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Physical Review B 90 (20), 205422, 2014
1571 2014 Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ...
Nature nanotechnology 10 (6), 534-540, 2015
1413 2015 Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ...
ACS nano 9 (7), 7019-7026, 2015
466 2015 Measurement of Lateral and Interfacial Thermal Conductivity of Single- and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique X Zhang, D Sun, Y Li, GH Lee, X Cui, D Chenet, Y You, TF Heinz, ...
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Nano letters 20 (2), 841-851, 2019
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Science advances 2 (5), e1600002, 2016
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ACS Applied Materials & Interfaces 13 (11), 13063-13071, 2021
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IEEE Journal of Selected Topics in Quantum Electronics 27 (2), 1-9, 2020
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23 2019 Characterization of Layer Number of Two‐Dimensional Transition Metal Diselenide Semiconducting Devices Using Si‐Peak Analysis X Zhang
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IEEE Transactions on Electron Devices 65 (10), 4068-4072, 2018
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20 2013 Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics F Ye, Q Liu, B Xu, PXL Feng, X Zhang
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11 2022 