3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped2 O3 MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ...
IEEE Electron Device Letters 37 (7), 902-905, 2016
614 2016 Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 2016
397 2016 AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
333 2017 Si-and Sn-doped homoepitaxial β-Ga2O3 layers grown by MOVPE on (010)-oriented substrates M Baldini, M Albrecht, A Fiedler, K Irmscher, R Schewski, G Wagner
ECS Journal of Solid State Science and Technology 6 (2), Q3040, 2016
310 2016 Homoepitaxial growth of β‐Ga2 O3 layers by metal‐organic vapor phase epitaxy G Wagner, M Baldini, D Gogova, M Schmidbauer, R Schewski, M Albrecht, ...
physica status solidi (a) 211 (1), 27-33, 2014
245 2014 Recent progress in the growth of β-Ga2O3 for power electronics applications M Baldini, Z Galazka, G Wagner
Materials Science in Semiconductor Processing 78, 132-146, 2018
234 2018 Electrical compensation by Ga vacancies in Ga2O3 thin films E Korhonen, F Tuomisto, D Gogova, G Wagner, M Baldini, Z Galazka, ...
Applied Physics Letters 106 (24), 2015
201 2015 Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE D Gogova, G Wagner, M Baldini, M Schmidbauer, K Irmscher, R Schewski, ...
Journal of Crystal Growth 401, 665-669, 2014
184 2014 Semiconducting Sn-doped β-Ga2 O3 homoepitaxial layers grown by metal organic vapour-phase epitaxy M Baldini, M Albrecht, A Fiedler, K Irmscher, D Klimm, R Schewski, ...
Journal of Materials Science 51, 3650-3656, 2016
169 2016 Epitaxial stabilization of pseudomorphic α-Ga2O3 on sapphire (0001) R Schewski, G Wagner, M Baldini, D Gogova, Z Galazka, T Schulz, ...
Applied physics express 8 (1), 011101, 2014
144 2014 Evolution of planar defects during homoepitaxial growth of β-Ga2O3 layers on (100) substrates—A quantitative model R Schewski, M Baldini, K Irmscher, A Fiedler, T Markurt, B Neuschulz, ...
Journal of Applied Physics 120 (22), 2016
115 2016 Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy A Fiedler, R Schewski, M Baldini, Z Galazka, G Wagner, M Albrecht, ...
Journal of Applied Physics 122 (16), 2017
114 2017 Effect of indium as a surfactant in (Ga1− xInx) 2O3 epitaxial growth on β-Ga2O3 by metal organic vapour phase epitaxy M Baldini, M Albrecht, D Gogova, R Schewski, G Wagner
Semiconductor Science and Technology 30 (2), 024013, 2015
64 2015 Heteroepitaxy of Ga2(1‑x) In2x O3 layers by MOVPE with two different oxygen sources M Baldini, D Gogova, K Irmscher, M Schmidbauer, G Wagner, R Fornari
Crystal Research and Technology 49 (8), 552-557, 2014
50 2014 Metal complexes of retinoid derivatives with antiproliferative activity: synthesis, characterization and DNA interaction studies F Bisceglie, M Baldini, M Belicchi-Ferrari, E Buluggiu, M Careri, G Pelosi, ...
European journal of medicinal chemistry 42 (5), 627-634, 2007
50 2007 Characterization of epitaxial 4H-SiC for photon detectors F Dubecký, E Gombia, C Ferrari, B Zat'ko, G Vanko, M Baldini, J Kováč, ...
Journal of Instrumentation 7 (09), P09005, 2012
26 2012 Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy F Tuomisto, A Karjalainen, V Prozheeva, I Makkonen, G Wagner, ...
Oxide-based Materials and Devices X 10919, 23-30, 2019
20 2019 Unexpected current lowering by a low work-function metal contact: Mg/SI–GaAs F Dubecký, M Dubecký, P Hubík, D Kindl, E Gombia, M Baldini, V Nečas
Solid-state electronics 82, 72-76, 2013
19 2013 Co-evaporated YBCO/doped-CeO2/Ni–W coated conductors oxygen improved using a supersonic nozzle E Gilioli, M Baldini, M Bindi, F Bissoli, F Pattini, S Rampino, S Ginocchio, ...
Physica C: Superconductivity and its applications 463, 609-614, 2007
19 2007 Growth and characterization of buried GaSb p‐n junctions for photovoltaic applications M Baldini, C Ghezzi, A Parisini, L Tarricone, S Vantaggio, E Gombia, ...
Crystal Research and Technology 46 (8), 852-856, 2011
9 2011 
Robert SchewskiInstitut für Kristalzüchtung BerlinEmail verificata su ikz-berlin.de