| GaN metal-oxide-semiconductor high-electron-mobility transistor with atomic layer deposition Al2O3 as gate dielectric PD Ye, B Yang, KK Ng, J Bude, GD Wilk, S Halder, JCM Hwang Appl. Phys. Lett. 86 (6), 063501-063503, 2005 | 599 | 2005 |
| 2D materials advances: from large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications Z Lin, A McCreary, N Briggs, S Subramanian, K Zhang, Y Sun, X Li, ... 2D Materials 3 (4), 042001, 2016 | 551 | 2016 |
| Dimensional resonance of the two-dimensional electron gas in selectively doped GaAs/AlGaAs heterostructures SJ Allen, HL Stormer, JCM Hwang Phys. Rev. B 28 (8), 4875-4877, 1983 | 412 | 1983 |
| Fractional quantization of the Hall effect HL Stormer, A Chang, DC Tsui, JCM Hwang, AG Gossard, W Wiegmann Phys. Rev. Lett. 50 (24), 1953-1956, 1983 | 386 | 1983 |
| Black phosphorus and its isoelectronic materials F Xia, H Wang, JCM Hwang, AHC Neto, L Yang Nature Reviews Physics 1 (5), 306-317, 2019 | 286 | 2019 |
| Parabolic magnetoresistance from the interaction effect in a two-dimensional electron gas MA Paalanen, DC Tsui, JCM Hwang Phys. Rev. Lett. 51 (24), 2226-2229, 1983 | 218 | 1983 |
| Subband-Landau-level coupling in a two-dimensional electron gas Z Schlesinger, JCM Hwang, SJ Allen Phys. Rev. Lett. 50 (26), 2098-2101, 1983 | 160 | 1983 |
| Higher-order states in the multiple-series, fractional, quantum Hall effect AM Chang, P Berglund, DC Tsui, HL Stormer, JCM Hwang Phys. Rev. Lett. 53 (10), 997-1000, 1984 | 155 | 1984 |
| Modeling and characterization of dielectric-charging effects in RF MEMS capacitive switches X Yuan, JCM Hwang, D Forehand, CL Goldsmith IEEE MTT-S International Microwave Symposium Digest, 2005., 753-756, 2005 | 143 | 2005 |
| Initial observation and analysis of dielectric-charging effects on RF MEMS capacitive switches X Yuan, SV Cherepko, JCM Hwang, CL Goldsmith, C Nordquist, C Dyck IEEE MTT-S Int. Microwave Symp. (IMS) Dig., Fort Worth, TX, 1943-1946, 2004 | 125 | 2004 |
| Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction A Kastalsky, JCM Hwang Solid State Commun. 51 (5), 317-322, 1984 | 119 | 1984 |
| 0.8-V supply voltage deep-submicrometer inversion-mode In0.75Ga0.25As MOSFET YQ Wu, WK Wang, O Koybasi, DN Zakharov, EA Stach, S Nakahara, ... IEEE Electron Device Lett. 30 (7), 700-702, 2009 | 117* | 2009 |
| Cyclotron resonance in two dimensions Z Schlesinger, SJ Allen, JCM Hwang, PM Platzman, N Tzoar Phys. Rev. B 30 (1), 435-437, 1984 | 117 | 1984 |
| Measurement of grain-boundary diffusion at low temperatures by the surface accumulation method. I. Methods and analysis JCM Hwang, RW Balluffi J. Appl. Phys. 50 (3), 1349-1359, 1979 | 117 | 1979 |
| Activation energies and localization in the fractional quantum Hall effect GS Boebinger, HL Stormer, DC Tsui, AM Chang, JCM Hwang, AY Cho, ... Phys. Rev. B 36 (15), 7919-7929, 1987 | 113 | 1987 |
| Characterization of high-purity Si-doped molecular beam epitaxial GaAs BJ Skromme, SS Bose, B Lee, TS Low, ... J. Appl. Phys. 58 (12), 4685-4702, 1985 | 111 | 1985 |
| Direct extraction of equivalent circuit parameters for heterojunction bipolar transistors CJ Wei, JCM Hwang IEEE Transactions on Microwave Theory and Techniques 43 (9), 2035-2040, 1995 | 105 | 1995 |
| Electron-beam fabrication of GaAs low-noise MESFETs using a new tri-layer resist technique PC Chao, PM Smith, SC Palmateer, JCM Hwang IEEE Trans. Electron Devices 32 (6), 1042-1046, 1985 | 104 | 1985 |
| Acceleration of dielectric charging in RF MEMS capacitive switches X Yuan, Z Peng, JCM Hwang, D Forehand, CL Goldsmith IEEE Transactions on device and materials reliability 6 (4), 556-563, 2006 | 102 | 2006 |
| GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ... IEEE Electron Device Letters 41 (5), 689-692, 2020 | 101 | 2020 |
