| Growth and characterization of AlInN ternary alloys in whole composition range and fabrication of InN/AlInN multiple quantum wells by RF molecular beam epitaxy W Terashima, SB Che, Y Ishitani, A Yoshikawa Japanese journal of applied physics 45 (6L), L539, 2006 | 134 | 2006 |
| GaN-based terahertz quantum cascade lasers W Terashima, H Hirayama Terahertz Physics, Devices, and Systems IX: Advanced Applications in …, 2015 | 53 | 2015 |
| Spontaneous emission from GaN/AlGaN terahertz quantum cascade laser grown on GaN substrate W Terashima, H Hirayama physica status solidi c 8 (7‐8), 2302-2304, 2011 | 53 | 2011 |
| Design and fabrication of terahertz quantum cascade laser structure based on III‐nitride semiconductors W Terashima, H Hirayama physica status solidi c 6 (S2 2), S615-S618, 2009 | 42 | 2009 |
| Fine-structure N-polarity InN∕ InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy SB Che, W Terashima, Y Ishitani, A Yoshikawa, T Matsuda, H Ishii, ... Applied Physics Letters 86 (26), 2005 | 37 | 2005 |
| Bandgap energy of InN and its temperature dependence Y Ishitani, H Masuyama, W Terashima, M Yoshitani, N Hashimoto, ... physica status solidi (c) 2 (7), 2276-2280, 2005 | 36 | 2005 |
| Conduction and valence band edge properties of hexagonal InN characterized by optical measurements Y Ishitani, W Terashima, SB Che, A Yoshikawa physica status solidi c 3 (6), 1850-1853, 2006 | 29 | 2006 |
| The utility of droplet elimination by thermal annealing technique for fabrication of GaN/AlGaN terahertz quantum cascade structure by radio frequency molecular beam epitaxy W Terashima, H Hirayama Applied physics express 3 (12), 125501, 2010 | 24 | 2010 |
| Broadening mechanisms and self-consistent gain calculations for GaN quantum cascade laser structures K Wang, T Grange, TT Lin, L Wang, Z Jéhn, S Birner, J Yun, W Terashima, ... Applied Physics Letters 113 (6), 2018 | 23 | 2018 |
| Recent progress and future prospects of THz quantum-cascade lasers H Hirayama, W Terashima, TT Lin, M Sasaki Novel In-Plane Semiconductor Lasers XIV 9382, 157-167, 2015 | 19 | 2015 |
| Properties of the fundamental absorption edge of InN crystals investigated by optical reflection and transmission spectra Y Ishitani, K Xu, SB Che, H Masuyama, W Terashima, M Yoshitani, ... physica status solidi (b) 241 (12), 2849-2853, 2004 | 18 | 2004 |
| Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplet elimination by thermal annealing technique W Terashima, H Hirayama physica status solidi (a) 208 (5), 1187-1190, 2011 | 16 | 2011 |
| InN/GaN SQW and DH structures grown by radio frequency plasma‐assisted MBE SB Che, W Terashima, T Ohkubo, M Yoshitani, N Hashimoto, K Akasaka, ... physica status solidi (c) 2 (7), 2258-2262, 2005 | 13 | 2005 |
| Step‐Flow Growth of InN on N‐Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3 μm/h K Xu, W Terashima, T Hata, N Hashimoto, Y Ishitani, A Yoshikawa physica status solidi (c), 377-381, 2003 | 11 | 2003 |
| Comparative study of InN growth on Ga‐and N‐polarity GaN templates by molecular‐beam epitaxy K Xu, W Terashima, T Hata, N Hashimoto, M Yoshitani, B Cao, Y Ishitani, ... physica status solidi (c), 2814-2817, 2003 | 10 | 2003 |
| Terahertz frequency emission with novel quantum cascade laser designs W Terashima, H Hirayama Proc. SPIE 6958, 11-13, 2015 | 8 | 2015 |
| Recent progress toward realizing GaN-based THz quantum cascade laser H Hirayama, W Terashima Quantum Sensing and Nanophotonic Devices XI 8993, 86-94, 2014 | 8 | 2014 |
| Infrared measurements of InN films at low temperatures Y Ishitani, K Xu, W Terashima, N Hashimoto, M Yoshitani, T Hata, ... physica status solidi (c), 2838-2841, 2003 | 7 | 2003 |
| phys. stat. sol.(c) 0 K Xu, W Terashima, T Hata, N Hashimoto, Y Ishitani, A Yoshikawa | 7 | 2002 |
| Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD S Fujikawa, T Ishiguro, K Wang, W Terashima, H Fujishiro, H Hirayama Journal of Crystal Growth 510, 47-49, 2019 | 5 | 2019 |
