30-mW-class high-power and high-efficiency blue semipolar (1011) InGaN/GaN light-emitting diodes obtained by backside roughening technique Y Zhao, J Sonoda, CC Pan, S Brinkley, I Koslow, K Fujito, H Ohta, ...
Applied physics express 3 (10), 102101, 2010
100 2010 Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes H Masui, J Sonoda, N Pfaff, I Koslow, S Nakamura, SP DenBaars
Journal of Physics D: Applied Physics 41 (16), 165105, 2008
83 2008 444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ...
Applied Physics Letters 100 (2), 2012
76 2012 Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ...
Applied Physics Letters 101 (12), 2012
65 2012 Trace analysis of non-basal plane misfit stress relaxation in (202¯ 1) and (303¯ 1¯) semipolar InGaN/GaN heterostructures MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ...
Applied Physics Letters 100 (20), 2012
51 2012 Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar C Mounir, UT Schwarz, IL Koslow, M Kneissl, T Wernicke, T Schimpke, ...
Physical Review B 93 (23), 235314, 2016
36 2016 Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures F Wu, EC Young, I Koslow, MT Hardy, PS Hsu, AE Romanov, S Nakamura, ...
Applied Physics Letters 99 (25), 2011
35 2011 Electroluminescence characterization of (2021) InGaN/GaN light emitting diodes with various wavelengths RB Chung, YD Lin, I Koslow, N Pfaff, H Ohta, J Ha, SP DenBaars, ...
Japanese Journal of Applied Physics 49 (7R), 070203, 2010
35 2010 Impact of electron irradiation on electron holographic potentiometry JB Park, T Niermann, D Berger, A Knauer, I Koslow, M Weyers, M Kneissl, ...
Applied Physics Letters 105 (9), 2014
32 2014 Droop improvement in high current range on PSS-LEDs S Tanaka, Y Zhao, I Koslow, CC Pan, HT Chen, J Sonoda, SP DenBaars, ...
Electronics letters 47 (5), 335-336, 2011
30 2011 High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution DB Thompson, JJ Richardson, I Koslow, JS Ha, FF Lange, SP DenBaars, ...
US Patent 8,637,334, 2014
27 2014 Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays JJ Richardson, DB Thompson, I Koslow, JS Ha, FF Lange, SP DenBaars, ...
US Patent 8,536,618, 2013
27 2013 Optimization of device structures for bright blue semipolar (1011) light emitting diodes via metalorganic chemical vapor deposition Y Zhao, J Sonada, I Koslow, CC Pan, H Ohta, JS Ha, SP DenBaars, ...
Japanese Journal of Applied Physics 49 (7R), 070206, 2010
24 2010 Vertical stand transparent light-emitting diode architecture for high-efficiency and high-power light-emitting diodes CC Pan, I Koslow, J Sonoda, H Ohta, JS Ha, S Nakamura, SP DenBaars
Japanese journal of applied physics 49 (8R), 080210, 2010
21 2010 Preparation and structure of ultra-thin GaN (0001) layers on In0. 11Ga0. 89N-single quantum wells S Alamé, AN Quezada, D Skuridina, C Reich, D Henning, M Frentrup, ...
Materials Science in Semiconductor Processing 55, 7-11, 2016
18 2016 High power and high efficiency blue InGaN Light emitting diodes on free-standing semipolar (3031) bulk GaN substrate IL Koslow, J Sonoda, RB Chung, CC Pan, S Brinkley, H Ohta, ...
Japanese journal of applied physics 49 (8R), 080203, 2010
18 2010 Onset of plastic relaxation in semipolar (112¯ 2) InxGa1− xN/GaN heterostructures IL Koslow, MT Hardy, PS Hsu, F Wu, AE Romanov, EC Young, ...
Journal of Crystal Growth 388, 48-53, 2014
17 2014 Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements M Rychetsky, I Koslow, B Avinc, J Rass, T Wernicke, K Bellmann, ...
Journal of Applied Physics 119 (9), 2016
15 2016 Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯ 1) InGaN/GaN heterostructures MT Hardy, EC Young, P Shan Hsu, DA Haeger, IL Koslow, S Nakamura, ...
Applied Physics Letters 101 (13), 2012
14 2012 Semipolar single-crystal ZnO films deposited by low-temperature aqueous solution phase epitaxy on GaN light-emitting diodes JJ Richardson, I Koslow, CC Pan, Y Zhao, JS Ha, SP DenBaars
Applied Physics Express 4 (12), 126502, 2011
12 2011 