| High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism P Harvey-Collard, B D’Anjou, M Rudolph, NT Jacobson, J Dominguez, ... Physical Review X 8 (2), 021046, 2018 | 143 | 2018 |
| A silicon metal-oxide-semiconductor electron spin-orbit qubit RM Jock, NT Jacobson, P Harvey-Collard, AM Mounce, V Srinivasa, ... Nature communications 9 (1), 1768, 2018 | 137 | 2018 |
| Coherent coupling between a quantum dot and a donor in silicon P Harvey-Collard, NT Jacobson, M Rudolph, J Dominguez, GA Ten Eyck, ... Nature Communications 8 (1), 1029, 2017 | 115* | 2017 |
| Coherent spin-spin coupling mediated by virtual microwave photons P Harvey-Collard, J Dijkema, G Zheng, A Sammak, G Scappucci, ... Physical Review X 12 (2), 021026, 2022 | 103 | 2022 |
| Valley splitting of single-electron Si MOS quantum dots JK Gamble, P Harvey-Collard, NT Jacobson, AD Baczewski, E Nielsen, ... Applied Physics Letters 109 (25), 2016 | 79 | 2016 |
| Spin-orbit interactions for singlet-triplet qubits in silicon P Harvey-Collard, NT Jacobson, C Bureau-Oxton, RM Jock, V Srinivasa, ... Physical Review Letters 122, 217702, 2019 | 64 | 2019 |
| A 6-to-8GHz 0.17 mW/qubit cryo-CMOS receiver for multiple spin qubit readout in 40nm CMOS technology B Prabowo, G Zheng, M Mehrpoo, B Patra, P Harvey-Collard, J Dijkema, ... 2021 IEEE International Solid-State Circuits Conference (ISSCC) 64, 212-214, 2021 | 56 | 2021 |
| On the relationship between snow grain morphology and in-situ near infrared calibrated reflectance photographs A Langlois, A Royer, B Montpetit, G Picard, L Brucker, L Arnaud, ... Cold Regions Science and Technology 61 (1), 34-42, 2010 | 52 | 2010 |
| On-Chip Microwave Filters for High-Impedance Resonators with Gate-Defined Quantum Dots P Harvey-Collard, G Zheng, J Dijkema, N Samkharadze, A Sammak, ... Physical Review Applied 14 (3), 034025, 2020 | 43 | 2020 |
| Single-shot readout performance of two heterojunction-bipolar-transistor amplification circuits at millikelvin temperatures MJ Curry, M Rudolph, TD England, AM Mounce, RM Jock, ... Scientific Reports 9 (1), 16976, 2019 | 30 | 2019 |
| Coupling MOS quantum dot and phosphorous donor qubit systems M Rudolph, P Harvey-Collard, R Jock, T Jacobson, J Wendt, T Pluym, ... Electron Devices Meeting (IEDM), 2016 IEEE International, 34.1. 1-34.1. 4, 2016 | 20 | 2016 |
| Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry P Harvey-Collard, A Jaouad, D Drouin, M Pioro-Ladrière Microelectronic Engineering 110 (Supplement C), 408-413, 2013 | 19 | 2013 |
| Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures L Massai, B Hetényi, M Mergenthaler, FJ Schupp, L Sommer, S Paredes, ... Communications Materials 5 (1), 151, 2024 | 17* | 2024 |
| All-electrical universal control of a double quantum dot qubit in silicon MOS P Harvey-Collard, RM Jock, NT Jacobson, AD Baczewski, AM Mounce, ... Electron Devices Meeting (IEDM), 2017 IEEE International, 36.5.1-36.5.4, 2017 | 17 | 2017 |
| Probing the Jaynes-Cummings ladder with spin circuit quantum electrodynamics T Bonsen, P Harvey-Collard, M Russ, J Dijkema, A Sammak, G Scappucci, ... Physical review letters 130 (13), 137001, 2023 | 15 | 2023 |
| Two-qubit logic between distant spins in silicon J Dijkema, X Xue, P Harvey-Collard, M Rimbach-Russ, SL de Snoo, ... arXiv preprint arXiv:2310.16805, 2023 | 11 | 2023 |
| Spin-orbit qubit using quantum dots RM Jock, M Rudolph, AD Baczewski, W Witzel, MS Carroll, ... US Patent 10,482,388, 2019 | 9 | 2019 |
| A silicon nanocrystal tunnel field effect transistor P Harvey-Collard, D Drouin, M Pioro-Ladriere Applied Physics Letters 104 (19), 2014 | 9 | 2014 |
| A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions D Drouin, G Droulers, M Labalette, B Lee Sang, P Harvey-Collard, ... Journal of Nanomaterials 2017 (1), 8613571, 2017 | 8 | 2017 |
| Spin Qubits in Silicon FinFET Devices A Fuhrer, M Aldeghi, T Berger, LC Camenzind, RS Eggli, S Geyer, ... 2022 International Electron Devices Meeting (IEDM), 14.1. 1-14.1. 4, 2022 | 3 | 2022 |
Malcolm CarrollInternational Business MachinesEmail verificata su ibm.com
