Trapping effects and microwave power performance in AlGaN/GaN HEMTs SC Binari, K Ikossi, JA Roussos, W Kruppa, D Park, HB Dietrich, ...
IEEE Transactions on Electron Devices 48 (3), 465-471, 2001
830 2001 Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/plasma treatment prior to SiN passivation AP Edwards, JA Mittereder, SC Binari, DS Katzer, DF Storm, JA Roussos
IEEE electron device letters 26 (4), 225-227, 2005
172 2005 Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress JA Mittereder, SC Binari, PB Klein, JA Roussos, DS Katzer, DF Storm, ...
Applied Physics Letters 83 (8), 1650-1652, 2003
117 2003 Full-wafer characterization of AlGaN/GaN HEMTs on free-standing CVD diamond substrates KD Chabak, JK Gillespie, V Miller, A Crespo, J Roussos, M Trejo, ...
IEEE electron device letters 31 (2), 99-101, 2009
97 2009 BP Downey, DJ Meyer, DS Katzer, JA Roussos, M Pan, X Gao
IEEE electron device letters 35 (5), 527-529, 2014
85 2014 High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ...
IEEE electron device letters 34 (2), 199-201, 2013
68 2013 Reduction of buffer layer conduction near plasma-assisted molecular-beam epitaxy grown GaN/AlN interfaces by beryllium doping DF Storm, DS Katzer, SC Binari, ER Glaser, BV Shanabrook, JA Roussos
Applied physics letters 81 (20), 3819-3821, 2002
56 2002 Ion induced charge collection in GaAs MESFETs A Campbell, A Knudson, D McMorrow, W Anderson, J Roussos, S Espy, ...
IEEE Transactions on Nuclear Science 36 (6), 2292-2299, 1989
55 1989 Large-signal RF performance of nanocrystalline diamond coated AlGaN/GaN high electron mobility transistors DJ Meyer, TI Feygelson, TJ Anderson, JA Roussos, MJ Tadjer, ...
IEEE Electron Device Letters 35 (10), 1013-1015, 2014
43 2014 X-band power and linearity performance of compositionally graded AlGaN channel transistors SH Sohel, A Xie, E Beam, H Xue, JA Roussos, T Razzak, S Bajaj, Y Cao, ...
IEEE Electron Device Letters 39 (12), 1884-1887, 2018
42 2018 AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization DF Storm, DS Katzer, JA Roussos, JA Mittereder, R Bass, SC Binari, ...
Journal of crystal growth 301, 429-433, 2007
42 2007 MBE growth of AlGaN/GaN HEMTs with high power density DS Katzer, SC Binari, DF Storm, JA Roussos, BV Shanabrook, ER Glaser
Electronics Letters 38 (25), 1, 2002
38 2002 Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs DS Katzer, DF Storm, SC Binari, JA Roussos, BV Shanabrook, ER Glaser
Journal of crystal growth 251 (1-4), 481-486, 2003
36 2003 AlN/GaN insulated gate HEMTs with HfO2 gate dielectric DA Deen, SC Binari, DF Storm, DS Katzer, JA Roussos, JC Hackley, ...
Electronics letters 45 (8), 423-424, 2009
29 2009 Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates DF Storm, JA Roussos, DS Katzer, JA Mittereder, R Bass, SC Binari, ...
Electronics Letters 42 (11), 663-665, 2006
28 2006 Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ...
Applied Physics Letters 116 (11), 2020
26 2020 Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures DF Storm, DS Katzer, DA Deen, R Bass, DJ Meyer, JA Roussos, SC Binari, ...
Solid-state electronics 54 (11), 1470-1473, 2010
24 2010 Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates DF Storm, DS Katzer, JA Roussos, JA Mittereder, R Bass, SC Binari, ...
Journal of crystal growth 305 (2), 340-345, 2007
24 2007 Epitaxial single-crystal ScAlN on 4H-SiC for high-velocity, low-loss SAW devices VJ Gokhale, BP Downey, MT Hardy, EN Jin, JA Roussos, DJ Meyer
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems …, 2020
20 2020 Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy PB Klein, JA Mittereder, SC Binari, JA Roussos, DS Katzer, DF Storm
Electronics Letters 39 (18), 1, 2003
19 2003 