LnCuO (S, Se, Te) monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film H Hosono, M Hirano, H Ota, M Orita, H Hiramatsu, K Ueda
US Patent 7,323,356, 2008
3780 2008 Iron-based layered superconductor: LaOFeP Y Kamihara, H Hiramatsu, M Hirano, R Kawamura, H Yanagi, T Kamiya, ...
Journal of the American Chemical Society 128 (31), 10012-10013, 2006
2021 2006 p-channel thin-film transistor using p-type oxide semiconductor, SnO Y Ogo, H Hiramatsu, K Nomura, H Yanagi, T Kamiya, M Hirano, H Hosono
Applied Physics Letters 93 (3), 2008
766 2008 Recent advances in iron-based superconductors toward applications H Hosono, A Yamamoto, H Hiramatsu, Y Ma
Materials today 21 (3), 278-302, 2018
442 2018 Nickel-based oxyphosphide superconductor with a layered crystal structure, LaNiOP T Watanabe, H Yanagi, T Kamiya, Y Kamihara, H Hiramatsu, M Hirano, ...
Inorganic Chemistry 46 (19), 7719-7721, 2007
390 2007 Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures M Orita, H Hiramatsu, H Ohta, M Hirano, H Hosono
Thin Solid Films 411 (1), 134-139, 2002
362 2002 Advantageous grain boundaries in iron pnictide superconductors T Katase, Y Ishimaru, A Tsukamoto, H Hiramatsu, T Kamiya, K Tanabe, ...
Nature Communications 2 (1), 409, 2011
319 2011 Crystal structures, optoelectronic properties, and electronic structures of layered oxychalcogenides M CuO Ch (M= Bi, La; Ch= S, Se, Te): effects of electronic configurations … H Hiramatsu, H Yanagi, T Kamiya, K Ueda, M Hirano, H Hosono
Chemistry of Materials 20 (1), 326-334, 2008
319 2008 Exploration of new superconductors and functional materials, and fabrication of superconducting tapes and wires of iron pnictides H Hosono, K Tanabe, E Takayama-Muromachi, H Kageyama, ...
Science and Technology of Advanced Materials 16 (3), 033503, 2015
283 2015 Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis Y Hinuma, T Hatakeyama, Y Kumagai, LA Burton, H Sato, Y Muraba, ...
Nature communications 7 (1), 11962, 2016
276 2016 Tin monoxide as an s‐orbital‐based p‐type oxide semiconductor: Electronic structures and TFT application Y Ogo, H Hiramatsu, K Nomura, H Yanagi, T Kamiya, M Kimura, M Hirano, ...
physica status solidi (a) 206 (9), 2187-2191, 2009
272 2009 Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor K Matsuzaki, H Hiramatsu, K Nomura, H Yanagi, T Kamiya, M Hirano, ...
Thin solid films 496 (1), 37-41, 2006
228 2006 Degenerate -type conductivity in wide-gap epitaxial films H Hiramatsu, K Ueda, H Ohta, M Hirano, T Kamiya, H Hosono
Applied Physics Letters 82 (7), 1048-1050, 2003
214 2003 Frontier of transparent oxide semiconductors H Ohta, K Nomura, H Hiramatsu, K Ueda, T Kamiya, M Hirano, H Hosono
Solid-State Electronics 47 (12), 2261-2267, 2003
195 2003 Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3 K Matsuzaki, H Yanagi, T Kamiya, H Hiramatsu, K Nomura, M Hirano, ...
Applied Physics Letters 88 (9), 2006
180 2006 Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates T Katase, H Hiramatsu, V Matias, C Sheehan, Y Ishimaru, T Kamiya, ...
Applied Physics Letters 98 (24), 2011
141 2011 Extraordinary strong band‐edge absorption in distorted chalcogenide perovskites Y Nishigaki, T Nagai, M Nishiwaki, T Aizawa, M Kozawa, K Hanzawa, ...
Solar Rrl 4 (5), 1900555, 2020
136 2020 Superconductivity in epitaxial thin films of Co-doped SrFe2As2 with bilayered FeAs structures and their magnetic anisotropy H Hiramatsu, T Katase, T Kamiya, M Hirano, H Hosono
Applied physics express 1 (10), 101702, 2008
135 2008 Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors Y Hanyu, K Domen, K Nomura, H Hiramatsu, H Kumomi, H Hosono, ...
Applied Physics Letters 103 (20), 2013
134 2013 Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS H Hiramatsu, K Ueda, H Ohta, M Orita, M Hirano, H Hosono
Applied physics letters 81 (4), 598-600, 2002
131 2002