ga (NAsP)-material system pseudomorphically grown on GaP substrate B Kunert, K Volz, J Koch, W Stolz
Applied Physics Letters 88 (18), 2006
144 2006 Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in F Masia, G Pettinari, A Polimeni, M Felici, A Miriametro, M Capizzi, ...
Physical Review B—Condensed Matter and Materials Physics 73 (7), 073201, 2006
139 2006 Disorder mediated biexcitonic beats in semiconductor quantum wells TF Albrecht, K Bott, T Meier, A Schulze, M Koch, ST Cundiff, J Feldmann, ...
Physical Review B 54 (7), 4436, 1996
139 1996 Optical coherence in semiconductors: Strong emission mediated by nondegenerate interactions ST Cundiff, M Koch, WH Knox, J Shah, W Stolz
Physical review letters 77 (6), 1107, 1996
139 1996 Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons J Rudolph, S Döhrmann, D Hägele, M Oestreich, W Stolz
Applied Physics Letters 87 (24), 2005
128 2005 Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy O Rubel, M Galluppi, SD Baranovskii, K Volz, L Geelhaar, H Riechert, ...
Journal of applied physics 98 (6), 2005
121 2005 GaP heteroepitaxy on Si (001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure A Beyer, J Ohlmann, S Liebich, H Heim, G Witte, W Stolz, K Volz
Journal of Applied Physics 111 (8), 2012
118 2012 Optical and structural properties of GaAs grown on (100) Si by molecular‐beam epitaxy W Stolz, FEG Guimaraes, K Ploog
Journal of applied physics 63 (2), 492-499, 1988
114 1988 