Articoli con mandati relativi all'accesso pubblico - Kumari Neeraj KaushalUlteriori informazioni
Non disponibili pubblicamente: 4
Unified theory of the capacitance behavior in LDMOS devices
KN Kaushal, NR Mohapatra
IEEE Transactions on Electron Devices 69 (1), 39-44, 2021
Mandati: Department of Science & Technology, India
Source Underlap—A Novel Technique to Improve Safe Operating Area and Output-Conductance in LDMOS Transistors
MS Bhoir, KN Kaushal, SR Panda, AK Singh, HS Jatana, NR Mohapatra
IEEE Transactions on Electron Devices 66 (11), 4823-4828, 2019
Mandati: Department of Science & Technology, India
A Physics-Based Compact Model to Capture Cryogenic Behavior of LDMOS Transistors
KN Kaushal, NR Mohapatra
IEEE Transactions on Electron Devices 70 (3), 857-863, 2023
Mandati: Department of Science & Technology, India
Compact Modeling of LDMOS Transistors Over a Wide Temperature Range Including Cryogenics
Y Machhiwar, G Gill, KN Kaushal, NR Mohapatra, H Agarwal
IEEE Transactions on Electron Devices, 2023
Mandati: Department of Science & Technology, India
Disponibile pubblicamente: 1
A zero-cost technique to improve ON-state performance and reliability of power LDMOS transistors
KN Kaushal, NR Mohapatra
IEEE Journal of the Electron Devices Society 9, 334-341, 2021
Mandati: Department of Science & Technology, India
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