Segui
Haibo Li
Haibo Li
Samsung Semiconductor Inc.
Email verificata su samsung.com
Titolo
Citata da
Citata da
Anno
Dielectrophoretic separation and manipulation of live and heat-treated cells of Listeria on microfabricated devices with interdigitated electrodes
H Li, R Bashir
Sensors and actuators B: chemical 86 (2-3), 215-221, 2002
4072002
Characterization and modeling of a microfluidic dielectrophoresis filter for biological species
H Li, Y Zheng, D Akin, R Bashir
Journal of microelectromechanical systems 14 (1), 103-112, 2005
1212005
Selective data recycling in non-volatile memory
Y Cai, F Zhang, H Li, J Lee
US Patent 10,002,073, 2018
111*2018
Threshold voltage adjustment for a select gate transistor in a stacked non-volatile memory device
H Li, X Costa, M Higashitani, ML Mui
US Patent 8,867,271, 2014
912014
Real-time virus trapping and fluorescent imaging in microfluidic devices
D Akin, H Li, R Bashir
Nano Letters 4 (2), 257-259, 2004
712004
Reading voltage calculation in solid-state storage devices
Y Sun, D Zhao, H Li, KS Stoev
US Patent App. 13/917,518, 2014
602014
Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current
X Costa, H Li, M Higashitani, ML Mui
US Patent 9,019,775, 2015
582015
Detect developed bad blocks in non-volatile memory devices
H Li, S Kim, J Han
US Patent 10,020,072, 2018
39*2018
Modeling of threshold voltage distribution in NAND flash memory: A Monte Carlo method
H Li
IEEE Transactions on Electron Devices 63 (9), 3527-3532, 2016
392016
Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits
X Costa, H Li, M Higashitani, ML Mui
US Patent 8,787,094, 2014
322014
Erase inhibit for 3D non-volatile memory
H Li, X Costa
US Patent 8,488,382, 2013
322013
Systems and methods of write precompensation to extend life of a solid-state memory
KS Stoev, H Li, D Zhao, Y Sun
US Patent 9,013,920, 2015
312015
Erase operation with controlled select gate voltage for 3D non-volatile memory
H Li, X Costa, C Zhang
US Patent 8,908,435, 2014
312014
Structural characteristics and hardness of zirconium carbide films prepared by tri-ion beam-assisted deposition
XM He, L Shu, HB Li, HD Li, ST Lee
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (4 …, 1998
311998
Erase for 3D non-volatile memory with sequential selection of word lines
X Costa, S Yu, RE Scheuerlein, H Li, ML Mui
US Patent 8,908,444, 2014
282014
Sensing for NAND memory based on word line position
H Li
US Patent 8,441,853, 2013
242013
Data retention monitoring using temperature history in solid state drives
D Zhao, Y Sun, H Li, KS Stoev, MML Syu
US Patent 9,165,668, 2015
212015
Data retention flags in solid-state drives
D Zhao, Y Sun, H Li, JY Yang, K Stoev
US Patent 9,263,136, 2016
192016
High corrosion resistant ZrC films synthesized by ion-beamassisted deposition
XM He, L Shu, HB Li, D Weng
Journal of materials research 14 (2), 615-618, 1999
191999
Using channel-to-channel coupling to compensate floating gate-to-floating gate coupling in programming of non-volatile memory
H Li, G Liang
US Patent 8,395,936, 2013
182013
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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