Strain-related phenomena in GaN thin films C Kisielowski, J Krüger, S Ruvimov, T Suski, JW Ager III, E Jones, ...
Physical review B 54 (24), 17745, 1996
1022 1996 Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy OH Nam, MD Bremser, TS Zheleva, RF Davis
Applied Physics Letters 71 (18), 2638-2640, 1997
858 1997 Dislocation density reduction via lateral epitaxy in selectively grown GaN structures TS Zheleva, OH Nam, MD Bremser, RF Davis
Applied Physics Letters 71 (17), 2472-2474, 1997
681 1997 III-V nitrides for electronic and optoelectronic applications RF Davis
Proceedings of the IEEE 79 (5), 702-712, 1991
622 1991 Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide RF Davis, CH Carter Jr, CE Hunter
US Patent App. 07/594,856, 1995
615 * 1995 Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide RF Davis, G Kelner, M Shur, JW Palmour, JA Edmond
Proceedings of the IEEE 79 (5), 677-701, 1991
599 1991 A critical review of ohmic and rectifying contacts for silicon carbide LM Porter, RF Davis
Materials Science and Engineering: B 34 (2-3), 83-105, 1995
582 1995 Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy MJ Paisley, Z Sitar, JB Posthill, RF Davis
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989
506 1989 Gold Schottky contacts on oxygen plasma-treated, n -type BJ Coppa, RF Davis, RJ Nemanich
Applied Physics Letters 82 (3), 400-402, 2003
478 2003 Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates KJ Linthicum, T Gehrke, DB Thomson, EP Carlson, P Rajagopal, ...
US Patent 6,177,688, 2001
473 2001 Cleaning of AlN and GaN surfaces SW King, JP Barnak, MD Bremser, KM Tracy, C Ronning, RF Davis, ...
Journal of Applied Physics 84 (9), 5248-5260, 1998
415 1998 Diamond films and coatings: development, properties, and applications RF Davis
(No Title), 1993
343 1993 Martensitic transformations in Ti-Mo alloys R Davis, HM Flower, DRF West
Journal of Materials Science 14, 712-722, 1979
323 1979 Epitaxial Growth and Characterization of β‐SiC Thin Films P Liaw, RF Davis
Journal of the Electrochemical Society 132 (3), 642, 1985
314 1985 GaN thin films deposited via organometallic vapor phase epitaxy on α (6H)-SiC (0001) using high-temperature monocrystalline AlN buffer layers TW Weeks Jr, MD Bremser, KS Ailey, E Carlson, WG Perry, RF Davis
Applied physics letters 67 (3), 401-403, 1995
309 1995 Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer RF Davis, OH Nam, T Zheleva, MD Bremser
US Patent 6,051,849, 2000
297 2000 Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates HS Kong, JT Glass, RF Davis
Journal of applied physics 64 (5), 2672-2679, 1988
297 1988 Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ...
Materials Science and Engineering: B 1 (1), 77-104, 1988
282 1988 Structural TEM study of nonpolar DN Zakharov, Z Liliental-Weber, B Wagner, ZJ Reitmeier, EA Preble, ...
Physical Review B—Condensed Matter and Materials Physics 71 (23), 235334, 2005
272 2005 Pendeoepitaxy of gallium nitride thin films K Linthicum, T Gehrke, D Thomson, E Carlson, P Rajagopal, T Smith, ...
Applied Physics Letters 75 (2), 196-198, 1999
262 1999 