Resistive memory device requirements for a neural algorithm accelerator S Agarwal, SJ Plimpton, DR Hughart, AH Hsia, I Richter, JA Cox, ...
2016 International Joint Conference on Neural Networks (IJCNN), 929-938, 2016
210 2016 Defect Interactions of BR Tuttle, DR Hughart, RD Schrimpf, DM Fleetwood, ST Pantelides
IEEE Transactions on Nuclear Science 57 (6), 3046-3053, 2010
73 2010 Achieving ideal accuracies in analog neuromorphic computing using periodic carry S Agarwal, RBJ Gedrim, AH Hsia, DR Hughart, EJ Fuller, AA Talin, ...
2017 Symposium on VLSI Technology, T174-T175, 2017
62 2017 A Comparison of the Radiation Response of DR Hughart, AJ Lohn, PR Mickel, SM Dalton, PE Dodd, MR Shaneyfelt, ...
IEEE Transactions on Nuclear Science 60 (6), 4512-4519, 2013
54 2013 The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing DR Hughart, RD Schrimpf, DM Fleetwood, NL Rowsey, ME Law, BR Tuttle, ...
IEEE Transactions on Nuclear Science 59 (6), 3087-3092, 2012
53 2012 Impact of linearity and write noise of analog resistive memory devices in a neural algorithm accelerator RB Jacobs-Gedrim, S Agarwal, KE Knisely, JE Stevens, ...
2017 IEEE International Conference on Rebooting Computing (ICRC), 1-10, 2017
30 2017 A CMOS compatible, forming free TaOx ReRAM AJ Lohn, JE Stevens, PR Mickel, DR Hughart, MJ Marinella
ECS Transactions 58 (5), 59, 2013
30 2013 Mechanisms of interface trap buildup and annealing during elevated temperature irradiation DR Hughart, RD Schrimpf, DM Fleetwood, BR Tuttle, ST Pantelides
IEEE Transactions on Nuclear Science 58 (6), 2930-2936, 2011
29 2011 Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling IG Batyrev, D Hughart, R Durand, M Bounasser, BR Tuttle, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 55 (6), 3039-3045, 2008
26 2008 2016 Int. Joint Conf. on Neural Networks (IJCNN) S Agarwal, SJ Plimpton, DR Hughart, AH Hsia, I Richter, JA Cox, ...
IEEE, 2016
24 2016 Irradiation effects on perpendicular anisotropy spin–orbit torque magnetic tunnel junctions M Alamdar, LJ Chang, K Jarvis, P Kotula, C Cui, R Gearba-Dolocan, Y Liu, ...
IEEE Transactions on Nuclear Science 68 (5), 665-670, 2021
22 2021 Low dose rate test results of National Semiconductor's ELDRS-free bipolar amplifier LM124 and comparators LM139 and LM193 K Kruckmeyer, L McGee, B Brown, D Hughart
2008 IEEE Radiation Effects Data Workshop, 110-117, 2008
20 2008 The Susceptibility of ML McLain, HP Hjalmarson, TJ Sheridan, PR Mickel, D Hanson, ...
IEEE Transactions on Nuclear Science 61 (6), 2997-3004, 2014
18 2014 Total ionizing dose and displacement damage effects on TaOx memristive memories DR Hughart, SM Dalton, PR Mickel, PE Dodd, MR Shaneyfelt, E Bielejec, ...
2013 IEEE Aerospace Conference, 1-10, 2013
18 2013 A Comparison of Radiation-Induced and High-Field Electrically Stress-Induced Interface Defects in Si/SiO₂ MOSFETs via Electrically Detected Magnetic Resonance FV Sharov, SJ Moxim, GS Haase, DR Hughart, PM Lenahan
IEEE Transactions on Nuclear Science 69 (3), 208-215, 2022
16 2022 Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation RB Jacobs-Gedrim, S Agarwal, RS Goeke, C Smith, PS Finnegan, ...
Journal of Applied Physics 124 (20), 2018
15 2018 ROSS SIM S Agarwal, SJ Plimpton, RL Schiek, I Richter, AH Hsia, DR Hughart, ...
15 2017 Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy TP Xiao, CH Bennett, FB Mancoff, JE Manuel, DR Hughart, ...
IEEE Transactions on Nuclear Science 68 (5), 581-587, 2021
14 2021 Effects of ionizing radiation on TaOx -based memristive devices M McLain, D Hughart, D Hanson, M Marinella
2014 IEEE Aerospace Conference, 1-9, 2014
14 2014 The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors DR Hughart, RD Schrimpf, DM Fleetwood, XJ Chen, HJ Barnaby, ...
IEEE Transactions on Nuclear Science 56 (6), 3361-3366, 2009
14 2009 