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Soumya Ranjan Panda
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Analysis of high-frequency measurement of transistors along with electromagnetic and SPICE cosimulation
S Fregonese, M Cabbia, C Yadav, M Deng, SR Panda, M De Matos, ...
IEEE Transactions on Electron Devices 67 (11), 4770-4776, 2020
182020
Device and circuit performance of Si-based accumulation-mode CGAA CMOS inverter
Soumya Ranjan Panda, KP Pradhan, PK Sahu
Materials Science in Semiconductor Processing 66, 87-91, 2017
132017
TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz
SR Panda, S Fregonese, M Deng, A Chakravorty, T Zimmer
Solid-State Electronics 174, 107915, 2020
122020
Source underlap—A novel technique to improve safe operating area and output-conductance in LDMOS transistors
MS Bhoir, KN Kaushal, SR Panda, AK Singh, HS Jatana, NR Mohapatra
IEEE Transactions on Electron Devices 66 (11), 4823-4828, 2019
112019
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range
SR Panda, S Fregonese, A Chakravorty, T Zimmer
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
82019
Static performance analysis on UTB-SG and DG MOSFETs with Si and III–V channel materials
D Singh, S Panda, SK Mohapatra, KP Pradhan, PK Sahu
2014 International Conference on High Performance Computing and Applications …, 2014
82014
Collector-substrate modeling of SiGe HBTs up to THz range
B Saha, S Frégonese, SR Panda, A Chakravorty, D Céli, T Zimmer
2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019
72019
Junctionless GAA nanowire transistor: Towards circuit application
SR Panda, R Sharma, KP Pradhan, PK Sahu
2016 3rd International Conference on Emerging Electronics (ICEE), 1-4, 2016
42016
Sub-THz and THz SiGe HBT electrical compact modeling
B Saha, S Fregonese, A Chakravorty, SR Panda, T Zimmer
Electronics 10 (12), 1397, 2021
32021
A TCAD-based analysis of substrate bias effect on asymmetric lateral SiGe HBT for THz applications
SR Panda, S Fregonese, P Chevalier, A Chakravorty, T Zimmer
IEEE Transactions on Electron Devices 70 (5), 2192-2198, 2023
22023
1T FDSOI Based LIF Neuron Without Reset Circuitry: A proposal and Investigation
V Rajakumari, SR Panda, KP Pradhan
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
12023
SiGe HBT Device Characterization up-to 500 GHz: Procedure and Layout Improvement of Calibration Standards
S R Panda, M Cabbia, M Deng, S Fregonese, C Yadav, A Chakravorty, T Zimmer
2020 5th IEEE International Conference on Emerging Electronics (ICEE), ISBN …, 2020
1*2020
Next Generation SiGe HBTs for Energy Efficient Microwave Power Amplification
SR Panda, P Billy, A Gauthier, N Guitard, P Chevalier, M De Matos, ...
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2024
2024
Exploring compact modeling of SiGe HBTs in Sub-THz range with HICUM
SR Panda, T Zimmer, A Chakravorty, N Derrier, S Fregonese
IEEE Transactions on Electron Devices, 2023
2023
Magnetic Proximity Effect in LaMnO3-LaFeO3 Bilayer
S Panda, MK Das, N Mohapatra
Journal of Physics: Conference Series 2518 (1), 012014, 2023
2023
SiGe-based Nanowire HBT for THz Applications
SR Panda, S Fregonese, A Chakravorty, T Zimmer
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023
2023
Investigating high-frequency sige hbts: assessment of characterization and new architecture exploration
S Panda
Université de Bordeaux; Indian Institute of technology (Chennai, Inde), 2022
2022
Sub-THz and THz SiGe HBT Electrical Compact Modeling. Electronics 2021, 10, 1397
B Saha, S Fregonese, A Chakravorty, SR Panda, T Zimmer
s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021
2021
Assessment of device RF performance and behavior using TCAD simulation
SR Panda, S Fregonese, M Deng, A Chakravorty, T Zimmer
IEEE BEE BRANCH, 2019
2019
TCAD versus High Frequency Mesurements of SiGe HBTs
SR Panda, S Fregonese, C Anjan, T Zimmer
AKB: BIPOLAR Working Group, 2019
2019
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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