Gate-controlled quantum dots and superconductivity in planar germanium NW Hendrickx, DP Franke, A Sammak, M Kouwenhoven, D Sabbagh, ...
Nature communications 9 (1), 2835, 2018
169 2018 Shallow and undoped germanium quantum wells: a playground for spin and hybrid quantum technology A Sammak, D Sabbagh, NW Hendrickx, M Lodari, B Paquelet Wuetz, ...
Advanced Functional Materials 29 (14), 1807613, 2019
138 2019 Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process G Capellini, C Reich, S Guha, Y Yamamoto, M Lisker, M Virgilio, A Ghrib, ...
Optics express 22 (1), 399-410, 2014
124 2014 Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics J Frigerio, A Ballabio, G Isella, E Sakat, G Pellegrini, P Biagioni, M Bollani, ...
Physical Review B 94 (8), 085202, 2016
103 2016 Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers M Bonfanti, E Grilli, M Guzzi, M Virgilio, G Grosso, D Chrastina, G Isella, ...
Physical Review B—Condensed Matter and Materials Physics 78 (4), 041407, 2008
100 2008 Radiative recombination and optical gain spectra in biaxially strained M Virgilio, CL Manganelli, G Grosso, G Pizzi, G Capellini
Physical Review B—Condensed Matter and Materials Physics 87 (23), 235313, 2013
95 2013 Type-I alignment and direct fundamental gap in SiGe based heterostructures M Virgilio, G Grosso
Journal of Physics: Condensed Matter 18 (3), 1021, 2006
91 2006 The thermal stability of epitaxial GeSn layers P Zaumseil, Y Hou, MA Schubert, N Von Den Driesch, D Stange, ...
APL Materials 6 (7), 2018
80 2018 Compression and diffusion: a joint approach to detect complexity P Allegrini, V Benci, P Grigolini, P Hamilton, M Ignaccolo, G Menconi, ...
Chaos, Solitons & Fractals 15 (3), 517-535, 2003
77 2003 Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions T Grange, D Stark, G Scalari, J Faist, L Persichetti, L Di Gaspare, ...
Applied Physics Letters 114 (11), 2019
69 2019 Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells G Pizzi, M Virgilio, G Grosso
Nanotechnology 21 (5), 055202, 2009
60 2009 Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment M Virgilio, M Bonfanti, D Chrastina, A Neels, G Isella, E Grilli, M Guzzi, ...
Physical Review B—Condensed Matter and Materials Physics 79 (7), 075323, 2009
56 2009 Near-and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells Y Busby, M De Seta, G Capellini, F Evangelisti, M Ortolani, M Virgilio, ...
Physical Review B—Condensed Matter and Materials Physics 82 (20), 205317, 2010
51 2010 Dynamical systems and computable information V Benci, C Bonanno, S Galatolo, G Menconi, M Virgilio
arXiv preprint cond-mat/0210654, 2002
45 2002 Quantum-confined Stark effect in M Virgilio, G Grosso
Physical Review B—Condensed Matter and Materials Physics 77 (16), 165315, 2008
44 2008 Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interfacial roughness scattering T Grange, S Mukherjee, G Capellini, M Montanari, L Persichetti, ...
Physical Review Applied 13 (4), 044062, 2020
40 2020 Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers M Virgilio, CL Manganelli, G Grosso, T Schroeder, G Capellini
Journal of Applied Physics 114 (24), 2013
39 2013 Conduction band intersubband transitions in Ge/SiGe quantum wells M De Seta, G Capellini, Y Busby, F Evangelisti, M Ortolani, M Virgilio, ...
Applied Physics Letters 95 (5), 2009
38 2009 Control of Electron-State Coupling in Asymmetric C Ciano, M Virgilio, M Montanari, L Persichetti, L Di Gaspare, M Ortolani, ...
Physical Review Applied 11 (1), 014003, 2019
34 2019 Physical mechanisms of intersubband-absorption linewidth broadening in M Virgilio, D Sabbagh, M Ortolani, L Di Gaspare, G Capellini, M De Seta
Physical Review B 90 (15), 155420, 2014
34 2014 
Giovanni CapelliniFull Professor, Università Roma Tre and IHP Leibniz Institute for High Performance MicroelectronicsEmail verificata su uniroma3.it
