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Valeriy Sukharev
Valeriy Sukharev
Chief Scientist/Fellow, Siemens EDA
Email verificata su siemens.com - Home page
Titolo
Citata da
Citata da
Anno
Полупроводниковые сенсоры в физико-химических исследованиях
ИА Мясников, ВЯ Сухарев, ЛЮ Куприянов, СА Завьялов
Наука, 1991
2441991
Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage
V Sukharev, W Uesato, JR Hu, W Hsia, L Qian
US Patent 6,114,259, 2000
1542000
Microtrenching resulting from specular reflection during chlorine etching of silicon
RJ Hoekstra, MJ Kushner, V Sukharev, P Schoenborn
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
1441998
Physics-based electromigration assessment for power grid networks
X Huang, T Yu, V Sukharev, SXD Tan
Proceedings of the 51st Annual Design Automation Conference, 1-6, 2014
1412014
Composite semiconductor gate dielectrics
S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev
US Patent 6,087,229, 2000
1152000
A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of microstructure
V Sukharev, E Zschech, WD Nix
Journal of Applied Physics 102 (5), 2007
1112007
Poluprovodnikovye sensory v fiziko-khimicheskikh issledovaniyakh
IA Myasnikov, VY Sukharev, LY Kupriyanov, SA Zav'yalov
M.: Nauka, 327, 1991
110*1991
Power grid electromigration checking using physics-based models
S Chatterjee, V Sukharev, FN Najm
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2017
1052017
Semiconductor Sensors in Physico-Chemical Studies: Translated from Russian by V. Yu. Vetrov
LY Kupriyanov
Elsevier, 1996
1021996
A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength
V Sukharev, E Zschech
Journal of Applied Physics 96 (11), 6337-6343, 2004
1002004
Concerning the role of oxygen in photocatalytic decomposition of salicylic acid in water
V Sukharev, R Kershaw
Journal of Photochemistry and Photobiology A: Chemistry 98 (3), 165-169, 1996
971996
Multistep tungsten CVD process with amorphization step
VY Sukharev, DJ Heine
US Patent 5,804,249, 1998
921998
Physics-based electromigration models and full-chip assessment for power grid networks
X Huang, A Kteyan, SXD Tan, V Sukharev
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2016
832016
Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide
MR Mirabedini, V Sukharev
US Patent 7,138,292, 2006
782006
Beyond Black’s equation: Full-chip EM/SM assessment in 3D IC stack
V Sukharev
Microelectronic Engineering 120, 99-105, 2014
722014
Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same
S Aronowitz, V Sukharev, J Owyang, J Haywood
US Patent 5,837,598, 1998
701998
Analytical Modeling and Characterization of Electromigration Effects for Multi-Branch Interconnect Trees
HB Chen, S Tan, X Huang, T Kim, V Sukharev
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2016
672016
Method of forming variable thickness gate dielectrics
S Aronowitz, D Chan, J Kimball, D Lee, J Haywood, V Sukharev
US Patent 6,033,998, 2000
662000
Post-voiding stress evolution in confined metal lines
V Sukharev, A Kteyan, X Huang
IEEE Transactions on Device and Materials Reliability 16 (1), 50-60, 2016
602016
Analytical modeling of silicon etch process in high density plasma
S Abdollahi-Alibeik, JP McVittie, KC Saraswat, V Sukharev, P Schoenborn
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (5 …, 1999
591999
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